scholarly journals I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
M. Erkovan ◽  
E. Şentürk ◽  
Y. Şahin ◽  
M. Okutan
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Native Oxide ◽  
Analysis Technique ◽  
Current Voltage ◽  
P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Electrical Characteristics of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering

2013 ◽  
Vol 446-447 ◽  
pp. 88-92
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Ryūhei Iwasaki ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Straight Line ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by FTDCS. In order to estimate their diode parameters such as ideality factor, barrier height and series resistance, their current-voltage characteristics were measured in the temperature range from 300 to 77 K and analyzed on the basis of thermionic emission theory and Cheungs method. Based on thermionic emission theory, the ideality factor was calculated from the slope of the linear part from the forward lnJ-V characteristics. The barrier height was calculated once the saturation current density was derived from the straight line intercept of lnJ-V plot at a zero voltage. The obtained results exhibit an increase of ideality factor and a decrease of barrier height at low temperatures, which might be owing to inhomogeneity of material and non-uniformity of charge at the interface. Based on Cheungs method, the ideality factor and barrier height were estimated from y-axis intercept of dV/d (lnJ)J plot and y-axis intercept of H(J)J plot, respectively. The series resistance was analyzed from the slopes of dV/d (lnJ)J and H(J)J plots. The values of ideality factor and barrier height obtained from this method are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)J and H(J)J plots, which were approximately equal to each others, were increased as the temperature decreased. This result should be owing to the increased ideality factor and remarkably reduced carrier concentrations at low temperatures.

THE EFFECT OF NANO AND MICRO POROSITY ON THE SCHOTTKY BARRIER HEIGHT AND IDEALITY FACTOR IN THE I–V CHARACTERISTICS OF PtSi/p-Si IR DETECTOR

2009 ◽  
Vol 23 (05) ◽  
pp. 765-771
Author(s):  
H. ESHGHI ◽  
M. MOHAMMADI
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Thermionic Emission ◽  
Ir Detector ◽  
Current Voltage ◽  
Two Samples ◽  
P Type ◽  
Silicon Interface

In this paper, the effect of porosity on reverse bias current–voltage characteristics of PtSi/por - Si (p-type) IR detector as a function of temperature is investigated. Our experimental data for two samples with different porosities (50% and 10%) at 300 K and 77 K are reported by Raissi et al.1 These data indicates a breakdown-like behavior. Our analytical model is based on hole thermionic emission with large ideality factor (n ≈ 200). Our calculations show that at each temperature, the Schottky barrier height, as well as the ideality factor, in sample with 10% porosity is bigger than that of 50%. These variations could be due to band gap variations of Si size effect using quantum dot model, and the presence of the relatively high (~1015 cm-2 eV-1) density of states at the silicide/por-silicon interface, respectively.

Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

2015 ◽  
Vol 1103 ◽  
pp. 91-96
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Ryūhei Iwasaki ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Lift Off ◽  
P Type ◽  
Photolithography Process

Mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunctions were successfully fabricated by a lift-off technique combined with a photolithography process. Their current-voltage characteristics were measured at low temperatures range from 300 K down to 60 K. We estimated their diode parameters such as ideality factor, barrier height and series resistance based on the thermionic emission theory and Cheung’s method. From the estimation by the thermionic emission theory, the obtained results show an increase of ideality factor and a decrease of barrier height at low temperatures. The estimation by Cheung’s method shows that the values of ideality factor and barrier height are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)-J and H(J)-J plots, which are approximately equal to each others, are increased at low temperatures.

Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

2013 ◽  
Vol 858 ◽  
pp. 171-176
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Carrier Transport ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

2011 ◽  
Vol 66 (8-9) ◽  
pp. 576-580 ◽  
Author(s):  
Nazim Ucar ◽  
Ahmet Faruk Özdemira ◽  
Durmus Ali Aldemira ◽  
Güven Çankayab
Keyword(s):  
Hydrostatic Pressure ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Pressure Coefficient ◽  
Characteristic Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The effect of time on the characteristic parameters of Pb/p-Si Schottky diodes has been presented as a function of hydrostatic pressure. Current-voltage curves of the Pb=p-Si Schottky diodes have been measured at immediate, 15, 30, 60, and 120 min intervals under 1, 2, and 4 kbar hydrostatic pressure. It has been found that the values of the ideality factor have been approximately unchanged with increasing time. On the other hand, the barrier height of the Pb=p-Si structure slowly increase with increasing time, while these parameters also change with hydrostatic pressure. The diode shows nonideal current-voltage behaviour with an ideality factor greater than unity that can be ascribed to the interfacial layer and the interface states. In addition, the Schottky barrier height increases with a linear pressure coefficient of 92 meV=kbar, which is higher than the pressure coefficient of the silicon fundamental band gap.

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