Hydrocarbon Ecr Reactive Ion Etching of III-V Semiconductors with Sims Plasma Probe Diagnostics

1993 ◽  
Vol 324 ◽  
Author(s):  
Douglas L. Melville ◽  
J.G. Simmons ◽  
D.A. Thompson
Keyword(s):  
Gas Flow ◽  
Reactive Ion Etching ◽  
Microwave Cavity ◽  
Multiple Quantum ◽  
Volatile Product ◽  
Reaction Products ◽  
Dominant Group ◽  
Ion Etching ◽  
Probe Diagnostics ◽  
Plasma Probe

AbstractThe advantages of in-situ SIMS plasma probe diagnostics are highlighted in low pressure hydrocarbon ECR reactive ion etching (RIE) of III-V materials. Three aspects of the RIE process are investigated. First, the dominant ion species in a CH4/H2/Ar plasma are recorded at various chamber pressures, ECR powers, CH4/(CH4+H2) gas flow ratios and microwave cavity tuning. These studies have improved our understanding of the effects of these parameters on the relative concentrations of reactive precursor species in the plasma and have led to more rapid optimization of the etch system. Secondly, SIMS has been used for identification of reaction products from the III-V surface at the optimized plasma conditions. The Ar diluted mixture gives rise to significant levels of group V hydrides and organometallic compounds and the dominant group III volatile ions have been positively identified as dimethyl species. The third and final aspect reported is the application of volatile product identification to endpoint detection. In lcm2 multiple quantum well samples, layers as thin as 50Å are easily distinguishable.

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Microfabrication of SiN Membrane Nanosieve Using Anisotropic Reactive Ion Etching (ARIE) with an Ar/CF4 Gas Flow

2011 ◽  
Vol 11 (5) ◽  
pp. 4511-4516 ◽  
Author(s):  
Dae-Sik Lee ◽  
Hyun Woo Song ◽  
Kwang Hyo Chung ◽  
Mun Yeon Jung ◽  
Hyun C. Yoon
Keyword(s):  
Gas Flow ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Sin Membrane

Metallic Layer Reflectance Analysis Using Design of Experiment

2014 ◽  
Vol 893 ◽  
pp. 461-464
Author(s):  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Ong Tee Say ◽  
Kok Soo Yih
Keyword(s):  
Grain Size ◽  
Design Of Experiment ◽  
Test Specimen ◽  
Gas Flow ◽  
Influence Factor ◽  
Reactive Ion Etching ◽  
Surface Reflectance ◽  
Ion Etching ◽  
Aluminium Layer ◽  
Reflectance Analysis

In this work, a Full Factorial Experimentation technique, Design of Experiment (DOE) was developed and used to control the parameter of RIE (Reactive Ion Etching) process on a silicon wafer with aluminium layer. The objective of this work is to examine the Reactive Ion Etching (RIE) process on aluminium with different parameter, which are temperature, vacuum, RF (Radio Frequency) power and gas flow. Then, AFM (Atomic Force Microscope) and Lambda 950 spectrometer are used to analyse the grain size and light reflectance on the test specimen after RIE process. From the result, all four parameters of RIE were give an effect on grain size and surface reflectance on the test specimen. The parameter of gas flow is the most influence factor for grain size and surface reflectance in RIE process for aluminium layer compared to other parameters in this work.

Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching

1993 ◽  
Vol 298 ◽  
Author(s):  
F. Scott Johnson ◽  
Veena Misra ◽  
J. J. Wortman ◽  
Leanne R. Martin ◽  
Gari A. Harris ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Silicon Dioxide ◽  
Silicon Germanium ◽  
Gas Flow ◽  
Substrate Surface ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Selective Removal ◽  
Ion Etching ◽  
Narrow Base

