Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

scholarly journals Ion Implantation and Annealing of Oxides

1986 ◽  
Vol 74 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
P. S. Sklad ◽  
C. J. Mchargue ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Liquid Nitrogen ◽  
Amorphous Phase ◽  
Room Temperature ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Pure Material ◽  
Near Surface ◽  
Implantation Damage ◽  
Crystalline Oxides

AbstractIon implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Properties of Gallium Disorder and Gold Implants in GaN

2000 ◽  
Vol 647 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
V. Shutthanandan
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Surface Region ◽  
Intermediate Stage ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
The Mean ◽  
Fluence Range

AbstractEpitaxial single-crystal GaN films on sapphire were implanted 60° off the <0001> surface normal with 1 MeV Au2+ or 3 MeV Au3+ over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He+ Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near- surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. During the thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au3+ indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm2) applied at 300 K.

Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

scholarly journals Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

2021 ◽  
Vol 7 (2) ◽  
Author(s):  
Arti Yadav ◽  
Noushin Moharrami ◽  
Steve Bull
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Water Layer ◽  
Adsorbed Water ◽  
Sample Surface ◽  
Amorphous Layer ◽  
Near Surface ◽  
Sapphire Surface ◽  
Carbon Impurities ◽  
High Doses

AbstractModification of the chemomechanical behaviour of the surface of sapphire by ion implantation to improve its near-surface mechanical properties has been investigated. 300 keV Ti+ ions at various doses were implanted and the concentration and damage profiles characterised using Rutherford Backscattering (RBS). At high doses (≥ 3 × 1016 Ti+ cm−2), a surface amorphous layer is formed due to implantation-induced damage. Nanoindentation was used to determine the hardness behaviour of the ion-implanted layer. Hardness increases at low implantation doses, associated with implantation-induced damage, but it is also observed that chemomechanical softening of the surface is reduced due to the removal of adsorbed water. In situ Raman scattering measurements demonstrate this removal at low doses and the re-establishment of the adsorbed water layer at high doses. The adsorption process is changed due to the introduction of carbon into the sapphire surface during implantation. For the optimum-implanted dose, the water readsorption does not recur even several years after the implantation treatment was first carried out. The loss of water adsorption is related to the formation of a non-polar carbonaceous layer on the sapphire surface by cracking of back-streamed diffusion pump oil deposited on the sample surface by inelastic collisions with the ion beam. Based on this study, it is concluded that ion implantation with an appropriate ion species and dose can control the chemomechanical effect and improve the hardness of ceramics, such as sapphire.

Flame Annealing of Ion Implanted Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
R. T. Young
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Triangular Grid ◽  
Silicon Substrates ◽  
Dislocation Loops ◽  
Implantation Damage ◽  
Hydrogen Flame ◽  
Van Der Pauw ◽  
Flame Annealing

ABSTRACTWe have investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200°C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a “defect-free” annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening,i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formations of 90° dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20–1.25 and low reverse bias currents.

scholarly journals Ion Implantation and Annealing of SrTiO3 and CaTiO3

1987 ◽  
Vol 93 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
J. Rankin ◽  
M. J. Aziz
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Single Crystal Substrate ◽  
Recrystallization Process ◽  
Near Surface ◽  
Ion Channeling ◽  
Implantation Damage ◽  
Crystal Substrate ◽  
Kinetics Of

ABSTRACTIon implantation damage and thermal annealing results are presented for single crystals of SrTiO3 and CaTiO3. The near-surface region of both of these materials can be made amorphous by low doses (∼1015/cm2 ) of heavy ions (Pb at 540 keV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.

Ion Milling Damage in InP and GaAs

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Perley
Keyword(s):  
Incidence Angle ◽  
Schottky Diodes ◽  
Surface Damage ◽  
Amorphous Layer ◽  
Extended Defects ◽  
Ion Milling ◽  
Initial Current ◽  
Near Surface ◽  
Current Voltage ◽  
Ion Energies

ABSTRACTNear-surface damage created by Ar+ ion milling in InP and GaAs was characterized by capacitance-voltage, current-voltage, photoluminescence, ion channeling and transmission electron microscopy. We find no evidence of amorphous layer formation in either material even for Ar+ ion energies of 800eV. Low ion energies (200eV) create thin (≤100 Å) damaged regions which can be removed by annealing at 500°C. Higher ion energies (≤500 eV) create more thermally stable damaged layers which actually show higher backscattering yields after 500°C annealing. Heating to 800°C is required to restore the near-surface crystallinity, although a layer of extended defects forms in GaAs after such a treatment. No dislocations are observed in InP after this type of annealing. The electrical characteristics of both InP and GaAs after ion milling at ≥500 eV cannot be restored by annealing, and it is necessary to remove the damaged surface by wet chemical etching. For the same Ar+ ion energies the damaged layers are deeper for InP than for GaAs-after 500 eV ion milling at 45° incidence angle, removal of ∼485 Å and ∼650 Å from GaAs and InP respectively restores the initial current-voltage charaeteristics of simple Schottky diodes.

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