Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

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Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

MRS Proceedings ◽

10.1557/proc-316-741 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 3

Author(s):

J. Teichert ◽

L. Bischoff ◽

E Hesse ◽

D. Panknin ◽

W. Skorupa

Keyword(s):

Ion Implantation ◽

Substrate Temperature ◽

Liquid Alloy ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Dose Dependence ◽

Ion Sources ◽

Cobalt Ions ◽

Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt suicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

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Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591067 ◽

1999 ◽

Vol 17 (6) ◽

pp. 2791 ◽

Cited By ~ 14

Author(s):

L. C. Chao ◽

B. K. Lee ◽

C. J. Chi ◽

J. Cheng ◽

I. Chyr ◽

...

Keyword(s):

Rare Earth ◽

Liquid Alloy ◽

Focused Ion Beam ◽

Ion Beam ◽

Ion Sources ◽

Ion Beam Implantation

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Dose Rate and Temperature Dependence of Ion-Beam-Induced Defect Evolution in Si and SiC

MRS Proceedings ◽

10.1557/proc-719-f11.2 ◽

2002 ◽

Vol 719 ◽

Author(s):

M. Posselt ◽

L. Bischoff ◽

J. Teichert ◽

A. Ster

Keyword(s):

Dose Rate ◽

Time Scale ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Dose Dependence ◽

Defect Reduction ◽

Dose Rates ◽

Beam System ◽

Defect Relaxation

AbstractA focused ion beam system is applied to investigate the dose dependence of the shape of Ge channeling implantation profiles in Si and SiC at two very different dose rates (1011 and 1018 cm-2 s-1), and for implantation temperatures between room temperature and 580 °C. The competing influence of dose rate and temperature observed is explained in terms of intracascade defect relaxation. For the different implantation temperatures, the time scale for defect reduction is estimated. The results obtained for Si are compared with those for SiC.

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Nanocomposite Polyurethane Foams Via POSS Blends

MRS Proceedings ◽

10.1557/proc-733-t1.6 ◽

2002 ◽

Vol 733 ◽

Author(s):

Brock McCabe ◽

Steven Nutt ◽

Brent Viers ◽

Tim Haddad

Keyword(s):

High Temperature ◽

Sample Preparation ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Polyurethane Foams ◽

Development Projects ◽

Polymer Systems ◽

Polyurethane Resin ◽

Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

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Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.922.264 ◽

2014 ◽

Vol 922 ◽

pp. 264-269 ◽

Cited By ~ 7

Author(s):

Masahiro Inomoto ◽

Norihiko L. Okamoto ◽

Haruyuki Inui

Keyword(s):

Single Crystal ◽

Deformation Behavior ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Intermetallic Phase ◽

Gamma Phase ◽

Compression Tests ◽

Slip Direction ◽

Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

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A mass-separating focused-ion-beam system for maskless ion implantation

Vacuum ◽

10.1016/0042-207x(83)90764-9 ◽

1983 ◽

Vol 33 (7) ◽

pp. 423

Keyword(s):

Ion Implantation ◽

Focused Ion Beam ◽

Ion Beam ◽

Beam System

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AFM Study of Surface Morphology of Aluminum Nitride Thin Films

MRS Proceedings ◽

10.1557/proc-388-399 ◽

1995 ◽

Vol 388 ◽

Cited By ~ 4

Author(s):

Yoshihisa Watanabe ◽

Yoshikazu Nakamura ◽

Shigekazu Hirayama ◽

Yuusaku Naota

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Substrate Temperature ◽

Single Crystal ◽

Room Temperature ◽

Ion Beam ◽

Soda Lime ◽

Silicon Single Crystal ◽

Soda Lime Glass ◽

Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

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