scholarly journals Gas-Phase Silicon Atom Densities in the Chemical Vapor Deposition of Silicon from Silane

1993 ◽  
Vol 334 ◽  
Author(s):  
Michael E. Coltrin ◽  
William G. Breiland ◽  
Pauline Ho
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Silicon Atom ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Number Density ◽  
Atom Number ◽  
Density Profiles ◽  
Calculated Density

AbstractSilicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH2 is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

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