A Proposed Regrowth Mechanism for the Enhancement of Schottky Barrier Height to N-GAAS

1994 ◽  
Vol 337 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Gaas Layer ◽  
Dark Field ◽  
Schottky Barriers ◽  
Semiconductor Interface ◽  
Al Content ◽  
Current Voltage ◽  
High Al Content

ABSTRACTA systematic study of the enhancement of Schottky barriers to n-GaAs diodes has been carried out using the Ni-Al binary system. The diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/n-GaAs, have been realized by sputter deposition at a base pressure ∼2xl0-7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs contacts. The enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. The formation of this (Al,Ga)As layer was explained in terms of a regrowth mechanism. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer is believed to react with the Ni-Al layer to form the (Al,Ga)As layer when subjected to a high temperature annealing. A (200) dark field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase.

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights

1993 ◽  
Vol 318 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Cross Section ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Dark Field ◽  
Transmission Electron Microscopy Image ◽  
Transmission Electron

ABSTRACTThermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 seconds, have been realized by sputter deposition from an Al target to (100) n-GaAs at a base pressure ∼2×10−7 Torr. The Schottky barrier height was 0.75 eV (0.9 eV) when using the I-V (C-V) method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 seconds. This barrier height, 0.97 eV, is the highest value reported for Al/n-GaAs diodes. The interfacial stability between Al and GaAs has been examined by cross section transmission electron microscopy. A (200) dark field cross section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

scholarly journals Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition

2016 ◽  
Vol 119 (9) ◽  
pp. 095302 ◽  
Author(s):  
Robert Balsano ◽  
Chris Durcan ◽  
Akitomo Matsubayashi ◽  
Avyaya J. Narasimham ◽  
Vincent P. LaBella
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Semiconductor Interface ◽  
Interface Composition ◽  
Spatially Resolved

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

scholarly journals Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2678
Author(s):  
Philipp Wendel ◽  
Dominik Dietz ◽  
Jonas Deuermeier ◽  
Andreas Klein
Keyword(s):  
Magnetron Sputtering ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Oxygen Vacancies ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Hysteresis Behavior ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction

MRS Advances ◽  
2019 ◽  
Vol 4 (38-39) ◽  
pp. 2127-2134
Author(s):  
Neetika ◽  
Ramesh Chandra ◽  
V. K. Malik
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Schottky Junction ◽  
Transition Metal Dichalcogenide ◽  
Dc Sputtering ◽  
Current Voltage ◽  
Dc Sputtering Technique

AbstractMolybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (∼1.2 eV) for few layer and direct band gap (∼1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS2 thin film (∼10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ∼ 0.785x10-2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.

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