Evaluation of Lpcvd Boron Nitride as a Low Dielectric Constant Material

1996 ◽  
Vol 427 ◽  
Author(s):  
R. A. Levy ◽  
M. Narayan ◽  
M. Z. Karim ◽  
S. T. Hsu
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Flow Rate ◽  
Chemical Properties ◽  
Low Dielectric Constant ◽  
Processing Conditions ◽  
Low Dielectric ◽  
Rate Ratios ◽  
And Chemical Properties ◽  
Deposition Conditions

AbstractThis study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Investigations Of The Chemical-Mechanical Polishing Of Polymer Films For ILD Applications

1995 ◽  
Vol 381 ◽  
Author(s):  
Jan. M. Neirynck ◽  
S. P. Murarka ◽  
R. J. Gutmann
Keyword(s):  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Chemical Properties ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Acidic Ph ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Damascene Process ◽  
And Chemical Properties

AbstractLow dielectric constant films are being investigated as the interlayer dielectric (ILD) in a multilevel interconnection scheme for advanced ULSI circuits. In such applications they will be subjected to planarization processes using chemical-mechanical polishing (CMP), either directly during dielectric planarization or indirectly in the final stages of metal patterning using the Damascene process. In this paper we report the results of our initial investigations of the CMP of three different polymers, all with dielectric constant in the range of 2.3 – 2.7 and with different mechanical and chemical properties. The CMP was carried out using alumina as the abrasive in basic and acidic pH slurries. The effect of preannealing the polymer on the CMP behavior was also investigated

Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor

2021 ◽  
Vol 21 (8) ◽  
pp. 4470-4476
Author(s):  
Yoonsoo Park ◽  
Hyuna Lim ◽  
Namwuk Baek ◽  
Seung Hun Park ◽  
Sungwoo Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Flow Rate ◽  
Chemical Structure ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Low Dielectric ◽  
Carrier Gas Flow

In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.), helium carrier gas flow rate was used to modulate the properties of the low-dielectric-constant SiCOH films. Octamethylcyclotetrasiloxane (OMCTS) precursor and helium were injected into the process chamber of PECVD. And then SiCOH films were deposited varying helium carrier gas flow rate. As helium carrier gas flow rate increased from 1500 to 5000 sccm, refractive indices were increased from 1.389 to 1.428 with enhancement of mechanical strength, i.e., increased hardness and elastic modulus from 1.7 and 9.1 GPa to 3.3 and 19.8 GPa, respectively. However, the relative dielectric constant (k) value was slightly increased from 2.72 to 2.97. Through analysis of Fourier transform infrared (FTIR) spectroscopy, the effects of the helium carrier gas flow rate on chemical structure, were investigated. It was thought that the increase in helium carrier gas flow rate could affect the density with changes of chemical structure and composition. In conclusion, regulation of helium carrier gas flow rate can effectively modulate k values and mechanical strength, which is needed for IMD material in semiconductor fabrication possess.

scholarly journals Anisotropic Thermally Conductive Perfluoroalkoxy Composite with Low Dielectric Constant Fabricated by Aligning Boron Nitride Nanosheets via Hot Pressing

Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1638 ◽  
Author(s):  
Xinru Zhang ◽  
Xinzhi Cai ◽  
Xiaoyu Xie ◽  
Changyu Pu ◽  
Xuanzuo Dong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Property ◽  
Boron Nitride ◽  
Thermal Management ◽  
Hot Pressing ◽  
Heat Dissipation ◽  
Low Dielectric Constant ◽  
Boron Nitride Nanosheets ◽  
Low Dielectric

Thermal management has become a critical challenge in electronics and portable devices. To address this issue, polymer composites with high thermal conductivity (TC) and low dielectric property are urgently needed. In this work, we fabricated perfluoroalkoxy (PFA) composite with high anisotropic TC and low dielectric constant by aligning boron nitride nanosheets (BNNs) via hot pressing. We characterized the thermal stability, microstructure, in-plane and through-plane TCs, heat dissipation capability, and dielectric property of the composites. The results indicate that the BNNs–PFA composites possessed good thermal stability. When the BNNs content was higher than 10 wt %, the BNNs were well layer aligned in the PFA matrix, and the composites showed obvious anisotropic TC. The in-plane TC and through-plane TCs of 30 wt % BNNs–PFA composite were 4.65 and 1.94 W m−1 K−1, respectively. By using the composite in thermal management of high-power LED, we found that alignment of BNNs in composite significantly improves the heat dissipation capability of composite. In addition, the composites exhibited a low dielectric property. This study shows that hot pressing is a facile and low-cost method to fabricate bulk composite with anisotropic TC, which has wide applications in electronic packaging.

Plasma Polymerization of Low Dielectric Constant Fluoro-Hydrocarbon Film

1998 ◽  
Vol 544 ◽  
Author(s):  
Wei William Lee ◽  
George Tyndall ◽  
Raymond Zehringer ◽  
Mark Crowder
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
High Vapor ◽  
Deposited Films ◽  
Deposition Conditions

AbstractLow dielectric constant fluoro-hydrocarbon polymer films were deposited using an electron cyclotron resonance (ECR) plasma source with pentafluorostyrene as a precursor. The pentafluorostyrene is a cyclic liquid monomer with relative high vapor pressure. The chemical structure of the deposited films were characterized by X-ray photoelectron spectroscopy, infrared spectroscopy and Rutherford backscattering spectroscopy. The structure of deposited films studies gave an insight of the fluorohydrocarbon polymer formation regarding to deposition conditions. The dielectric constant of the film was found in the range of 2.2 to 2.4. The influence of deposition conditions on chemical, physical and electrical properties of the resulting films were evaluated.

Deposition of SiO2:F:C Films With Low Dielectric Constant and With High Resistance to Annealing

1999 ◽  
Vol 606 ◽  
Author(s):  
J. Lubguban ◽  
Y. Kurata ◽  
T. Inokuma ◽  
S. Hasegawa
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
High Resistance ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Rf Power ◽  
Low Dielectric

AbstractSiO2:F:C films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique from SiH4/O2/CF4/CH4 mixtures. Increasing amount of carbon were introduced to the SiO2:F films by changing the CH4 flow rate, [CH4], while keeping constant other conditions such as rf power and deposition temperature, TD. It was found that the addition of CH4 decreases the dielectric constant, k; from 3.36 for [CH4] = 0 sccm to 2.95 for [CH4] = 8 sccm. For the [CH4] condition where the film has a lowest k, the deposition temperature and rf power were optimized by depositing films using different values of TD and rf power The k for films in the new series as well as the stress and water absorption was investigated. Results show that the dielectric constant further decrease up to 2.85. Some films were then annealed from 400 - 800 °C and it was found that the k for films deposited with higher [CH4] has a better stability with respect to annealing up to a temperature of 600 °C.

Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 33-38 ◽  
Author(s):  
Nigel P. Hacker
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

Plasma deposition of low dielectric constant (k=2.2∼2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

2004 ◽  
Vol 96 (11) ◽  
pp. 6679-6684 ◽  
Author(s):  
Jun Liu ◽  
Kian Ping Loh ◽  
Ming Lin ◽  
Yong Lim Foo ◽  
Wei De Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Plasma Deposition ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Nanoporous Films
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