Correlation Between the Standard Deviation of Sheet Resistance and the Temperature of Rapid Thermal Annealing

1996 ◽  
Vol 429 ◽  
Author(s):  
X. W. Lin ◽  
D. Pramanik
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Standard Deviation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Dependent ◽  
The Mean ◽  
Specific Temperature ◽  
Substrate Doping

AbstractRapid thermal annealing (RTA) induced reactions between Ti thin films and Si wafers were characterized by sheet resistance measurements. It was found that the standard deviation a of the measurements is RTA-temperature dependent, and strongly correlates with the mean sheet resistance R. A specific temperature was identified, corresponding to a sharp σ peak in the temperature regime associated with the C49-C54 TiSi2 phase transition. This temperature is characteristic of materials parameters such as Ti thickness and substrate doping species, and can be used to accurately monitor or compare the calibration of RTA systems.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid Thermal Transformation of A-15 Crystal Structure Metallic Thin Films

1995 ◽  
Vol 387 ◽  
Author(s):  
M. J. O'Keefe ◽  
C. L. Cerny
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Thermal Transformation ◽  
The Body ◽  
Cubic Phase ◽  
Body Centered Cubic ◽  
Body Center Cubic

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.

STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO3 THIN FILMS BY RAPID THERMAL ANNEALING

2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Heating Rate ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rapid Heating ◽  
Structural Characteristics ◽  
High Heating Rate ◽  
Duration Time ◽  
Temperature Heating

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.

Rapid thermal annealing of YBaCuO thin films sputtered on substrates

1990 ◽  
Vol 164-165 ◽  
pp. 359-365 ◽  
Author(s):  
J. Baixeras ◽  
F. Carrie ◽  
F.Hosseini Teherani ◽  
A. Kreisler
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

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