Amorphous/Crystalline Structure And Phase Transformations In Metastable Semiconducting Ge1−xSnx

1993 ◽  
Vol 321 ◽  
Author(s):  
Susanne M. Lee ◽  
Katayun Barmak

ABSTRACTThe semiconducting crystalline alloys, Ge1−xSnx, are of interest due to theoretical predictions about their electronic band structures which make them useful in infrared photodetectors. However the composition region where these alloys have the desired properties is greater than the equilibrium solid solubility limit of Sn in Ge (x<0.01). We have circumvented the solubility limits and produced thin (2000Å) and thick (4–8Μm) films of Gei.xSnx (x<0.31) by rf sputtering. Differential scanning calorimetry (DSC) Measurements were performed to study grain growth and crystallization processes in these highly metastable semiconductors. X-ray and electron diffraction measurements indicated the materials were amorphous, but the fact that some of the films were fine grained polycrystalline samples only became apparent in their DSC spectra. We present models that describe quantitatively the transformation behavior in both sets of films.

1995 ◽  
Vol 398 ◽  
Author(s):  
Joshua W. Kriesel ◽  
Susanne M. Lee

ABSTRACTUsing rf sputtering and post-deposition annealing in a differential scanning calorimeter (DSC), we manufactured bulk (4000 nm) films of crystalline Ge0.83Sn0.17. This Sn concentration is much greater than the solid solubility limit of Sn in Ge (x ≤ 0.01). Continued annealing thermally induces Sn phase separation from the alloy, limiting the ultimate attainable grain size in the metastable crystals. We examine, here, the mechanisms and kinetics of the processes limiting the size of the Ge0.83Sn0.17 polycrystals. From a combination of DSC, electron microprobe, and x-ray diffraction (XRD) measurements, we propose phase transformation mechanisms corresponding to crystallization of amorphous Ge0.83Sn0.17, crystallization of an as-yet unidentified phase of Sn, and phase separation of Sn from the Ge1-xSnx crystals. We were unable to observe the unidentified phase of Sn in XRD, but the phase must be present in the material to account for the quantitative discrepancies (as much as 8 at.%) in Sn percentages determined from each of the DSC, XRD, and electron microprobe measurements. Our models for the various transformation kinetics were corroborated by the subsequent phase-separated Sn melting behavior observed in the DSC: two Sn melting endotherms, one of which was 20–100°C lower than the bulk melting temperature of Sn. This depressed temperature endotherm we speculate represents liquefaction of nanometer-sized (β–Sn clusters.


1994 ◽  
Vol 343 ◽  
Author(s):  
Susanne M Lee

ABSTRACTThrough post-deposition annealing in a differential scanning calorimeter (DSC), we have manufactured both thin (200 nm) and bulk (8000 nm) single phase films of crystalline Ge1–xSnx, using rf sputtering. The Sn concentrations produced ranged up to 31 at.%, well beyond the solid solubility limit of this system. There was a marked difference, in the asdeposited structure, between thick and thin films produced under the same deposition conditions. Quantitative models for both systems are given in this paper and were deduced frorn DSC measurements in conjunction with electron microscopy. The metastable crystalline state in the thin films formed by nucleation and growth from an amorphous phase; whereas in the thick films, the desired phase was already present in the as-deposited films and only growth of preexisting grains was observed upon post-deposition annealing. When annealed to high temperature, the Sn phase separates from the alloys and we postulate here that it does so by nucleation and growth of β-Sn. With this hypothesis, the Sn separation in the 8000 nm thick films was accurately modeled by a two-mechanism process, however, in the 200 nm thick films, only one phase separation mechanism was necessary to accurately fit the data. Both models were corroborated by the subsequent melting behavior of the phase separated Sn which, though it varied depending on the sample being measured, always exhibited a melting endotherm starting 25–35°C lower than the bulk melting temperature of Sn. Speculation on the reasons for this are presented.


2021 ◽  
Vol 575 (1) ◽  
pp. 11-17
Author(s):  
S. Krylova ◽  
I. Gudim ◽  
A. Aleksandrovsky ◽  
A. Vtyurin ◽  
A. Krylov

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3950
Author(s):  
Abeer Alassod ◽  
Syed Rashedul Islam ◽  
Mina Shahriari Khalaji ◽  
Rogers Tusiime ◽  
Wanzhen Huang ◽  
...  

Compositing is an interesting strategy that has always been employed to introduce or enhance desired functionalities in material systems. In this paper, sponges containing polypropylene, lignin, and octavinyl-polyhedral oligomeric silsesquioxane (OV-POSS) were successfully prepared via an easy and elegant strategy called thermally induced phase separation (TIPS). To fully explore the behaviour of different components of prepared sponges, properties were characterized by a thermogravimetric analyser (TGA), differential scanning calorimetry (DSC), Fourier transform infrared measurement (FTIR), and scanning electron microscopy (SEM). Furthermore, wettability properties toward an organic liquid and oil were investigated. The FTIR analysis confirmed the chemical modification of the components. TGA and DSC measurements revealed thermal stability was much better with an increase in OV-POSS content. OV-POSS modified sponges exhibited ultra-hydrophobicity and high oleophilicity with water contact angles of more than 125°. The SEM revealed that POSS molecules acted as a support for reduced surface roughness. Moreover, OV-POSS-based blend sponges showed higher sorption capacities compared with other blend sponges without OV-POSS. The new blend sponges demonstrated a potential for use as sorbent engineering materials in water remediation.


2021 ◽  
Author(s):  
Jinsun Lee ◽  
Xinghui Liu ◽  
Ashwani Kumar ◽  
Yosep Hwang ◽  
Eunji Lee ◽  
...  

This work highlights the importance of a rational design for more energetically suitable nitrogen reduction reaction routes and mechanisms by regulating the electronic band structures with phase-selective defect sites.


1961 ◽  
Vol 14 (3) ◽  
pp. 344 ◽  
Author(s):  
EG McRae

The theory of Part I of this series (McRae 1961) is developed in detail for dimeric systems. The simplest possible theory of the exciton states for a system of two non-rigid molecules is obtained through the use of perturbation theory. The theory makes possible the prediction of electronic band structures in absorption and fluorescence spectra as functions of the theoretical Davydov splitting for two rigid molecules. Numerical calculations are made for a dimer of a typical dye, and the results are compared with the observed absorption spectrum of the 1,1'-diethyl-2,2'-pyridocyanine iodide dimer.


2009 ◽  
Vol 480 (4-6) ◽  
pp. 273-277 ◽  
Author(s):  
C.A. Barboza ◽  
J.M. Henriques ◽  
E.L. Albuquerque ◽  
E.W.S. Caetano ◽  
V.N. Freire ◽  
...  

2011 ◽  
Vol 76 (5) ◽  
pp. 553-566
Author(s):  
Christian Näther ◽  
Inke Jeß

Clobetasone butyrate was investigated for polymorphism and pseudopolymorphism. Solvent mediated conversion experiments reveal that the commercially available form I represent the thermodynamically most stable form at room temperature and DSC measurements shows that it should also be the most stable form until melting. Form I crystallizes in space groupP212121with three crystallographically independent molecules of similar conformation. From methanol an additional pseudo polymorphic form was discovered. In the crystal structure (space groupP212121) the solvent molecules are connected to the clobetasone butyrate molecules by O–H···O hydrogen bonding. Investigations of the solvate using thermogravimetry, differential thermoanalysis as well as differential scanning calorimetry proves, that on solvent removal an amorphous form is obtained that crystallizes into form I on further heating.


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