Specific Effects of the Displacement Cascades on the Kinetics of Precipitation of Copper in Iron

1996 ◽  
Vol 439 ◽  
Author(s):  
A. Barbu ◽  
D. Lesueur ◽  
J. Dural
Keyword(s):  
Point Defects ◽  
Energy Deposition ◽  
Electronic Excitations ◽  
Precipitation Kinetics ◽  
Irradiation Effects ◽  
Copper Precipitation ◽  
Phonon Component ◽  
Specific Effects ◽  
Kinetics Of

AbstactIn order to probe the possibility of simulating irradiation effects with swift ions and obtaining some insight about the production rate of freely migrating defects in iron, we studied the kinetics of copper precipitation in FeCu1.34at% irradiated at 300°C with 202 MeV O- ions and 2.5 MeV electrons. The precipitation kinetics are studied in situ (GANIL for O- ions and Van de Graaff for electrons) by measuring the electrical resistivity at 30°C to reduce the phonon component. We found that, in both cases, the resistivity versus fluence (in dpa) curves are identical. This would imply either that the relatively small cascades induced by 202 MeV O- ions (compared with those produced by neutrons) are very efficient in producing freely migrating point defects or that the energy deposition by electronic excitations plays an important role. We show that this latter possibility is not relevant for 202 MeV O18 ions.

The Influence of Mg and Ag on the Precipitation Kinetics and the Formation of the T1 Phase in Al-Cu-Li Alloys

2014 ◽  
Vol 794-796 ◽  
pp. 945-950 ◽  
Author(s):  
Eva Gumbmann ◽  
Frederic de Geuser ◽  
Williams Lefebvre ◽  
Christophe Sigli ◽  
Alexis Deschamps
Keyword(s):  
Cold Deformation ◽  
Precipitation Kinetics ◽  
Nucleation Kinetics ◽  
Aerospace Applications ◽  
X Ray Scattering ◽  
Common Content ◽  
Precipitate Nucleation ◽  
The Impact ◽  
Kinetics Of

Al-Cu-Li alloys are extensively used for aerospace applications. The main hardening phase is the T1phase that precipitates as thin platelets on {111}Alplanes. To facilitate its nucleation, different minor alloying elements are added and dislocations are introduced by cold deformation before the ageing treatment. The impact of these additions in combination with the presence of dislocations on precipitate nucleation and growth needs a deeper understanding. In this work, we investigated the precipitation kinetics of the T1phase in alloys containing a common content of Cu and Li and different contents of minor solutes (Mg, Ag) where these elements are present either together or independently. A general overview on the precipitation kinetics was achieved by in-situ small-angle X-ray scattering and hardness measurements. The evaluation of precipitation kinetics reveals that magnesium plays an important role during precipitation by enhancing nucleation kinetics. Additionally, a smaller yet measureable effect of Ag, both in the presence and absence of Mg has been evidenced.

Atomistic Simulations of Copper Precipitation and Radiation Induced Segregation in α-Iron

2008 ◽  
Vol 139 ◽  
pp. 107-112 ◽  
Author(s):  
Frédéric Soisson ◽  
Chu Chun Fu
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Point Defects ◽  
Thermal Ageing ◽  
Atomistic Simulations ◽  
Precipitation Kinetics ◽  
Copper Precipitation ◽  
Radiation Induced

We present Monte Carlo simulations of the first stages of the coherent precipitation of Cu in α-Fe during thermal ageing and under irradiation. The simulations are based on a diffusion model by vacancy and self-interstitial jumps, the parameters of which are fitted on ab initio calculations. The simulations of precipitation kinetics during thermal ageing are compared with experimental ones. They reveal that precipitates containing up to several tens of atoms can be much more mobile than individual copper atoms, due to the trapping of vacancies in Cu. Monte Carlo simulations are also used to analyze the coupling between fluxes of point defects and Cu which occurs under irradiation and the possible resulting radiation induced segregation phenomena.

scholarly journals Changes in Electronic Device Properties During the Formation of Dislocations

1992 ◽  
Vol 280 ◽  
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Point Defects ◽  
Deleterious Effect ◽  
Electronic Device ◽  
Electronic Devices ◽  
Specimen Holder ◽  
Device Properties ◽  
Kinetics Of ◽  
Processing Steps ◽  
Dislocation Formation

ABSTRACTWe describe the results of an investigation into the formation and properties of dislocations in electronic devices. We have made electron transparent specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations into the devices by heating in situ in the electron microscope. A modification made on the specimen holder for our microscope enables us to measure the characteristics of these devices while they remain under observation in the microscope. We can therefore observe the changes in the electrical properties of the devices as dislocations form. We confirm that the introduction of dislocations has a deleterious effect on parameters such as the reverse leakage current through a diode. However the magnitude of the effect we observe can not be explained by a generation-recombination process and instead we suggest a model based on the creation of point defects or the diffusion of metals during the formation of dislocations. We also consider the kinetics of dislocation formation, and in particular how the extent of dislocation formation in a device depends on the subsequent processing steps which it undergoes.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

In situ observation of the martensitic transformation in (Mg,Y)-PSZ

1986 ◽  
Vol 44 ◽  
pp. 500-501
Author(s):  
R-R. Lee
Keyword(s):  
Martensitic Transformation ◽  
High Strength ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Considerable Potential ◽  
Transmission Electron ◽  
Structural Applications ◽  
Applied Stresses ◽  
Kinetics Of

Partially-stabilized ZrO2 (PSZ) ceramics have considerable potential for advanced structural applications because of their high strength and toughness. These properties derive from small tetragonal ZrO2 (t-ZrO2) precipitates in a cubic (c) ZrO2 matrix, which transform martensitically to monoclinic (m) symmetry under applied stresses. The kinetics of the martensitic transformation is believed to be nucleation controlled and the nucleation is always stress induced. In situ observation of the martensitic transformation using transmission electron microscopy provides considerable information about the nucleation and growth aspects of the transformation.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

In situ Time-Resolved Small-Angle X-ray Scattering Reveals the Formation Kinetics of Polyelectrolyte Complex Micelles

2019 ◽  
Author(s):  
Hao Wu ◽  
Jeffrey Ting ◽  
Siqi Meng ◽  
Matthew Tirrell
Keyword(s):  
Small Angle ◽  
Self Assembly ◽  
Electrostatic Interactions ◽  
Polyelectrolyte Complex ◽  
Time Resolved ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Ray Scattering

We have directly observed the <i>in situ</i> self-assembly kinetics of polyelectrolyte complex (PEC) micelles by synchrotron time-resolved small-angle X-ray scattering, equipped with a stopped-flow device that provides millisecond temporal resolution. This work has elucidated one general kinetic pathway for the process of PEC micelle formation, which provides useful physical insights for increasing our fundamental understanding of complexation and self-assembly dynamics driven by electrostatic interactions that occur on ultrafast timescales.

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