Characterization of SrxBa1−xTiO3 Pulsed Laser Deposition Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
W Pérez ◽  
Sampriti Sen ◽  
J. Cordero ◽  
E. Ching-Prado ◽  
R.S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Sem Analysis ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Concentration ◽  
X Ray ◽  
Ir Reflection ◽  
Frequency Position ◽  
Ft Ir

AbstractThin films of SrTiO3 (STO) and SrxBa1−xTiO3 (SBT) with x = 0.35, 0.5, 0.9, and prepared by excimer laser deposition on LaAlO3 and MgO were studied. SEM analysis indicates that the surfaces of these films are smooth with isolated pores, except the SBT(x=0.5)/LaAlO3 sample, where a high concentration of large pores was found. X-ray diffraction (XRD) results show well oriented films. External FT-IR reflection studies reveals a band around 500 cm−x, which shows a significant frequency shift with increasing component concentration. Also, this IR-reflectivity band presents no changes between the SBT(x=0.9)/LaALO3 sample annealed at 750°C and the same film annealed at 850°C. On other hand, the STO/LaAlO3 and STO/MgO films show differences in frequency position of this reflectivity band. Raman spectra of the SBT sample with x ≥ 0.35 show broad bands associated with the BaTiO3 (BTO) material. However, all the phonons bands are broader than those in BTO, in particular the band around 309 cm−. Raman results suggest that the spectrum is a consequence of a breakdown in the translational symmetry due to defects. Raman scattering also indicates a similarity between SBT(x=0.9) at 750°C and that at 850°C. Micro-Raman and EDX analysis show that STO/MgO and SBT(x=0.35)/LaAlO3 films are close to the expected stoichiometry, while STO/LaAlO3 and SBT(x=0.9) films present deficiencies of titanium and oxygen.

The Effects of Substrate-Induced Strains on the Charge-Ordering Transition in Nd0.5Sr0.5MnO3 Thin Films

1999 ◽  
Vol 602 ◽  
Author(s):  
W. Prellier ◽  
Amlan Biswas ◽  
M. Rajeswari ◽  
T. Venkatesan ◽  
R.L. Greene
Keyword(s):  
Thin Films ◽  
Variable Temperature ◽  
Charge Ordering ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Metallic Behavior ◽  
X Ray ◽  
Post Annealing ◽  
Ordering Transition

AbstractWe report the growth and characterization of Nd0.5Sr0.5MnO3 thin films deposited by the Pulsed Laser Deposition (PLD) technique on [100]-oriented LaAlO3 substrates. X-ray diffraction (XRD) studies show that the films are [101]-oriented, with a strained and quasi-relaxed component, the latter increasing with film thickness. A post-annealing under oxygen leads to a quasi-relaxed film with a metallic behavior. We also observe that transport properties are strongly dependent on the thickness of the films. Variable temperature XRD down to 100 K suggests that this is caused by substrate-induced strain on the films.

SYNTHESIS AND CHARACTERIZATION OF HG-BASED SUPERCONDUCTING THIN FILMS PRODUCED STARTING FROM LASER-DEPOSITED PRECURSORS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2731-2736 ◽  
Author(s):  
M. BINDI ◽  
F. FUSO ◽  
N. PUCCINI ◽  
E. ARIMONDO ◽  
A. TAMPIERI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Precursor Film ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopy Analysis ◽  
Zero Resistance ◽  
Microscopy Analysis

Correctly c-axis oriented HgBa 2 CaCu 2 O 6+δ thin films have been produced on (100) MgO single crystal substrates and characterized. Pulsed laser deposition has been exploited to deposit Hg-free Re-doped precursor which then underwent synthesis in evacuated and sealed quartz tubes. X-ray diffraction pattern of the precursor target shows the expected composition of oxides. Scanning electron microscopy analysis have been performed on the surface of the precursor film. Hg-1212 films have been analyzed by θ-2θ Bragg-Brentano X-ray diffractometry. The patterns show little contributions in composition of Hg-1223 phase. The films exhibit a transition temperature >120 K with zero-resistance at around 115 K.

Influence of Sr-Doping on the Structure of LaCoO3 Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 231 ◽  
pp. 19-24 ◽  
Author(s):  
Agnieszka Kopia ◽  
Łukasz Cieniek ◽  
Kazimierz Kowalski ◽  
Jan Kusiński
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Morphology

The aim of the research was to investigate the influence of strontium on the structure thin films La1-x SrxCoO3 (x=0; 0.1, 0.2). The LaCoO3 and LaCoO3 doped by Sr films were grown by pulsed laser deposition (PLD) on Si [100] substrate using an Excimer KrF (= 248 nm). To characterize the structure and morphology of the thin films were used the SEM, AFM and XRD methods. X-Ray Diffraction analysis showed only LaCoO3 phase in the thin film not doped andLa0.1Sr0.9CoO3 and La0.2Sr0.8CoO3 phases in thin films doped by Sr. The crystallites size, calculated by Williamson-Hall plots, was smaller for films doped by Sr. The surface of the thin films was free from the drops. SEM analysis showed change of the shape of thin films as a result of doping by Sr. Highly developed layer surface was observed using the AFM microscope for thin films doped by Sr.

