n-Type Diamond Growth by Phosphorus Doping

2007 ◽  
Vol 1039 ◽  
Author(s):  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Satoshi Yamasaki ◽  
Hideyo Okushi
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Light Emitting ◽  
Compensation Ratio ◽  
Phosphorus Doped

AbstractPhosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim
Keyword(s):  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Temperature Solution ◽  
Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Eu3+/Eu2+/Tb3+ co-activated single-phase Gd2O2S: A high-performance white light emitting phosphor for light emitting diode

2021 ◽  
Vol 11 (1) ◽  
pp. 54-62
Author(s):  
Jinpeng Xie ◽  
Bonan Liu ◽  
Qingtao Qong ◽  
Zhicheng Xu ◽  
Zhiqiang Jin ◽  
...  
Keyword(s):  
White Light ◽  
High Performance ◽  
Single Phase ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Energy Transfer Mechanism ◽  
Excitation Spectra ◽  
Phosphor Material ◽  
Light Emitting ◽  
Co Doped

In this work, we report Eu3+/Tb3+/Eu2+ co-activated Gd2O2 S as novel phosphor materials that can be effectively applied in the white-light emitting diode based on a near-UV chip with sensational performances. The luminescent properties and energy transfer mechanism have been thoroughly investigated. The as-prepared europium/terbium co-doped Gd2O2 S phosphors exhibit strong fluorescence with tunable color output under UV-vis light excitation. Furthermore, a high response to ultraviolet illumination of 398 nm wavelength was observed in the excitation spectra, indicating an excellent match with a light-emitting-diode chip in the dominant emissions. It is found that a tricolor (blue, green and red) emission band which results in a white light emission can be acquired when Eu3+, Eu2+ and Tb3+ ions are all co-doped into the single phase Gd2O2S, and an optimum ion doping level (10 at.% Eu and 0.7 at.% Tb) can effectively emit nearly pure white color photoluminescence with lifetime effectively tuned from 0.55 ms to 1.10 ms. The CIE (Commission International de I'Eclairage 1931 chromaticity) is X = 0.3507, Y = 0.3029. It is therefore expected that the newly found phosphor material with high-performance properties possess great potentials for the future advanced white LED applications.

Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Henryk Temkin
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Growth Mode ◽  
Light Emitting ◽  
Gas Source ◽  
Luminescence Efficiency ◽  
Short Period ◽  
Short Period Superlattices

AbstractWe report the results of two studies of the growth and physical properties of AlGaN-based short-period superlattices (SPSLs), each aimed at improving light emission. In the first experiment, we grow structures on bulk AlN substrates. We observe ∼ 3 times higher luminescence efficiency than identically grown structures on sapphire. In the second experiment, we grow structures on sapphire while controlling the growth mode. We observe a significant improvement in the room temperature cathodoluminescence efficiency (at least by factor of 10) of AlGaN quantum wells when the 3D growth mode is induced by reduced flux of ammonia over identically prepared structures grown in the 2D mode.

Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)Si

1995 ◽  
Vol 395 ◽  
Author(s):  
Hiroshi Amano ◽  
Shigetoshi Sota ◽  
Masaki Nishikawa ◽  
Masato Yoshida ◽  
Makoto Kawaguchi ◽  
...  
Keyword(s):  
Power Efficiency ◽  
Room Temperature ◽  
Optical Pumping ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Laser Action ◽  
Stimulated Emission ◽  
Threshold Power ◽  
Light Emitting ◽  
Double Heterostructures

ABSTRACTAlGaN/GalnN double heterostructures (DH) were fabricated by metalorganic vapor phase epitaxy on the (0001)Si 6H-SiC substrate. A cleaved edge shows a very flat surface with roughness on the order of one monolayer. Stimulated emission and laser action from the UV to blue region was observed by optical pumping at room temperature (RT). The threshold power density was 27KW/cm2 which is smaller than that of the same structure grown on a sapphire (0001) substrate by a factor of four. A AlGaN/GalnN DH UV light emitting diode, using undoped GalnN is fabricated. The power efficiency and spectra width of this LED is comparable or superior to that of an LED having the same structure but grown on sapphire.

High Efficiency Bulk Crystalline Silicon Light Emitting Diodes

2002 ◽  
Vol 744 ◽  
Author(s):  
Jianhua Zhao ◽  
Aihua Wang ◽  
Thorsten Trupke ◽  
Martin A. Green
Keyword(s):  
Power Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Light Emitting Diode ◽  
Coupled System ◽  
High Power Conversion Efficiency ◽  
Light Emitting

ABSTRACTA high power conversion efficiency above 1% from a bulk crystalline silicon (c-Si) light-emitting diode (LED) has been demonstrated at near room temperature. These devices are based on normally weak one- and two-phonon assisted sub-bandgap light emission processes. Their improved performance results from device designs that take advantage of enhanced light absorption by a light trapping scheme which was developed for high efficiency silicon solar cells, and from reducing scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve efficiency by a factor of ten, accounting for an improvement by factor of one hundred compared to baseline devices.Also demonstrated is a greatly improved band-edge light emission and detection using bulk c-Si diodes. A bulk c-Si LED is combined with a similar diode used as a detector that collects the light emitted with a high quantum collection efficiency of 33%, to produce a silicon to silicon optically coupled system that demonstrates 0.18% coupling quantum efficiency. The crystalline silicon LED demonstrates similarly high performance at very low power levels, where it has even higher power efficiency than a high efficiency GaAlAs LED.

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

scholarly journals Absorbance detector for high performance liquid chromatography based on a deep-UV light-emitting diode at 235 nm

2017 ◽  
Vol 1512 ◽  
pp. 143-146 ◽  
Author(s):  
João Flavio da Silveira Petruci ◽  
Michael G. Liebetanz ◽  
Arnaldo Alves Cardoso ◽  
Peter C. Hauser
Keyword(s):  
High Performance Liquid Chromatography ◽  
Liquid Chromatography ◽  
High Performance ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Deep Uv

scholarly journals Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong
Keyword(s):  
High Performance ◽  
Light Propagation ◽  
Light Emission ◽  
Review Article ◽  
Rapid Progress ◽  
Light Emitting ◽  
Materials Engineering ◽  
Perovskite Materials ◽  
Light Management ◽  
Photon Recycling

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.

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