Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films

1996 ◽  
Vol 11 (4) ◽  
pp. 904-911 ◽  
Author(s):  
Herbert L. Ho ◽  
Charles L. Bauer ◽  
Subhash Mahajan ◽  
David E. Laughlin ◽  
Arthur G. Milnes
Keyword(s):  
Metastable Phase ◽  
Microstructural Characterization ◽  
Type A ◽  
Transformation Process ◽  
Nickel Silicide ◽  
Type B ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Xrd Techniques

The formation processes of epitaxial nickel silicides, resulting from the interaction of nickel silicide films (10 nm–100 nm) on (111) silicon (Si) substrates after furnace annealing, have been studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) techniques. The formation of type-A epitaxial grains (i.e., grown with the same orientation of the underlying Si substrate) and type-B epitaxial grains (i.e., rotated by 180± around the surface normal) in “thick” epitaxial films (i.e., greater than 35 nm) is proposed to be linked to the formation of a fluorite-based CuPt (L11)-like NiSi phase. This phase is found to be a metastable phase and is believed to be a transitional phase toward the formation of the equilibrium NiSi2 phase in both type-A and type-B orientations. In addition, we have found that a fluorite-based CuPt-like NiSi may even coexist with a fluorite-based CuAu I-like structure. The interrelationship between these two structures is discussed in the context of a displacive transformation process in fcc structures as originally proposed by Hansson and Barnes [Acta Metall. 12, 315 (1964)] and Pashley et al. [Philos. Mag. 19, 83 (1969)].

Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon

1993 ◽  
Vol 320 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

The Effect of Ag-Addition on Precipitation Sequence in Al-1.0mass%Mg2Si-Excess 0.4mass%Si Alloy

2007 ◽  
Vol 561-565 ◽  
pp. 239-242 ◽  
Author(s):  
Kenji Niwa ◽  
Kenji Matsuda ◽  
Junya Nakamura ◽  
Tatsuo Sato ◽  
Susumu Ikeno
Keyword(s):  
Metastable Phase ◽  
Type A ◽  
Precipitation Sequence ◽  
Type B ◽  
X Ray ◽  
Β Phase ◽  
Transmission Electron ◽  
Alloy Type ◽  
Type C ◽  
Study Type

It is well known that Ag additional Al-1.0mass%Mg2Si-excess0.4mass%Si alloy (ex. Si-Ag alloy) has higher hardness and elongation than those of Al-1.0mass%Mg2Si-excess 0.4mass%Si alloy (ex. Si alloy). However, precipitation sequence of ex. Si-Ag alloy is not clear yet. In this work, precipitation sequence of ex. Si-Ag alloy has been investigated using high resolution transmission electron microscopy and X-ray energy dispersive spectroscopy. Precipitates were classified into several kinds by HRTEM images and SAED patterns, and relative frequencies of precipitates were also investigated. Its precipitation sequence was compared with that of ex. Si alloy. Type-A, Type-B and Type-C precipitates as special metastable phase in excess Si type Al-Mg-Si alloy, has been observed in ex. Si-Ag alloy, but β’ phase increased and Type-A and Type-B precipitate decreased in this study. Type-A precipitate was found at only grain boundary.

Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Devitrification products of rapidly solidified Ni-Nb amorphous alloys.

1990 ◽  
Vol 48 (4) ◽  
pp. 950-951
Author(s):  
G. A. Bertero ◽  
W.H. Hofmeister ◽  
N.D. Evans ◽  
J.E. Wittig ◽  
R.J. Bayuzick
Keyword(s):  
Electron Microscopy ◽  
Amorphous Structure ◽  
Sulphuric Acid Solution ◽  
X Ray Diffraction ◽  
High Fracture ◽  
Transmission Electron ◽  
Xrd Techniques ◽  
Rapidly Solidified ◽  
Electromagnetically Levitated

Rapid solidification of Ni-Nb alloys promotes the formation of amorphous structure. Preliminary results indicate promising elastic properties and high fracture strength for the metallic glass. Knowledge of the thermal stability of the amorphus alloy and the changes in properties with temperature is therefore of prime importance. In this work rapidly solidified Ni-Nb alloys were analyzed with transmission electron microscopy (TEM) during in-situ heating experiments and after isothermal annealing of bulk samples. Differential thermal analysis (DTA), scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques were also used to characterize both the solidification and devitrification sequences.Samples of Ni-44 at.% Nb were electromagnetically levitated, melted, and rapidly solidified by splatquenching between two copper chill plates. The resulting samples were 100 to 200 μm thick discs of 2 to 3 cm diameter. TEM specimens were either ion-milled or alternatively electropolished in a methanol-10% sulphuric acid solution at 20 V and −40°C.

