X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Brock Alexander ◽  
Pehr E. Pehrsson ◽  
David Black ◽  
James E. Butler
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Film Deposition ◽  
Mosaic Structure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
High Pressure High Temperature

AbstractHomoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

Highly oriented diamond growth on positively biased Si substrates

2001 ◽  
Vol 16 (12) ◽  
pp. 3351-3354 ◽  
Author(s):  
Te-Fu Chang ◽  
Li Chang
Keyword(s):  
Electron Microscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron

Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.

Characterization of Stress and Mosaicity in Homoepitaxial Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
W. Brock Alexander ◽  
Paul H. Holloway ◽  
Patrick Doering ◽  
Robert Linares
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Natural Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hot Filament ◽  
Secondary Ion

ABSTRACTDiamond films were grown on (100) and (110) oriented natural diamond substrates by hot filament assisted chemical vapor deposition (HFCVD) to thicknesses of 7 to 100μm. Raman spectroscopy was used to measure tensile stresses of up to ∼2GPa for some of the (110) films. The development of stress was attributed to the incorporation of impurities (Re, Mo, and H). Impurity concentrations were greater at the interface than through the film thickness. Up to∼11% H and 50ppm Re were measured in the films with secondary ion mass spectrometry (SIMS). Homoepitaxial diamond films were further characterized using a seven crystal high resolution x-ray diffraction system. This new characterization tool allowed the separation of the effects of mosaicity from those of variation in lattice parameter.

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

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