Parameter Extraction from the Reverse I-V and C-V Characteristics of an Epitaxial p-InP/Au Schottky Diode

1993 ◽  
Vol 318 ◽  
Author(s):  
A. Singh ◽  
P. Cova ◽  
R. A. Masut
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Parameter Extraction ◽  
Interface Layer ◽  
Least Square ◽  
Reverse Bias Voltage ◽  
Zero Bias ◽  
Current Voltage

ABSTRACTEpitaxial p-InP/Au Schottky diodes were fabricated by evaporation of Au onto Zn doped epitaxial layers of InP grown by MOVPE, on a highly doped InP substrate. The reverse current-voltage (Ir-Vr) and 1 MHz capacitance-voltage (C-V) characteristics of the Au/p-InP diodes were measured in the temperature range 220-393 K. At all temperatures, soft reverse current-voltage characteristics were observed, which may be due to the decrease in the effective Schottky barrier height (øbr) with the increase of Vr. The voltage dependence of the reverse current was well described in terms of the interface layer thermionic emission (ITE) model which incorporates the effects of applied reverse voltage drop and the transmission coefficient across the interface layer and image force lowering of the barrier height into the thermionic emission theory. A self consistent iteration and least square fitting technique was used to obtain the zero bias barrier height (øbo) and interface layer capacitance (Ci) from the Ir-Vr data. Both, the Ir-Vr and the C-V data were analyzed under the assumption of reverse bias voltage independence of the charge trapped in the interface states, which was supported by our experimental data. The values of øbo obtained from the C-V measurements agreed well with those obtained from the Ir-Vr data for a value of 0.45 AK−2cm−2 for the effective Richardson constant (Aeff).

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

scholarly journals On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Abbas Sabahi Namini ◽  
Mehdi Shahedi Asl ◽  
Gholamreza Pirgholi-Givi ◽  
Seyed Ali Delbari ◽  
Javid Farazin ◽  
...  
Keyword(s):  
Series Resistance ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Current Voltage ◽  
Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

1995 ◽  
Vol 379 ◽  
Author(s):  
L. He ◽  
E. Li ◽  
Z.Q. Shi ◽  
R.L. Jiang ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Room Temperature ◽  
Conduction Mechanism ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Nitrogen Atmosphere ◽  
Thin Layers ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Cryogenic Processing

ABSTRACTSchottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

scholarly journals Schottky diodes based on 4H-SiC epitaxial layers

2021 ◽  
Vol 2103 (1) ◽  
pp. 012235
Author(s):  
A M Strel’chuk ◽  
E V Kalinina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Alternative Explanation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Epitaxial Layers ◽  
Barrier Heights ◽  
Current Voltage ◽  
Significant Spread

Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

2013 ◽  
Vol 858 ◽  
pp. 171-176
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Carrier Transport ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

scholarly journals I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
M. Erkovan ◽  
E. Şentürk ◽  
Y. Şahin ◽  
M. Okutan
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Native Oxide ◽  
Analysis Technique ◽  
Current Voltage ◽  
P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

scholarly journals A Study of a-Sic/C-Si(n) Isotype Heterojunctions

1993 ◽  
Vol 16 (1) ◽  
pp. 55-64 ◽  
Author(s):  
N. Georgoulas ◽  
L. Magafas ◽  
A. Thanailakis
Keyword(s):  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Diffusion Mechanism ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Drift Diffusion ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1= 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared

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