Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Design and application of gradient annealing devices for the parallel thermal processing of Fe/Pt multilayers

2005 ◽  
Vol 894 ◽  
Author(s):  
Sigurd Thienhaus ◽  
Robert Hiergeist ◽  
Alan Savan ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Test System ◽  
First Results ◽  
Different Temperatures ◽  
Short Time ◽  
High Throughput Experiments ◽  
Temperature Time ◽  
Annealing Experiments

AbstractThis paper discusses the design and use of gradient annealing devices. Generally, it is intended to use such devices for the rapid optimization of thin film materials by simultaneous thermal processing at different temperatures. Furthermore, these devices are efficient for short- time annealing experiments. They are used in order to quickly vary the annealing parameters (temperature, time) from sample to sample. Here, nanoscale Fe/Pt multilayer precursor thin films for the fabrication of hard magnetic Fe-Pt thin films are investigated as a test system. First results prove the usefulness of the gradient annealing devices for high-throughput experiments.

Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films

2007 ◽  
Vol 22 (7) ◽  
pp. 1824-1833 ◽  
Author(s):  
M.L. Calzada ◽  
I. Bretos ◽  
R. Jiménez ◽  
H. Guillon ◽  
J. Ricote ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Lead Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Hysteresis Loops ◽  
Relaxor Ferroelectric ◽  
Silicon Substrates ◽  
Ferroelectric Hysteresis

(Pb1−xCax)TiO3 perovskite thin films with nominal compositions of (Pb0.76Ca.24)TiO3 (ferroelectric) and (Pb0.50Ca0.50)TiO3 (relaxor-ferroelectric) were prepared on silicon substrates at low temperatures compatible with those used in Si-technology. The technique used for the processing of these films was ultraviolet (UV) sol-gel photoannealing, using photo-sensitive precursor solutions and UV-assisted rapid thermal processing. The UV-irradiation and thermal treatment of the solution-derived films (gel films) were carried out in air or in oxygen. In both cases, the formation of the perovskite occurred at the same temperature, and this temperature increased as the Ca2+ content increased. Thus, full-perovskite films of (Pb0.76Ca.24)TiO3 were obtained at 723 K whereas those of (Pb0.50Ca0.50)TiO3 were formed at 773 K. Well-defined ferroelectric hysteresis loops were measured in the (Pb0.76Ca.24)TiO3 films, with values of remanent polarization of Pr ∼ 11 μC cm−2 and coercive fields for the films processed in oxygen lower than those of the films processed in air, Ec ∼ 164 and ∼226 kV.cm−1, respectively. These films showed a ferro-paraelectric transition at close temperatures of Tmax ∼ 605 K, although with higher values of the permittivity for the film processed in oxygen, k ∼ 567 at 10 kHz. The (Pb0.50Ca.50)TiO3 films had a diffuse ferro-paraelectric transition with a relaxor-like character, also with higher k values for the films prepared in oxygen, k ∼ 179 at Tmax ∼ 20 K. The possible use of these materials in silicon integrated multifunctional devices is discussed in this paper.

Growth of AZTSe thin films by rapid thermal processing and numerical simulation of p-CZTSe/n-AZTSe thin film heterojunction

2021 ◽  
Vol 127 (4) ◽  
Author(s):  
Rhishikesh Mahadev Patil ◽  
G. Hema Chandra ◽  
Y. P. Venkata Subbaiah ◽  
P. Prathap ◽  
Mukul Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Numerical Simulation ◽  
Thermal Processing ◽  
Rapid Thermal Processing

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Rapid thermal processing of zirconia thin films produced by the sol‐gel method

1991 ◽  
Vol 70 (4) ◽  
pp. 2348-2352 ◽  
Author(s):  
R. Pascual ◽  
M. Sayer ◽  
C. V. R. Vasant Kumar ◽  
Lichun Zou
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Gel Method ◽  
Sol Gel Method

Effects of doping and rapid thermal processing in Y doped CdO thin films

2019 ◽  
Vol 776 ◽  
pp. 259-265 ◽  
Author(s):  
Mengting Xie ◽  
Wei Zhu ◽  
Kin Man Yu ◽  
Zishu Zhu ◽  
Guanzhong Wang
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Cdo Thin Films

scholarly journals Rapid thermal processing of self-assembling block copolymer thin films

2013 ◽  
Vol 24 (31) ◽  
pp. 315601 ◽  
Author(s):  
F Ferrarese Lupi ◽  
T J Giammaria ◽  
M Ceresoli ◽  
G Seguini ◽  
K Sparnacci ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Self Assembling
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