Effect of Irradiation Spectrum on the Microstructure of Ion-Irradiated A120O3

1994 ◽  
Vol 373 ◽  
Author(s):  
S. J. Zinkle
Keyword(s):  
Cross Section ◽  
Diffusion Processes ◽  
Ion Irradiation ◽  
Defect Cluster ◽  
The Other ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Light Ions ◽  
Alpha Alumina

AbstractPolycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe+ to 1 MeV H+ ions at 650°C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as I MeV H+ ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes.

scholarly journals Irradiation Spectrum and Ionization-Induced Diffusion Effects in Ceramics

1996 ◽  
Vol 439 ◽  
Author(s):  
S. J. Zinkle
Keyword(s):  
Ionizing Radiation ◽  
Cross Section ◽  
The Other ◽  
Dislocation Loops ◽  
Defect Production ◽  
Transmission Electron ◽  
Diffusion Effects ◽  
Light Ions ◽  
Main Components ◽  
Atom Energy

AbstractThere are two main components to the irradiation spectrum which need to be considered inradiation effects studies on nonmetals, namely the primary knock-on atom energy spectrum and ionizing radiation. The published low-temperature studies on A12O3 and MgO suggest that the defect production is nearly independent of the average primary knock-on atom energy, in sharp contrast to the situation for metals. On the other hand, ionizing radiation has been shown to exert a pronounced influence on the microstructural evolution of both semiconductors and insulators under certain conditions. Recent work on the microstructure of ion-irradiated ceramics is summarized, which provides evidence for significant ionization-induced diffusion. Polycrystalline samples of MgO, A12O3, and MgAl2O4 were irradiated with various ions ranging from 1 MeV H+ to 4 MeV Zr+ ions at temperatures between 25 and 650°C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. Dislocation loop nucleation was effectively suppressed in specimens irradiated with light ions, whereas the growth rate of dislocation loops was enhanced. The sensitivity to irradiation spectrum is attributed to ionization-induced diffusion. The interstitial migration energies in MgAl2O4 and A12O3 are estimated to be ≤0.4 eV and ≤0.8 eV, respectively for irradiation conditions where ionization-induced diffusion effects are expected to be negligible.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Müller ◽  
M. L. Jenkins ◽  
C. Abromeit ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Small Population ◽  
Dislocation Loops ◽  
Near Surface ◽  
Ion Energy ◽  
Heavy Ion Irradiation ◽  
Transmission Electron

AbstractStereo transmission electron microscopy has been used to characterise the distribution in depth of disordered zones and associated dislocation loops in the ordered alloys Ni3Al and Cu3Au after heavy ion irradiation, most extensively for Ni3Al irradiated with 50 keV Ta+ ions at a temperature of 573 K. The Cu3Au specimen was irradiated with 50 keV Ni+ ions at an incident angle of 45° at a temperature of 373 K. In Ni3Al the defect yield, i.e. the probability for a disordered zone to contain a loop was found to be strongly dependent on the depth of the zone in the foil, varying from about 0.7 for near-surface zones to about 0.2 in the bulk. The sizes and shapes of disordered zones were only weakly dependent on depth, except for a small population of zones very near the surface which were strongly elongated parallel to the incident ion beam. In Cu3Au the surface had a smaller but still significant effect on the defect yield. The dependence of the tranverse disordered zone diameter d on ion energy E for Ta+ irradiation of NiA was found to follow a relationship d = k1, E1/α with k, = 2.4 ± 0.4 and α = 3.3 ± 0.4. A similar relationship with the same value of α is valid for a wide variety of incident ion/target combinations found in the literature.

scholarly journals Effect of He-appm/DPA ratio on the damage microstructure of tungsten

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2893-2899 ◽  
Author(s):  
R.W. Harrison ◽  
H. Amari ◽  
G. Greaves ◽  
J.A. Hinks ◽  
S.E. Donnelly
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
Dislocation Loops ◽  
Vacancy Clusters ◽  
Transmission Electron ◽  
Damage Structure ◽  
Ordered Array ◽  
20 Nm

AbstractIn-situ ion irradiation and transmission electron microscopy has been used to examine the effects of the He appm to DPA ratio, temperature and dose on the damage structure of tungsten (W). Irradiations were performed with 15 or 60 keV He+ ions, achieving He-appm/displacements per atom (DPA) ratios of ∼40,000 and ∼2000, respectively, at temperatures between 500 and 1000°C to a dose of ∼3 DPA. A high number of small dislocation loops with sizes around 5–20 nm and a He bubble lattice were observed for both He-appm/DPA ratios at 500°C with a bubble size ∼1.5 nm. Using the g.b=0 criterion the loops were characterised as b = ±1/2<111> type. At 750°C bubbles do not form an ordered array and are larger in size compared to the irradiations at 500°C, with a diameter of ∼3 nm. Fewer dislocation loops were observed at this temperature and were also characterised to be b = ±1/2<111> type. At 1000°C, no dislocation loops were observed and bubbles grew as a function of fluence attributed to vacancy mobility being higher and vacancy clusters becoming mobile.

scholarly journals EFFECT OF SEVERE PLASTIC DEFORMATION ON RADIATION HARDENING OF T91 FERRITIC-MARTENSITIC STEEL

2021 ◽  
pp. 35-42
Author(s):  
V.N. Voyevodin ◽  
G.D. Tolstolutskaya ◽  
S.A. Karpov ◽  
A.N. Velikodnyi ◽  
M.A. Tikhonovsky ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Severe Plastic Deformation ◽  
Martensitic Steel ◽  
Ion Irradiation ◽  
Dose Range ◽  
Fold Increase ◽  
Radiation Hardening ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Means Of Transmission