One Step Synthesis and Characterization of Zirconia-Graphene Composites

2012 ◽  
Vol 600 ◽  
pp. 174-177 ◽  
Author(s):  
Jian Fei Xia ◽  
Zong Hua Wang ◽  
Yan Zhi Xia ◽  
Fei Fei Zhang ◽  
Fu Qiang Zhu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Composite ◽  
Transmission Electron ◽  
One Step ◽  
Ft Ir ◽  
Xrd Techniques

Zirconia-graphene composite (ZrO2-G) has been successfully synthesized via decomposition of ZrOCl2•6H2O in a water-isopropanol system with dispersed graphene oxide (GO) utilizing Na2S as a precursor could enable the occurrence of the deposition of Zr4+ and the deoxygenation of GO at the same time. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) techniques were used to characterize the samples. It was found that graphene were fully coated with ZrO2, and the ZrO2 existing in tetragonal phase, which resulted in the formation of two-dimensional composite.

Microstructural Characterization of Pt/Ti and RuO2 Electrodes on SiO2/Si Annealed in the Oxygen Ambient

1996 ◽  
Vol 433 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun JA Kwon ◽  
Young Woo Jeong ◽  
Hyun HA Kim ◽  
Kyu HO Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Film Surface ◽  
Microstructural Characterization ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Degree Of Oxidation ◽  
Thin Interlayer ◽  
Increasing Temperature

AbstractMicrostructures and interdiffusions of Pt/Ti/SiO2/Si and RuO2/SiO2/Si during annealing in O2 were investigated using x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The degree of oxidation and the interdiffusion of elements have remarkably increased with increasing temperature above 500 °C for the Pt/Ti/SiO2/Si case. The generation of Pt hillocks commenced at 500 °C. The Pt-silicide phase was also observed near the TiOx/SiO2 interface. The microstructural variations occurred to only a small amount for the RuO2/SiO2/Si case over the temperature range 300 – 700 °C. While there was no hillock formation, the RuO2 film surface was roughened by the thermal grooving phenomenon. A thin interlayer phase was found at the RuO2/SiO2 interface.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Crystallization of nanostructured cobalt hydroxide carbonate at ambient conditions: a key precursor of Co3O4

2016 ◽  
Vol 80 (6) ◽  
pp. 995-1011 ◽  
Author(s):  
J. González-López ◽  
Á. Fernández-González ◽  
A. Jiménez
Keyword(s):  
Transformation Process ◽  
Cobalt Hydroxide ◽  
Small Range ◽  
Ambient Conditions ◽  
X Ray Diffraction ◽  
Lamellar Crystal ◽  
X Ray ◽  
Platelet Morphology ◽  
Transmission Electron ◽  
Material Sciences

AbstractCrystals of Co2CO3(OH)2have been synthesized under ambient conditions, in contrast to hydrothermal methods reported previously. We have developed a simple but efficient methodology to obtain an initial amorphous phase that evolves to a crystalline cobalt hydroxide carbonate after one week of maturation. X-ray diffraction analysis indicates that this phase crystallizes in the space groupP21/a(a= 12.886(6),b= 9.346(3),c= 3.156(1) Å, β = 110.358(6)°). The platelet morphology of Co2CO3(OH)2agrees with its lamellar crystal structure. High-resolution transmission electron microscopy (HRTEM) reveals that each individual platelet is comprised of nanodomains disoriented with respect to their neighbours. The kinetics and the activation energy (Ea= 6.26 kJ mol–1) of the transformation process have been estimated using the rate constant method. The precipitation of solids leads to a decrease in the cobalt concentration in the solution (∼88%) reaching values of ∼150 ppm, which can be considered a successful reduction from the perspective of water quality. The calcination in air of the synthetized platelets produced exclusively Co3O4. The thermo-X-ray difraction results confirm that Co2CO3(OH)2is transformed over a small range of temperatures (225–235°C) into pure Co3O4. HRTEM images show that the lamellar nanomorphology is preserved in the Co3O4phase. Therefore, understanding the crystallization behaviour of Co2CO3(OH)2can help to minimize environmental problems caused by cobalt pollution and may facilitate the management of methods to obtain phases with specific nanomorphologies used widely in material sciences.

Microstructure and Properties of Nanosemicrystalline Si3N4 Ceramics with Doped Sintering Additives: Part I. Microstructural Characterization of Nanosemicrystalline Si3N4 Powders

1998 ◽  
Vol 13 (9) ◽  
pp. 2580-2587 ◽  
Author(s):  
K. H. Ryu ◽  
J-M. Yang
Keyword(s):  
Microstructural Characterization ◽  
Degree Of Crystallinity ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sintering Additives ◽  
Transmission Electron ◽  
Wet Chemical ◽  
Si3n4 Ceramics

The characteristics of nanosized silicon nitride powders with doped Y2O3 and Al2O3 fabricated by a plasma-reacted chemical process were investigated. The chemical compositions of the powders were analyzed by wet chemical analysis. The morphology and the size distribution were determined by transmission electron microscopy (TEM). TEM with energy dispersive spectroscopy (EDS) was used to verify the existence of sintering additives in each individual particle. The crystal structure of the powders was identified by the selected area diffraction pattern (SADP). X-ray diffraction (XRD) technique was used for phase analysis and the measurement of degree of crystallinity. The characteristics of chemical bonding was analyzed by using Fourier transform infrared spectroscopy (FTIR).

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