Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

1995 ◽  
Vol 395 ◽  
Author(s):  
W. C. Hughes ◽  
W. H. Rowland ◽  
M. A. L. Johnson ◽  
J. W. Cook ◽  
J. F. Schetzina
Keyword(s):  
Gas Flow ◽  
Light Emitting Diode ◽  
Reactive Ion Etching ◽  
Device Fabrication ◽  
Wet Etching ◽  
Organic Chemical ◽  
Scanning Electron Micrographs ◽  
Ion Etching ◽  
Etch Rates ◽  
Made In

ABSTRACTThe III-V nitrides are promising materials for use in UV-blue-green optoelectronics, high-temperature electronics, and negative-electron-affinity (NEA) electron emitter applications. In order to realize this potential, it is important to develop an etching technology for device fabrication. The stability of the III-V nitrides to harsh chemical environments makes most wet etching extremely difficult, so that dry etching alternatives are desirable. Recent experiments have shown that BCI3-based chemistries are effective for reactive ion etching of GaN and that KOH-based solutions may preferentially etch AIN from GaN. This paper reports on the use of BCI3 for etching AIN and AlGaN in addition to GaN and the creation of structures such as mesas and lines. It also examines the potential use of potassium Hydroxide (KOH) as a wet etchant of the nitrides. AIN, AlGaN, and GaN films grown by either metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) were patterned with Ni in 250 μm × 250 μm squares and 5 μm wide lines to create mesas and lines for typical light emitting diode (LED) or laser diode applications. Reactive ion etching was performed in a commercial reactor using BCI3 pressures ranging from 5 to 30 mTorr. Gas flow rates of 5 to 50 seem and RF powers of 50 to 150 W were employed. High nitride etch rates of up to 730 Å/min. were observed but lower etch rates were needed to avoid etching of the Ni mask. Smooth mesa surfaces and sidewalls were observed in scanning electron micrographs of the etched nitride structures. Mesas as small as 5 μm × 5 μm were patterned and made in this way. Lines were also made in a similar manner as narrow as 5 μm on GaN/AIN epilayers. Subsequent wet etching of these lines showed that KOH-based solutions such as AZ400K developer attack not only AIN but also GaN depending upon the quality of the film. Possibilities for using this wet etch as a defect etchant or selective etch of nitrides on SiC are discussed.

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Hydrocarbon Ecr Reactive Ion Etching of III-V Semiconductors with Sims Plasma Probe Diagnostics

1993 ◽  
Vol 324 ◽  
Author(s):  
Douglas L. Melville ◽  
J.G. Simmons ◽  
D.A. Thompson
Keyword(s):  
Gas Flow ◽  
Reactive Ion Etching ◽  
Microwave Cavity ◽  
Multiple Quantum ◽  
Volatile Product ◽  
Reaction Products ◽  
Dominant Group ◽  
Ion Etching ◽  
Probe Diagnostics ◽  
Plasma Probe

AbstractThe advantages of in-situ SIMS plasma probe diagnostics are highlighted in low pressure hydrocarbon ECR reactive ion etching (RIE) of III-V materials. Three aspects of the RIE process are investigated. First, the dominant ion species in a CH4/H2/Ar plasma are recorded at various chamber pressures, ECR powers, CH4/(CH4+H2) gas flow ratios and microwave cavity tuning. These studies have improved our understanding of the effects of these parameters on the relative concentrations of reactive precursor species in the plasma and have led to more rapid optimization of the etch system. Secondly, SIMS has been used for identification of reaction products from the III-V surface at the optimized plasma conditions. The Ar diluted mixture gives rise to significant levels of group V hydrides and organometallic compounds and the dominant group III volatile ions have been positively identified as dimethyl species. The third and final aspect reported is the application of volatile product identification to endpoint detection. In lcm2 multiple quantum well samples, layers as thin as 50Å are easily distinguishable.

Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

2004 ◽  
Author(s):  
Ronald Hon ◽  
Shawn X. D. Zhang ◽  
S. W. Ricky Lee
Keyword(s):  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Laser Drilling ◽  
Wet Etching ◽  
Ion Etching ◽  
Through Silicon Vias ◽  
Deep Reactive Ion Etching ◽  
Definition Of ◽  
Silicon Vias ◽  
Wafer Thinning

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and time needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.

Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching

2005 ◽  
Vol 36 (1) ◽  
pp. 51-54 ◽  
Author(s):  
M.A.R. Alves ◽  
D.F. Takeuti ◽  
E.S. Braga
Keyword(s):  
Reactive Ion Etching ◽  
Wet Etching ◽  
Ion Etching

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Reactive Ion Etching of Copper with SiCl4 and CCl2F2

1990 ◽  
Vol 201 ◽  
Author(s):  
B. J. Howard ◽  
S. K. Wolterman ◽  
W. J. Yoo ◽  
B. Gittleman ◽  
CH. SteinbrÜchel
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Amorphous Carbon ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Gas Composition ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Etch Rates ◽  
Interconnect Material

AbstractCopper may become an alternative to aluminum as an interconnect material in future multilevel metallization schemes if it is possible to pattern Cu by dry etching in a manufacturable process. Here we report results on the reactive ion etching of Cu in SiCl4 /Ar, SiCl4/N2, and CCl2F2/Ar plasmas. Etch rates have been investigated as a function of various plasma parameters, such as gas composition, pressure, etc., and substrate temperature. We have obtained etch rates as high as 850 Å /min with SiCl4/N2 and a substrate temperature of ∼ 200 ° C. Also, it appears feasible to pattern Cu anisotropically using either polyimide or amorphous carbon as a high-temperature etch mask.

Dry Etching of Sol-Gel Pzt

1998 ◽  
Vol 546 ◽  
Author(s):  
R. Zeto ◽  
B. Rod ◽  
M. Dubey ◽  
M. Ervin ◽  
J. Conrad ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Etch Rate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Milling ◽  
Ion Etching ◽  
Wide Range ◽  
Etch Rates ◽  
Argon Ion

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

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