Rapid Evaluation of Thin Film Interfacial Reactions Using Temperature-Ramped Measurements

1993 ◽  
Vol 318 ◽  
Author(s):  
J.M.E. Harper ◽  
L.A. Clevenger ◽  
E.G. Colgan ◽  
C. Cabral ◽  
B. Arcot
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Interfacial Reactions ◽  
Rapid Evaluation ◽  
Cu Alloys ◽  
Thermal Measurements ◽  
Cu Dissolution ◽  
Interfacial Oxygen

ABSTRACTWe describe an approach for rapid evaluation of thin film interfacial reactions using a combination of temperature-ramped in situ measurements of sheet resistance, calorimetry and stress. Electrical, mechanical and thermal measurements at elevated temperatures provide detailed reaction information which is unavailable in room temperature measurements. Kinetic data is particularly useful in making comparisons with mechanistic models. The following examples are discussed:1. Effects of interfacial oxygen on Ta as a diffusion barrier between Cu and Si,2. Effects of interfacial oxygen on the Cu/Mg reaction to form CuMg2 and Cu2Mg,3. Effects of the density of internal interfaces (grain boundaries) on Al2Cu dissolution and precipitation in Al-Cu alloys.

scholarly journals Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Arthur Leis ◽  
Michael Schleenvoigt ◽  
Abdur Rehman Jalil ◽  
Vasily Cherepanov ◽  
Gregor Mussler ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
In Situ Measurement

scholarly journals ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

2014 ◽  
Vol 54 (5) ◽  
pp. 341-347
Author(s):  
Peter Pikna ◽  
Vlastimil Píč ◽  
Vítězslav Benda ◽  
Antonín Fejfar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Water Vapour ◽  
Elevated Temperatures ◽  
Voltage Response ◽  
In Situ Observation ◽  
Polycrystalline Thin Film ◽  
Cell Parameters

Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ). Tested temperature of the sample (55°C – 110°C) was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

In-situ Measurement of GaAs Optical Constants and Surface Quality, as Functions of Temperature

1991 ◽  
Vol 222 ◽  
Author(s):  
Huade Yao ◽  
Paul G. Snyder
Keyword(s):  
Room Temperature ◽  
Optical Constants ◽  
Molecular Beam ◽  
Elevated Temperatures ◽  
Native Oxide ◽  
Time Data ◽  
Gaas Sample ◽  
Optical Thermometer ◽  
Surface Changes

ABSTRACTIn-situ spectroscopic ellipsometry (SE) was applied to monitor GaAs (100) surface changes induced at elevated temperatures inside an ultrahigh vacuum (UHV) chamber (<1×10−9 torr base pressure, without As overpressure). The real time data showed clearly the evolution of the native-oxide desorption at ∼577°C, on a molecular-beam-epitaxy (MBE)-grown GaAs (100) surface. In addition, surface degradation was found before and after the oxide desorption. A clean and smooth surface was obtained from an arsenic-capped, MBE-grown GaAs sample, after the arsenic coating was evaporated at ∼350 °C inside the UHV. Pseudodielectric functions <ε>GaAs, from 1.6 eV to 4.5 eV, were obtained through the SE measurements, from this oxide-free surface, at temperatures ranging from room temperature (RT) to ∼610 °C. These <ε> data were used as reference data to develop an algorithm for determining surface temperatures from in-situ SE measurements, thus turning the SE instrument into a sensitive optical thermometer.

scholarly journals Thin, Flexible Supercapacitors Made from Carbon Nanofiber Electrodes Decorated at Room Temperature with Manganese Oxide Nanosheets

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. K. Nataraj ◽  
Q. Song ◽  
S. A. Al-Muhtaseb ◽  
S. E. Dutton ◽  
Q. Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrochemical Performance ◽  
Specific Capacitance ◽  
Carbon Nanofibers ◽  
Room Temperature ◽  
Composite Electrode ◽  
Carbon Nanofiber ◽  
Two Dimensional ◽  
Nanostructured Composite

We report the fabrication and electrochemical performance of a flexible thin film supercapacitor with a novel nanostructured composite electrode. The electrode was prepared byin situcoprecipitation of two-dimensional (2D) MnO2nanosheets at room temperature in the presence of carbon nanofibers (CNFs). The highest specific capacitance of 142 F/g was achieved for CNFs-MnO2electrodes in sandwiched assembly with PVA-H4SiW12O40·nH2O polyelectrolyte separator.

Oxide Scale Formation on Iron-Chromium Alloys in Elevated Temperature Air Environments

CORROSION ◽  
1981 ◽  
Vol 37 (12) ◽  
pp. 700-711 ◽  
Author(s):  
P. Fabis ◽  
R. Heidersbach ◽  
C. Brown ◽  
T. Rockett
Keyword(s):  
Raman Spectroscopy ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Experimental Program ◽  
Oxide Scales ◽  
Chromium Alloys ◽  
Spectroscopy Instrumentation ◽  
Commercial Iron ◽  
Iron Chromium

Abstract Oxide scales formed on metals at elevated temperatures may be different, both chemically and structurally, from the scales on the metal once it has cooled to room temperature. This paper discusses Raman spectroscopy instrumentation for the in-situ identification of scales formed on metal surfaces exposed to gaseous environments. The results of an experimental program to characterize scales formed on two commercial iron-chromium alloys, AISI 446 and 502, in air and oxygen environments are also presented.

