Optical Properties and Surface Roughness of Ion Implanted Single Crystal Sapphire

1996 ◽  
Vol 438 ◽  
Author(s):  
J. D. Demaree ◽  
S. R. Kirkpatrick ◽  
A. R. Kirkpatrick ◽  
J. K. Hirvonen
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Visible Spectrum ◽  
Optical Transmittance ◽  
Optical Quality ◽  
Implantation Temperature ◽  
Single Crystal Sapphire

AbstractIt has been shown that metal ion implantation can harden single crystal sapphire and introduce compressive stresses at the surface, which may lead to an increase in the fracture toughness of the material. This may significantly affect the usefulness of this material as a shatter-resistant optical window in missile applications. In this study, we have examined the extent to which sapphire can be implanted without severely degrading its optical quality by ion beam defect production. Optically-polished single-crystal c-axis sapphire was implanted with 150 keV Cr+, Ti+, and Si+ ions to doses of 0.3 – 3.0 × 1017 ions/cm2 at both room temperature and at 800 °C, to measure the optical effect of in situ annealing. Rutherford backscattering spectrometry showed evidence of implant species migration only in the case of Ti implanted at high temperatures; all other implant profiles were Gaussian. The optical transmittance of the sapphire was examined using visible spectrum transmission and Fourier Transform Infrared Spectroscopy. Si implantation resulted in a 10 % reduction in infrared transmittance at the highest ion dose, but this was reduced to 6 % when the implantation was done at high temperature. Both Cr and Ti implantation reduced the sapphire IR transmittance (by 16 % and 42 %, respectively) , but the effect of implantation temperature on transmittance was different. High temperature during implantation increased the transmittance of Cr-implanted samples, but further darkened Ti-implanted samples. Photon tunneling and atomic force microscopy showed that both Ti and Cr implantation roughened the surface of the material.

scholarly journals Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2871
Author(s):  
Qiuling Wen ◽  
Xinyu Wei ◽  
Feng Jiang ◽  
Jing Lu ◽  
Xipeng Xu
Keyword(s):  
Single Crystal ◽  
Surface Quality ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Removal Rate ◽  
Ion Beam ◽  
Crystal Orientations ◽  
Aluminum Ions ◽  
Single Crystal Sapphire

Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.

Formation of dense and aligned planar arrangements of Pb nanoparticles at silica/silicon interfaces

2011 ◽  
Vol 1308 ◽  
Author(s):  
Flavia P. Luce ◽  
Felipe Kremer ◽  
Dario F. Sanchez ◽  
Zacarias E. Fabrim ◽  
Shay Reboh ◽  
...  
Keyword(s):  
High Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Aging Treatment ◽  
High Temperature Short Time ◽  
Transmission Electron ◽  
Long Time ◽  
Size Dispersion ◽  
Short Time ◽  
Silicon Interface

ABSTRACTThe ion beam synthesis of Pb nanoparticles (NPs) in silica/silicon films is studied in terms of the combination of a two-step annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time furnace annealing. The samples are analyzed through Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. The aging process leads to the suppression of the classical homogeneous nucleation of metallic Pb NPs in the silica, thus promoting Pb redistribution during the high temperature annealing. This causes the formation of dense bi-dimensional NP arrays located at the silica-silicon interface, presenting small size dispersion.

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

An Ultrahigh-Temperature, Single-Crystal Texture Camera Diffractometer*

1964 ◽  
Vol 8 ◽  
pp. 86-90
Author(s):  
Robert L. Prickett
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Ion Beam ◽  
Sample Surface ◽  
Refractory Materials ◽  
X Ray ◽  
First Order ◽  
Crystal Texture ◽  
Ultrahigh Temperature ◽  
Electronic Detector

AbstractA single-crystal high-temperature X-ray camera has been built with permissible operating temperatures of 2500°C. The camera is constructed to rest upon a Siemens horizontal diffractometer and may be used with either an external electronic detector or with film. The sample is supported on an externally adjustable goniometer head and is heated from the back by an ion beam. Controlled oscillation allows rotation photographs to be obtained from the sample surface not touched by the ion stream. Temperature is controlled by a thermocouple supporting the sample, the thermocouple being an intrinsic part of the goniometer. As a design limit, zero and first order layer lines with iron Kα. radiation on specimens with lattice parameters of 2.6 Å or larger may be recorded. Copper, cobalt, and molybdenum radiation allow even greater latitude. Types of samples that may be studied include powder (pellet), single crystal, wire, or rod. The camera serves equally well for single-crystal, texture, or powder studies on refractory materials.

scholarly journals Single-crystal Sapphire Based Optical Polarimetric Sensor for High Temperature Measurement

Sensors ◽  
2006 ◽  
Vol 6 (8) ◽  
pp. 823-834 ◽  
Author(s):  
Yibing Zhang ◽  
Gary Pickrell ◽  
Bing Qi ◽  
Ahmad Safaai-Jazi ◽  
Anbo Wang
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Temperature Measurement ◽  
High Temperature Measurement ◽  
Single Crystal Sapphire

Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

1974 ◽  
Vol 32 ◽  
pp. 468-469
Author(s):  
J. L. Kenty ◽  
R. E. Johnson
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire ◽  
Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

Cross-sectionnal Electron Microscopy investigation of silicon amorphisation during high temperature zinc-ion bombardment

1990 ◽  
Vol 48 (4) ◽  
pp. 656-657
Author(s):  
J. Faure ◽  
S. Simov ◽  
G. Balossier ◽  
L.M. Bharadwaj ◽  
A. Claverie ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Zinc Ion ◽  
Device Fabrication ◽  
Strongly Correlated ◽  
Structural Modifications ◽  
Implantation Temperature ◽  
Microscopy Investigation

In silicon technology, the use of zinc as a dopant reveals a great interest in optoelectronic device fabrication, such as photoresistors, light amplifiers, photodiodes etc. Recently, zinc implantation has received a new attention in thermal oxidation of silicon. Oxidation kinetics are strongly correlated to zinc segregation at the oxide-silicon interface and to the nature of the ion induced damage which is stable at the implantation temperature. We used cross-sectionnal electron microscopy (XTEM) for the characterisation of the structural modifications induced in a monocrystalline silicon substrate during high temperature Zn+implantation. During irradiation, silicon wafers (111 oriented) were heated to 110°C by use of a resistively heated copper block, while the incident ion beam had an energy of 120keV and a current density less than 3μA.cm-2.Figure 1 presents the effect of Zn+ implantation associated with a 1014 ions.cm-2 implanted dose. This 220 DF image reveals, in black, a buried noncrystalline layer lying from about 30 to 85nm from the arrowed silicon surface.

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