scholarly journals Irradiation Spectrum and Ionization-Induced Diffusion Effects in Ceramics

1996 ◽  
Vol 439 ◽  
Author(s):  
S. J. Zinkle
Keyword(s):  
Ionizing Radiation ◽  
Cross Section ◽  
The Other ◽  
Dislocation Loops ◽  
Defect Production ◽  
Transmission Electron ◽  
Diffusion Effects ◽  
Light Ions ◽  
Main Components ◽  
Atom Energy

AbstractThere are two main components to the irradiation spectrum which need to be considered inradiation effects studies on nonmetals, namely the primary knock-on atom energy spectrum and ionizing radiation. The published low-temperature studies on A12O3 and MgO suggest that the defect production is nearly independent of the average primary knock-on atom energy, in sharp contrast to the situation for metals. On the other hand, ionizing radiation has been shown to exert a pronounced influence on the microstructural evolution of both semiconductors and insulators under certain conditions. Recent work on the microstructure of ion-irradiated ceramics is summarized, which provides evidence for significant ionization-induced diffusion. Polycrystalline samples of MgO, A12O3, and MgAl2O4 were irradiated with various ions ranging from 1 MeV H+ to 4 MeV Zr+ ions at temperatures between 25 and 650°C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. Dislocation loop nucleation was effectively suppressed in specimens irradiated with light ions, whereas the growth rate of dislocation loops was enhanced. The sensitivity to irradiation spectrum is attributed to ionization-induced diffusion. The interstitial migration energies in MgAl2O4 and A12O3 are estimated to be ≤0.4 eV and ≤0.8 eV, respectively for irradiation conditions where ionization-induced diffusion effects are expected to be negligible.

Effect of Irradiation Spectrum on the Microstructure of Ion-Irradiated A120O3

1994 ◽  
Vol 373 ◽  
Author(s):  
S. J. Zinkle
Keyword(s):  
Cross Section ◽  
Diffusion Processes ◽  
Ion Irradiation ◽  
Defect Cluster ◽  
The Other ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Light Ions ◽  
Alpha Alumina

AbstractPolycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe+ to 1 MeV H+ ions at 650°C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as I MeV H+ ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes.

Behavior of Metastable Te Donor Concentrations in Q-Switched Ruby Laser Annealed GaAs

1980 ◽  
Vol 1 ◽  
Author(s):  
P. Pianetta ◽  
J. Amano ◽  
G. Woolhouse ◽  
C. A. Stolte
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Ruby Laser ◽  
Structural Changes ◽  
The Other ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Half Angle ◽  
Laser Anneal

ABSTRACTThe thermal behavior of Te implanted, laser annealed GaAs was investigated by helium backscattering spectroscopy and transmission electron microscopy in order to correlate structural changes with the two stage reduction in the carrier concentration due to post laser anneal heating above 200°C. The activation energy for stage one which occurs in the range 200–400°C was determined to be approximately 1.3 eV. Post laser anneal heating at 450°C caused no observable structural changes. On the other hand, 850°C post laser anneal heating induced the formation of precipitates and dislocation loops as well as narrowing the channeling half-angle of Te by about 11%.

scholarly journals Amorphization and the Effect of Implanted Ions in Sic

1994 ◽  
Vol 373 ◽  
Author(s):  
L. L. Snead ◽  
S. J. Zinkle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Volume Change ◽  
Room Temperature ◽  
Threshold Dose ◽  
The Other ◽  
Ion Chemistry ◽  
Transmission Electron ◽  
Ion Species

AbstractThe effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400°C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also σ0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Climplanted region was only about 0.1 dpa. The volume change associated with amorphization was σ17&. No evidence for amorphization was obtained in specimens irradiated at 200 or 400°C.

Microstructures at the Interface Between a-Axis Oriented YBa2Cu3O7−x and NdGaO3(110) Substrate

1992 ◽  
Vol 275 ◽  
Author(s):  
Hiromi Takahashi ◽  
Norio Homma ◽  
Satoru Okayama ◽  
Tadataka Morishita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tensile Stress ◽  
Cross Section ◽  
Lattice Mismatch ◽  
The Other ◽  
Oriented Film ◽  
Transmission Electron ◽  
Small Lattice ◽  
Orientational Relationship

ABSTRACTThe interface between an a-axis oriented YBa2Cu3O7-x film and a NdGaO3(110) substrate has been investigated by cross-section transmission electron microscopy (TEM). The orientational relationship between the a-axis oriented film and substrate is YBa2Cu3O7-x[001] / NdGaO3[001]. This preferentially c-axis aligned direction of the YBa2Cu3O7-x film would be caused by a very small lattice mismatch (0.1%) between b(=a) lattice constant of YBa2Cu3O7-x and of the pseudo-cubic sub-lattices in NdGaO3 at a substrate temperature of 750°C. Two kinds of imperfections have been observed in the crystal lattice of YBa2Cu3O7-x near the interface; One is the deviation of YBa2Cu3O7-x [301] from NdGaO3 [111]. The other type is pair dislocations with a positive and negative Burgers vectors in the YBa2Cu3O7-x (103) planes. These two kinds of defects at the interface would be act to reduce the tensile stress within a distance of about l.lnm from the substrate interface.