Effect of thermomechanical treatment on radiation hardening behavior in T91 ferritic-martensitic steel was evaluated. An applying of severe plastic deformation (SPD) by the “upsetting-extrusion” method and subsequent heat treatment led to a considerable grain refinement, crushing of martensite lamellas, reduction of MX carbides size and their more uniform distribution. Nanoindentation measurements of SPD-modified steel revealed a 1.4-fold increase in the hardness relative to the initial steel. Irradiation response of modified steel was examined after 1.4 MeV Ar+ ion irradiations in the dose range of 10…45 displacements per atom (dpa) at room temperature and 460 °C. Microstructure characterization was performed by means of transmission electron microscopy (TEM). It was found that dislocation loops and nano-sized argon bubbles dominated the damage microstructure after ion irradiation. The effects of SPD-induced transformations as well as nano-bubbles formation are discussed regarding to the hardening phenomenon observed in irradiated steel.

scholarly journals Edge-On Ion Irradiation of Electron Microscope Specimens

1992 ◽  
Vol 268 ◽  
Author(s):  
Mauro P. Otero ◽  
Charles W. Allen
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Ion Irradiation ◽  
Special Technique ◽  
Plan View ◽  
Depth Direction ◽  
Transmission Electron ◽  
Foil Specimen

ABSTRACTA special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect to the irradiation. The results of amorphization of Si, irradiated in this orientation by 1 or 1.5 MeV Kr, are presented and briefly compared with the usual plan view observations. The limitations of the technique are discussed and several experiments which might profitably employ this technique are suggested.

Temperature Dependence of Amorphization for Zirconolite and Perovskite Irradiated with 1 Mev Krypton Ions

1994 ◽  
Vol 353 ◽  
Author(s):  
T. J. White ◽  
R. C. Ewing ◽  
L. M. Wang ◽  
J. S. Forrester ◽  
C. Montross
Keyword(s):  
Cross Section ◽  
Heavy Ions ◽  
Arrhenius Plot ◽  
Ion Irradiation ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Large Cross Section ◽  
Magnéli Phases ◽  
Transmission Electron ◽  
Argon Ions

AbstractA transmission electron microscope investigation was made of zirconolites and perovskites irradiated to amorphization with 1 MeV krypton ions using the HVEM-Tandem Facility at Argonne National Laboratory. Three specimens were examined - a prototype zirconolite CaZrTi2O7, a gadolinium doped zirconolite Ca0.75Gd0.50Zr0.75Ti2O7and a uranium doped zirconolite Ca0.75U0.50Zr0.75Ti2O7. The critical amorphization dose Dc was determined at several temperatures between 20K to 675K. Dc was inversely proportional with temperature. For example, pure zirconolite requiring 10x the dose for amorphization at 475K compared with gadolinium zirconolite. Using an Arrhenius plot, the activation energy Ea for annealing in these compounds was found to be 0.129 eV and 0.067 eV respectively. The greater ease of amorphization for the gadolinium sample is probably a reflection of this element’s large cross section for interaction with heavy ions. Uranium zirconolite was very susceptible to damage and amorphised under 4 keV argon ions during the preparation of microscope specimens. In each sample, zirconolite coexisted with minor perovskite, reduced rutile (Magneli phases) and zirconia. These phases were more resistant to ion irradiation than zirconolite. Even for high gadolinium loadings, perovskite (Ca0.8Gd0.2TiO3) was 3-4 times more stable to ion irradiation than the surrounding zirconolite crystals.

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Renata A. Camillo-Castillo ◽  
Kevin. S. Jones ◽  
Mark E. Law ◽  
Leonard M. Rubin
Keyword(s):  
Defect Density ◽  
Low Energy ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transmission Electron ◽  
Concentration Peak ◽  
Scale Down

AbstractTransient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750°C; the samples were then subjected to a spike RTA at 950°C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550°C, suggesting that this may be an optimal condition for trapping interstitials.

Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Andres F. Gutierrez ◽  
Kevin S. Jones ◽  
Daniel F. Downey
Keyword(s):  
Time Window ◽  
Low Energy ◽  
Dislocation Loops ◽  
Medium Energy ◽  
Evolutionary Pathway ◽  
Plan View ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Defect Evolution

ABSTRACTPlan-view transmission electron microscopy (PTEM) was used to characterize defect evolution upon annealing of low-to-medium energy, 5-30 keV, germanium implants into silicon. The implant dose was 1 × 1015 ions/cm2, sufficient for surface amorphization. Annealing of the samples was done at 750 °C in nitrogen ambient by both rapid thermal annealing (RTA) and conventional furnace, and the time was varied from 10 seconds to 360 minutes. Results indicate that as the energy drops from 30 keV to 5 keV, an alternate path of excess interstitials evolution may exist. For higher implant energies, the interstitials evolve from clusters to {311}'s to loops as has been previously reported. However, as the energy drops to 5 keV, the interstitials evolve from clusters to small, unstable dislocation loops which dissolve and disappear within a narrow time window, with no {311}'s forming. These results imply there is an alternate evolutionary pathway for {311} dissolution during transient enhanced diffusion (TED) for these ultra-low energy implants.

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