TEM study of the T2 phase in Al-Li-Cu alloys at elevated temperatures

1988 ◽  
Vol 46 ◽  
pp. 762-763
Author(s):  
J. R. Reed ◽  
D. J. Michel
Keyword(s):  
Elevated Temperatures ◽  
Thermal Response ◽  
Stable Phase ◽  
Cu Alloy ◽  
Cu Alloys ◽  
Icosahedral Phases ◽  
Transmission Electron ◽  
Transmission Electron Microscope Study ◽  
Electron Study

The discovery of an alloy phase exhibiting five-fold symmetry in rapidly quenched Al-Mn alloys has led to reports of similar phases in other alloys systems. Other studies have suggested that the T2 phase in Al-Li-Cu alloys exhibits five-fold symmetry and forms as a stable phase by solidification directly from the bulk alloy. Although considerable effort has been expended to investigate the icosahedral phases, including the T2 phase in the Al-Li-Cu system, the thermal stability of this phase remains unknown. The purpose of this paper is to report results from an investigation of the thermal response of the T2 phase in Al-Li-Cu alloys during an in-situ elevated temperature transmission electron microscope study.The 3-mm diameter specimens used for the transmission electron study were prepared from a specially melted Al-2.5 Li-2.5 Cu alloy produced by conventional procedures. The TEM disc specimens were solutioned 1 h at 550°C and aged 50 h at 190°C in air to develop the microstructure.

Electron microscope studies of climb of dissociated dislocations

1978 ◽  
Vol 36 (1) ◽  
pp. 324-325
Author(s):  
C.B. Carter ◽  
D. Cherns ◽  
P.B. Hirsch ◽  
H. Saka
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Point Defects ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Al Alloys ◽  
Weak Beam ◽  
High Supersaturation ◽  
Beam Technique

The mechanism of climb of dissociated dislocations in f.c.c. metals and alloys is not well understood. Climb of dislocations by absorption or emission of vacancies at existing jogs in dissociated dislocations has been observed using the “weak-beam” technique of electron microscopy, but the mechanism of nucleation of jogs is not clear. In this paper we report some results of experiments designed to study the nucleation problem, and more generally the mechanism of absorption of point defects under conditions of high supersaturation.Thin (111) sections of deformed single crystals of Cu-Al alloys, of various compositions, have been electron irradiated in an AEI EM7 HVEM up to 1 MeV, either at room temperature, or elevated temperatures up to 200°C, using a goniometer heating stage. Observations under weak beam conditions have been made a) in situ in the HVEM b) at 100kV in an JEM100B, following irradiation in the HVEM. Interstitials produced by the irradiation are expected to be preferentially attracted to the dislocations because of the strong dislocation-interstitial interaction.

Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si

1987 ◽  
Vol 102 ◽  
Author(s):  
G. J. Fisanick ◽  
H.-J. Gossmann ◽  
P. Kuo
Keyword(s):  
Surface Diffusion ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Size Distributions ◽  
Beam Irradiation ◽  
Island Size ◽  
Uniform Growth ◽  
Extensive Surface

ABSTRACTIslanding and surface diffusion for Ge on Si(111)7×7 and Si(100)2×1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities. At room-temperature uniform growth is observed, while elevated temperatures lead to Stranski-Krastanov growth with complex island size distributions. Extensive surface diffusion is observed on Si(100)2×l; however, surface diffusion is demonstrated to be extremely sensitive to contamination with carbon on the order of ≈0.05 ML, as well as to e-beam irradiation.

Preparation of Pb-Based Ferroelectric thin films by Ion- and Photo-Assisted Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
Shigenori Hayashi ◽  
Kenji Iijima ◽  
Takashi Hirao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Preparation Process ◽  
Pzt Thin Films ◽  
In Situ Preparation ◽  
Evaporation Technique ◽  
Film Preparation ◽  
Deposition Techniques

AbstractThin film process for Pb-based perovskite ferroelectrics has been investigated. Synthesis of epitaxial PLZT, PLT and PZT thin films by rfmagnetron sputtering in our laboratory was reviewed. Basic thin film process and applications were discussed. For further investigation, film preparation process was developed by co-deposition and assisted deposition techniques. The substrate temperature required for in-situ preparation of perovskite could be reduced to room temperature by an ion- and photoassisted co-evaporation technique.

Substantiation of a Technique of Determining Stress in Thin Films at Very Low Temperatures

2015 ◽  
Vol 14 ◽  
pp. 28-36
Author(s):  
C.C. Chama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperatures ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
High Temperature Stress ◽  
Hysteresis Curves ◽  
Stress Hysteresis

Substantiation of a technique earlier employed in determining stress in Copper-Silver thin films at very low temperatures is presented. It is shown that the stress measured at elevated temperatures using Stoney’s equation can be utilized in the determination of stress at very low temperatures. To demonstrate the application of this technique, a case study has been conducted by utilizing stress hysteresis curves obtained from the Cu-6at%Ag thin film heated from room temperature to 400°C and cooled back to room temperature in two cycles. The stresses in the Cu-6at%Ag thin film at various low temperatures up to-197°C have been determined by utilizing data from high temperature stress hysteresis curves.

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