A New Approach to the Demonstration of Oxidase-Localization Using Tannic Acid Or Catechin

1973 ◽  
Vol 31 ◽  
pp. 698-699
Author(s):  
V. Mizuhira ◽  
Y. Futaesaku
Keyword(s):  
Cross Section ◽  
Tannic Acid ◽  
Elastic Fiber ◽  
The Other ◽  
New Approach ◽  
Tissue Block ◽  
Active Reaction ◽  
The Cross

Previously we reported that tannic acid is a very effective fixative for proteins including polypeptides. Especially, in the cross section of microtubules, thirteen submits in A-tubule and eleven in B-tubule could be observed very clearly. An elastic fiber could be demonstrated very clearly, as an electron opaque, homogeneous fiber. However, tannic acid did not penetrate into the deep portion of the tissue-block. So we tried Catechin. This shows almost the same chemical natures as that of proteins, as tannic acid. Moreover, we thought that catechin should have two active-reaction sites, one is phenol,and the other is catechole. Catechole site should react with osmium, to make Os- black. Phenol-site should react with peroxidase existing perhydroxide.

Development of 200 kV Scanning-Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 410-411
Author(s):  
H. Koike ◽  
S. Sakurai ◽  
K. Ueno ◽  
M. Watanabe
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
The Other ◽  
Morphological Observation ◽  
Magnetic Domains ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Backscattered Electron ◽  
Increasing Demand

In recent years, there has been increasing demand for higher voltage SEMs, in the field of surface observation, especially that of magnetic domains, dislocations, and electron channeling patterns by backscattered electron microscopy. On the other hand, the resolution of the CTEM has now reached 1 ∼ 2Å, and several reports have recently been made on the observation of atom images, indicating that the ultimate goal of morphological observation has beem nearly achieved.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Electron Irradiation Effects in Polyoxymethylene Crystals Grown Inside Trioxane Crystals

1971 ◽  
Vol 29 ◽  
pp. 78-79
Author(s):  
J. P. Colson ◽  
D. H. Reneker
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Detailed Examination ◽  
The Other ◽  
Electron Micrograph ◽  
Irradiation Effects ◽  
Threefold Axis ◽  
Typical Sample ◽  
Polymer Crystals ◽  
Chain Axis

Polyoxymethylene (POM) crystals grow inside trioxane crystals which have been irradiated and heated to a temperature slightly below their melting point. Figure 1 shows a low magnification electron micrograph of a group of such POM crystals. Detailed examination at higher magnification showed that three distinct types of POM crystals grew in a typical sample. The three types of POM crystals were distinguished by the direction that the polymer chain axis in each crystal made with respect to the threefold axis of the trioxane crystal. These polyoxymethylene crystals were described previously.At low magnifications the three types of polymer crystals appeared as slender rods. One type had a hexagonal cross section and the other two types had rectangular cross sections, that is, they were ribbonlike.

A tilting high temperature gas reaction chamber for the JEM 7A T.E.M.

1978 ◽  
Vol 36 (1) ◽  
pp. 70-71
Author(s):  
Brian L. Rhoades
Keyword(s):  
Cross Section ◽  
Reaction Chamber ◽  
Objective Lens ◽  
Reduced Cross Section ◽  
Cross Sectional ◽  
Structural Investigations ◽  
Transmission Electron ◽  
Dynamic Experiments ◽  
Successful Design ◽  
Thermocouple Junction

A gas reaction chamber has been designed and constructed for the JEM 7A transmission electron microscope which is based on a notably successful design by Hashimoto et. al. but which provides specimen tilting facilities of ± 15° aboutany axis in the plane of the specimen.It has been difficult to provide tilting facilities on environmental chambers for 100 kV microscopes owing to the fundamental lack of available space within the objective lens and the scope of structural investigations possible during dynamic experiments has been limited with previous specimen chambers not possessing this facility.A cross sectional diagram of the specimen chamber is shown in figure 1. The specimen is placed on a platinum ribbon which is mounted on a mica ring of the type shown in figure 2. The ribbon is heated by direct current, and a thermocouple junction spot welded to the section of the ribbon of reduced cross section enables temperature measurement at the point where localised heating occurs.

Black-white contrast of dislocation loops

1978 ◽  
Vol 36 (1) ◽  
pp. 328-329
Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Loops ◽  
Major Premise ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Primary Means ◽  
Contrast Analysis ◽  
Dot Product ◽  
Imaging Conditions

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.

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