The Effect of Incident Kinetic Energy on Stress in Sputter-Deposited Refractory-Metal Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
T.J. Vink ◽  
J.B.A.D. van Zon ◽  
J.C.S. Kools ◽  
W. Walrave
Keyword(s):  
Kinetic Energy ◽  
Refractory Metal ◽  
Film Growth ◽  
Intrinsic Stress ◽  
Metal Thin Films ◽  
Quantitative Correlation ◽  
Magnetron Sputter Deposition ◽  
Sputter Deposited ◽  
Background Gas ◽  
Incident Kinetic Energy

ABSTRACTIn magnetron sputter deposition the intrinsic stress in refractory-metal films changes from compressive to tensile on increasing the working-gas pressure. This pressure dependence is linked to the particle transport process from target to substrate during deposition. In this work we apply a Monte Carlo (MC) technique to simulate the transport of sputtered atoms and reflected neutrals in a background gas. Specific examples of Cr, Mo and W thin film growth in Ar and Ne gas ambients are presented. Trends in thermalization of the depositing atoms coincided with the observed trends in the compressive-to-tensile stress curves, for the different target and working-gas combinations studied. Furthermore, a quantitative correlation between the stress transition pressures and the incident kinetic energy of both sputtered atoms and reflected neutrals during film growth was found. In this case the contribution of the latter species was weighted with a relatively low factor.

Simulation of thin film step coverage and microstructure

1989 ◽  
Vol 67 (4) ◽  
pp. 347-350 ◽  
Author(s):  
M. J. Brett ◽  
K. L. Westra ◽  
T. Smy
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Substrate Surface ◽  
Surface Profile ◽  
Mobility Model ◽  
Surface Mobility ◽  
Planar Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Sputter Deposited

Ballistic deposition of hard discs has been used for computer simulation of thin film growth over a step on a substrate surface. Up to 16 000 particles were deposited per simulation using an angular distribution of particle trajectories representative of planar magnetron sputter deposition and incorporating a surface mobility model for deposited particles. The simulated films show a surface profile evolution during growth and an orientation of columnar film microstructure that are very close to the surface profile and microstructure observed in real films of aluminum sputter deposited over an oxide step on a silicon substrate.

Ion-Beam-Induced Modifications of Thin Films: Growth Simulations

1987 ◽  
Vol 93 ◽  
Author(s):  
Karl-Heinz Müller
Keyword(s):  
Kinetic Energy ◽  
Film Growth ◽  
Ion Beam ◽  
Film Surface ◽  
Energetic Ions ◽  
Film Microstructure ◽  
Deposition Processes ◽  
Incident Kinetic Energy ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTIf the thermal adatom mobility is limited during film growth, the kinetic energy delivered to the film surface by arriving species is the key parameter which determines the resulting film microstructure and properties. Kinetic models and growth simulations of nonequilibrium film growth have been used to study the influence of incident kinetic energy of adatoms and energetic ions on the film microstructure, microporosity, density, stoichiometry and epitaxy. Deposition processes like vapor, sputter, ion-assisted and ionized cluster beam deposition, could be examined in detail with particular emphasis on optical coatings. The theoretical descriptions used are based on the solid-gas, thermal spike, collision cascade and molecular dynamics model.

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

scholarly journals Sputter Deposited Metal Layers Embedded in Composites—From Fundamentals to Applications

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 190
Author(s):  
Florian Cougnon ◽  
Mathias Kersemans ◽  
Wim Van Paepegem ◽  
Diederik Depla
Keyword(s):  
Thin Films ◽  
Heat Flux ◽  
Sputter Deposition ◽  
Image Correlation ◽  
Fiber Reinforced Polymers ◽  
Thermal Probe ◽  
Reinforced Polymers ◽  
Magnetron Sputter Deposition ◽  
Sputter Deposited ◽  
Metal Layers

Due to the low heat flux towards the substrate, magnetron sputter deposition offers the possibility to deposit thin films on heat sensitive materials such as fiber-reinforced polymers, also known as composite materials. Passive thermal probe measurements during the sputter deposition of metal layers show indeed that the temperature increase remains well below 25 °C for film thicknesses up to 600 nm. The latter thickness threshold is based on the influence of embedded metal films on the adhesion of the composite plies. Films thicker than this threshold deteriorate the mechanical integrity of the composite. The introduction of the uncured composite in the vacuum chamber strongly affects the base pressure by outgassing of impurities from the composite. The impurities affect the film properties as illustrated by their impact on the Seebeck coefficient of sputter deposited thermocouples. The restrictions to embed thin films in composites, as illustrated by both the heat flux measurements, and the study on the influence of impurities, are however not insurmountable. The possibility to use embedded thin films will be briefly demonstrated in different applications such as digital volume image correlation, thermocouples, and de-icing.

Effect of Non-equilibrium Pulsed Ejection of Si Species into Background Gas on the Formation of Si Nanocrystallite and Nanocrystal-film

2011 ◽  
Vol 1305 ◽  
Author(s):  
Ikurou Umezu ◽  
Shunto Okubo ◽  
Akira Sugimura
Keyword(s):  
Laser Ablation ◽  
Film Growth ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Hydrogen Gas ◽  
Gas Pressure ◽  
Spatial Confinement ◽  
The Individual ◽  
Background Gas ◽  
Non Equilibrium

ABSTRACTThe Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.

Roles of aluminium and chromium in sulfidation and oxidation of sputter-deposited Al- and Cr-refractory metal alloys

2002 ◽  
Vol 44 (2) ◽  
pp. 285-301 ◽  
Author(s):  
H. Habazaki ◽  
H. Mitsui ◽  
K. Ito ◽  
K. Asami ◽  
K. Hashimoto ◽  
...  
Keyword(s):  
Refractory Metal ◽  
Metal Alloys ◽  
Sputter Deposited ◽  
Refractory Metal Alloys
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