IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

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Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

MRS Proceedings ◽

10.1557/proc-438-83 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 1

Author(s):

S. Tian ◽

M. Morris ◽

S. J. Morris ◽

B. Obradovic ◽

A. F. Tasch

Keyword(s):

Ion Implantation ◽

Damage Evolution ◽

Damage Model ◽

Amorphous Layer ◽

High Dose ◽

Defect Production ◽

Implantation Damage ◽

Wide Range ◽

Physically Based ◽

First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

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Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial Crystallization

MRS Proceedings ◽

10.1557/proc-316-771 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

Naoto Kobayashi ◽

Masataka Hasegawa ◽

J.R. Phillips ◽

Nobuyuki Hayashi ◽

Hisao Tanoue ◽

...

Keyword(s):

Ion Implantation ◽

Ion Beam ◽

Synthesis Method ◽

Amorphous Layer ◽

Sige Layer ◽

High Energy ◽

High Dose ◽

Surface Layers ◽

Epitaxial Crystallization ◽

Induced Crystallization

ABSTRACTFabrication of Si1-xGex and Si-1-x-yGexCy layers on Si(100) by high-dose ion implantation of 72Ge ions without and with 12C ions and subsequent high-energy and low-energy ion-beam-induced epitaxial crystallization (IBIEC) has been investigated. Structural properties of the surface layers were observed by RBS-channeling technique. Si(100) wafers were implanted with 150keV and 80keV Ge ions at room temperature so as to produce a peak concentration of Ge amounting to approximately 2 and 14 at.%, respectively. C ions were additionally implanted to a fluence of 10% of Ge concentration for the SiGeC samples. IBΓEC experiments performed with 400keV 18Ar ion bombardments have induced crystallization of the amorphous layers of SiGe and SiGeC on Si up to the surface at 400°C for both samples with low Ge concentration (2%) and high Ge concentration (14%). IBIEC using 72Ge ions with energies whose projected ranges are within the amorphous layer was alternatively performed for SiGe layer on Si. Bombardments of 140keV and 40keV Ge ions at 400°C have induced crystallization up to the surface with a slight disorder in the grown layer. Present experimental results suggest a novel ion beam synthesis method of fabrication of SiGe (SiGeC) on Si at low temperatures.

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176010 ◽

1990 ◽

Vol 48 (4) ◽

pp. 576-577

Author(s):

A. De Veirman ◽

J. Van Landuyt ◽

K.J. Reeson ◽

R. Gwilliam ◽

C. Jeynes ◽

...

Keyword(s):

Ion Implantation ◽

Annealing Treatment ◽

Silicon On Insulator ◽

High Dose ◽

Nitrogen Flow ◽

Cobalt Disilicide ◽

Transmission Electron ◽

Beam Heating ◽

Co Concentration ◽

Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

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A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

MRS Proceedings ◽

10.1557/proc-27-187 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

J.C. Soares ◽

A.A. Melo ◽

M.F. DA Silva ◽

E.J. Alves ◽

K. Freitag ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Low Dose ◽

Correlation Method ◽

High Dose ◽

Tetrahedral Sites ◽

Time Differential ◽

Before And After ◽

Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

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High-dose Pt ion implantation into stainless steel through a sacrificial carbon layer: carbon mixing effects

Surface and Coatings Technology ◽

10.1016/0257-8972(94)90038-8 ◽

1994 ◽

Vol 66 (1-3) ◽

pp. 398-402 ◽

Cited By ~ 3

Author(s):

Lynann Clapham ◽

J.L. Whitton ◽

J.A. Jackman ◽

M.C. Ridgway

Keyword(s):

Stainless Steel ◽

Ion Implantation ◽

Carbon Layer ◽

High Dose ◽

Mixing Effects

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Carbon onions formation by high-dose carbon ion implantation into copper and silver

Surface and Coatings Technology ◽

10.1016/s0257-8972(00)00655-1 ◽

2000 ◽

Vol 128-129 ◽

pp. 43-50 ◽

Cited By ~ 56

Author(s):

T Cabioc’h ◽

M Jaouen ◽

E Thune ◽

P Guérin ◽

C Fayoux ◽

...

Keyword(s):

Ion Implantation ◽

High Dose ◽

Carbon Ion ◽

Carbon Onions

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Materials characterization and effect of purity and ion implantation on the friction and wear of sublimed fullerene films

Journal of Materials Research ◽

10.1557/jmr.1994.2823 ◽

1994 ◽

Vol 9 (11) ◽

pp. 2823-2838 ◽

Cited By ~ 42

Author(s):

B.K. Gupta ◽

Bharat Bhushan ◽

C. Capp ◽

J.V. Coe

Keyword(s):

Fourier Transform ◽

Elastic Modulus ◽

Ion Implantation ◽

Coefficient Of Friction ◽

Friction And Wear ◽

Steel Ball ◽

Scanning Tunneling ◽

High Dose ◽

Wear Life ◽

Plastic Deformation Behavior

In previous studies, sublimed C60-rich fullerene films on silicon, when slid against a 52100 steel ball under dry conditions, have exhibited low coefficient of friction (∼0.12). Films with different purities can be produced by sublimation at different substrate temperatures. In this paper, effects of purity of fullerene films and ion implantation of the films with Ar ions on the friction and wear properties of sublimed fullerene films are reported. C60-rich films (called here films with high purity) exhibit low macroscale friction. An increased amount of C70 and impurities in the fullerene film determined using Raman and Fourier transform infrared (FTIR), increases its coefficient of friction. Microscale friction measurements using friction force microscopy also exhibited similar trends. Low coefficient of friction of sublimed C60-rich films on silicon is probably due to the formation of a tenacious transfer film of C60 molecules on the mating 52100 steel ball surface. Based on scanning tunneling microscopy (STM), transmission electron microscopy (TEM), and high resolution TEM (HRTEM), we found that fullerene films primarily consisted of C60 molecules in a fcc lattice structure. Nanoindenter was used to measure hardness and elastic modulus of the as-deposited films. Ion-implantation with 1 × 1016 Ar+ cm−2 reduced macroscale friction down to about 0.10 from 0.12 with an increase in wear life by a factor of 4; however, doses of 5 × 1016 ions cm−2 gave three times higher friction and poorer wear life; higher doses disintegrated the C60 molecules. Based on STM, TEM, Raman, FTIR, and laser desorption Fourier-transform ion cyclotron resonance mass spectrometer (LD/FT/ICR) studies, we found that the ion implantation with a dose of 1 × 1016 Ar+ cm−2 resulted in smoothening of the fullerene film surface probably by compacting clusters, but without disintegrating the C60 molecules. However, a high dose of 5 × 1016 Ar+ cm−2 damaged the C60 molecules, converting it to an amorphous carbon. Nanoindentation studies show that ion implantation with a dose of 1 × 1016 Ar+ cm−2 resulted in an increase in the hardness from about 1.2 to 4.0 GPa and in elastic modulus from about 70 to 75 GPa and modified the elastic-plastic deformation behavior.

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Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

MRS Proceedings ◽

10.1557/proc-1-407 ◽

1980 ◽

Vol 1 ◽

Author(s):

S.W. Chiang ◽

Y.S. Liu ◽

R.F. Reihl

Keyword(s):

Ion Implantation ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

A Cell ◽

Ft Ir ◽

Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

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