Deposition of Cerium Dioxide Thin Films on Silicon Substrates by Atomic Layer Epitaxy

1993 ◽  
Vol 335 ◽  
Author(s):  
Heini Mölsä ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Steric Hindrance ◽  
Cerium Dioxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Silicon Substrates ◽  
Reactor Pressure

AbstractCeO2 overlayers up to 360 nm thick were deposited on Si(100) substrates in a flowtype ALE reactor from Ce(thd)4 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) precursor and ozone. The growth rate was studied as a function of deposition and source temperatures, reactor pressure and pulse durations. The films were characterized for crystallinity, thickness and composition by using XRD, profilometry, XRF, RBS, XPS and SIMS techniques. Films deposited at 375 °C showed a preferential (110) orientation while at 425 °C they were (111) preferentially oriented. Due to the steric hindrance caused by the bulky precursor the growth rate was only 0.4 Å/cycle.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films

2000 ◽  
Vol 10 (8) ◽  
pp. 1857-1861 ◽  
Author(s):  
Matti Putkonen ◽  
Timo Sajavaara ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Magnesium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 110-114 ◽  
Author(s):  
C LEE ◽  
J LIM ◽  
S PARK ◽  
H KIM
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Zno Thin Films ◽  
Nitrogen Doped ◽  
P Type

Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy

1994 ◽  
Vol 250 (1-2) ◽  
pp. 72-80 ◽  
Author(s):  
Mikko Ritala ◽  
Markku Leskelä ◽  
Lauri Niinistö ◽  
Thomas Prohaska ◽  
Gernot Friedbacher ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Atomic Layer Epitaxy

AFM and STM studies on In2O3 and ITO thin films deposited by atomic layer epitaxy

1996 ◽  
Vol 99 (2) ◽  
pp. 91-98 ◽  
Author(s):  
Timo Asikainen ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Thomas Prohaska ◽  
Gernot Friedbacher ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Ito Thin Films
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