AbstractThe use of both chemical and reactive ion etching for the selective removal of SixGe1-x alloys with respect to both silicon and silicon dioxide has been investigated. We have found that a solution of NH4OH:H2O2:H2O is effective in selectively etching the SixGe1-x films with respect to both of these materials. The chemical composition of the substrate surface after removal of insitu doped SixGe1-x films was evaluated using EDS and SIMS. Diffusion from insitu doped Si0.7Ge0.3, followed by selective removal, was used to demonstrate self-aligned npn dopant profiles with narrow base widths. Reactive ion etching of SixGe1-x alloys was investigated using SF6, CF4, and Cl2 based chemistries. Pressure, power, and gas flow ratios were optimized to provide the least isotropic etch possible for SixGe1-x films containing approximately 40% Ge. Selectivity and degree of anisotropic etching were determined as a function of Ge content for samples with 0% to 100% Ge. Samples were analyzed using SEM and ellipsometry. Highest selectivities were achieved using SF6 and O2.

Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
J.J. Van Glabbeek ◽  
G.A.C.M. Spierings ◽  
M.J.E. Ulenaers ◽  
G.J.M. Dormans ◽  
P.K. Larsen
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Flow Ratio ◽  
Ion Etching ◽  
Ferroelectric Capacitor ◽  
Chemical Enhancement ◽  
Gas Flow Ratio ◽  
Ar Gas ◽  
Ferroelectric Capacitors

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

1995 ◽  
Vol 395 ◽  
Author(s):  
W. C. Hughes ◽  
W. H. Rowland ◽  
M. A. L. Johnson ◽  
J. W. Cook ◽  
J. F. Schetzina
Keyword(s):  
Gas Flow ◽  
Light Emitting Diode ◽  
Reactive Ion Etching ◽  
Device Fabrication ◽  
Wet Etching ◽  
Organic Chemical ◽  
Scanning Electron Micrographs ◽  
Ion Etching ◽  
Etch Rates ◽  
Made In

ABSTRACTThe III-V nitrides are promising materials for use in UV-blue-green optoelectronics, high-temperature electronics, and negative-electron-affinity (NEA) electron emitter applications. In order to realize this potential, it is important to develop an etching technology for device fabrication. The stability of the III-V nitrides to harsh chemical environments makes most wet etching extremely difficult, so that dry etching alternatives are desirable. Recent experiments have shown that BCI3-based chemistries are effective for reactive ion etching of GaN and that KOH-based solutions may preferentially etch AIN from GaN. This paper reports on the use of BCI3 for etching AIN and AlGaN in addition to GaN and the creation of structures such as mesas and lines. It also examines the potential use of potassium Hydroxide (KOH) as a wet etchant of the nitrides. AIN, AlGaN, and GaN films grown by either metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) were patterned with Ni in 250 μm × 250 μm squares and 5 μm wide lines to create mesas and lines for typical light emitting diode (LED) or laser diode applications. Reactive ion etching was performed in a commercial reactor using BCI3 pressures ranging from 5 to 30 mTorr. Gas flow rates of 5 to 50 seem and RF powers of 50 to 150 W were employed. High nitride etch rates of up to 730 Å/min. were observed but lower etch rates were needed to avoid etching of the Ni mask. Smooth mesa surfaces and sidewalls were observed in scanning electron micrographs of the etched nitride structures. Mesas as small as 5 μm × 5 μm were patterned and made in this way. Lines were also made in a similar manner as narrow as 5 μm on GaN/AIN epilayers. Subsequent wet etching of these lines showed that KOH-based solutions such as AZ400K developer attack not only AIN but also GaN depending upon the quality of the film. Possibilities for using this wet etch as a defect etchant or selective etch of nitrides on SiC are discussed.

Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

2014 ◽  
Vol 925 ◽  
pp. 140-143
Author(s):  
Moganraj Palianysamy ◽  
Zaliman Sauli ◽  
Uda Hashim ◽  
Vithyacharan Retnasamy ◽  
Steven Taniselass ◽  
...  
Keyword(s):  
Experimental Study ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Important Process ◽  
Ion Etching ◽  
Argon Gas ◽  
Atomic Force ◽  
Surface Morphologies

Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and DOE offers a better way to optimize the desired outcome.

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