scholarly journals Perovskite La1-xSrxFeO3 Thin Films Deposited by Laser Ablation Process

2016 ◽  
Vol 61 (2) ◽  
pp. 1063-1067 ◽  
Author(s):  
A. Cyza ◽  
Ł. Cieniek ◽  
A. Kopia
Keyword(s):  
Thin Films ◽  
Sem Analysis ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ablation Process ◽  
X Ray ◽  
Structure And Morphology ◽  
Laser Ablation Process ◽  
Developed Surface ◽  
The Mean

Abstract The aim of the research was to investigate the influence of strontium on the structure of thin films La1-xSrxFeO3 (x = 0; 0,1; 0,2). The LaFeO3 and Sr-doped LaFeO3 films were produced by pulsed laser deposition (PLD) on Si (100) substrate using the Nd-YAG (λ = 266 nm) laser. SEM, AFM and XRD methods were used to characterize the structure and morphology of the thin films. X-Ray Diffraction analysis showed only the LaFeO3 phase in the undoped thin film and the La0.9Sr0.1O3 and La0.8Sr0.2O3 phases in thin films doped by Sr. The mean crystallite size, calculated by Williamson-Hall method, was smaller (of the order of 18 nm) in films doped by Sr. SEM analysis showed small droplets in thin films doped by Sr. Highly developed surface layer was observed using the AFM microscope for thin films doped by Sr.

One Step Synthesis and Characterization of Zirconia-Graphene Composites

2012 ◽  
Vol 600 ◽  
pp. 174-177 ◽  
Author(s):  
Jian Fei Xia ◽  
Zong Hua Wang ◽  
Yan Zhi Xia ◽  
Fei Fei Zhang ◽  
Fu Qiang Zhu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Composite ◽  
Transmission Electron ◽  
One Step ◽  
Ft Ir ◽  
Xrd Techniques

Zirconia-graphene composite (ZrO2-G) has been successfully synthesized via decomposition of ZrOCl2•6H2O in a water-isopropanol system with dispersed graphene oxide (GO) utilizing Na2S as a precursor could enable the occurrence of the deposition of Zr4+ and the deoxygenation of GO at the same time. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) techniques were used to characterize the samples. It was found that graphene were fully coated with ZrO2, and the ZrO2 existing in tetragonal phase, which resulted in the formation of two-dimensional composite.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Isolation and characterization of lignocellulosic fiber from jute bast by the organic solvent degumming system: an alkali-free method

2021 ◽  
pp. 004051752110154
Author(s):  
Zhihui Qin ◽  
Shuyuan Zhao ◽  
Liu Liu ◽  
Zhaohe Shi ◽  
Longdi Cheng ◽  
...  
Keyword(s):  
National Standards ◽  
X Ray Diffraction ◽  
High Concentration ◽  
X Ray ◽  
Lignocellulosic Fibers ◽  
Lignocellulosic Fiber ◽  
Isolation And Characterization ◽  
Alkali Consumption ◽  
Scanning Electron

Degumming is the dominant method for insolating lignocellulosic fibers in textile applications. Traditional alkaline degumming (TAL), as a common method, requires a high-concentration alkali and has been a severe challenge to the environment. In the research reported here, the possibility of innovative jute degumming by organic solvents 1-2 propylene glycol and a combination of additive green oxygen (GO-OS) was studied. The results revealed that fibers could be extracted by this system (under condition of 0.9% GO-OS, 180°C, 120 min), and obtained fibers with higher breaking tenacity (7.1 cN/dtex), yield (65.7%), breaking elongation (2.87%) and residual gum (11.7%), which all meet the requirement of the relevant Chinese Textile National Standards. Notably, the required reaction time (120 min) of the GO-OS system was 180 min shorter than that of the TAL method. Furthermore, the modifications introduced by the degumming effect on physicochemical aspects were characterized and confirmed by Fourier transform infrared spectroscopy, scanning electron microscopy and X-ray diffraction. This study provides a promising degumming method for separating jute lignocellulose without acid and alkali consumption.

Synthesis, Characterization and Optical Properties of PLA / P3HT Blends Thin Films

2021 ◽  
Vol 19 (5) ◽  
pp. 132-138
Author(s):  
Maan Abd-Alameer Salih ◽  
Q.S. Kareem ◽  
Mohammed Hadi Shinen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Ring Opening ◽  
Energy Gap ◽  
Ring Opening Polymerization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductivity Increase ◽  
Ft Ir

In this exploration Poly lactic corrosive (PLA) was orchestrated the ring-opening polymerization Poly lactic corrosive (PLA) blended with poly(3-hexylthiophene) (P3HT) which prepared by solution. Blends thin films Synthesis by spin coating technique and using Tetrahydrofuran (THF) as solvent. PLA powder was 'characterized by' 'X-ray' 'diffraction', '(FT-IR)'. pure Optical properties (PLA), (PLA)/P3HT blends thin films with different percentage of P3HT (0, 1, 2, and 3) wt% were investigated using UV-VS spectroscopy The results showed that the absorption, absorption coefficient, extinction coefficient and conductivity increase with increasing the rate of deformation P3HT, The energy gap decreases with increasing deformation.

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