Formation Of Er-Related Donor Centers During Postimplantation Annealing Of Si:Er

1996 ◽  
Vol 442 ◽  
Author(s):  
N.A. Sobolev ◽  
O.V. Aleksandrov ◽  
E.I. Shek
Keyword(s):  
Subsequent Annealing ◽  
Electrical Parameters ◽  
Donor Center ◽  
Annealing Conditions ◽  
Postimplantation Annealing ◽  
Related Donor ◽  
Activation Coefficient ◽  
Er Doped

AbstractDependence of the donor center concentration, the Er activation coefficient and the nlayer thickness on the implantation and subsequent annealing conditions was studied. A model of formation of donor centers has been developed. The model is based on the interaction of Er atoms with self-interstitials. It describes the dependence of electrical parameters of Er-doped layers on temperature and time of postimplantation annealing.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

The Influence of Stresses on the Surface-Near Defect Structure

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Reiche ◽  
W. Nitzsche
Keyword(s):  
Stress Field ◽  
Defect Structure ◽  
Defect Formation ◽  
Nitride Layer ◽  
Nucleation And Growth ◽  
External Stress ◽  
Electrical Parameters ◽  
Initial Oxygen Concentration ◽  
Annealing Conditions ◽  
Initial Oxygen

ABSTRACTAn external stress field, induced at the film edge of a nitride layer, affects the defect generation in the surface-near region. Nucleation and growth of oxide precipitates and/or the generation of dislocations result in the reduction of the width of the denuded zone. The defect formation is discussed in dependence on the stress, gettering technique (annealing conditions), and on the initial oxygen concentration. The effect on electrical parameters is shown. The investigations prove that an additional oxide film (SiO2/Si3N4 films) does not relax completely the tensile stress induced by the nitride layer.

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 825-828
Author(s):  
Alessia Frazzetto ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
R. Lo Nigro ◽  
M. Saggio ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Electrical Parameters ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Specific Contact ◽  
Activation Annealing ◽  
P Type ◽  
Post Implantation

This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs.

Site-Selective Photoluminescence Spectroscopy of Er-Implanted Wurtzite Gan Under Various Annealing Conditions

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Kim ◽  
S. J. Rhee ◽  
X. Li ◽  
J. J. Coleman ◽  
S. G. Bishop
Keyword(s):  
Annealing Temperature ◽  
Broad Band ◽  
Optically Active ◽  
Thermally Activated ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Postimplantation Annealing ◽  
Recombination Centers ◽  
Pl Spectrum ◽  
Site Selective

ABSTRACTThe ˜1540 nm 4I13/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN annealed at temperatures in the 400 to 1000 °C range were investigated to gain a better understanding of the formation and dissociation processes of the various Er3+ sites and the recovery of damage caused by the implantation with increasing annealing temperature (TA). The monotonic increase in the intensity of the broad defect photoluminescence (PL) bands with increasing TA proves that these are stable radiative recombination centers introduced by the implantation and annealing process. These centers cannot be attributed to implantation-induced damage that is removed by postimplantation annealing. Selective wavelength pumping of PL spectra at 6 K reveals the existence of at least nine different Er3+ sites in this Er-implanted semiconductor. Most of these Er3+ PL centers are attributed to complexes of Er atoms with defects and impurities which are thermally activated at different TA. Only one of the nine observed Er3+ PL centers can be pumped by direct 4f absorption and this indicates that it is the highest concentration Er3+ center and it represents most of the optically active Er3+ in the implanted sample. The fact that this Er3+ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e. not complexed with defects or impurities. This 4f-pumped PL spectrum appears at annealing temperatures as low as 400°C, and although its intensity increases monotonically with increasing TA, the wavelengths and linewidths of its characteristic peaks are unaltered. The observation of this high quality Er3+ PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various Er3+ sites with increasing TA is due to the removal of competing nonradiative channels with annealing.

Recrystallization Processes in a Ni-20%Cr Alloy Subjected to High-Pressure Torsion

2012 ◽  
Vol 715-716 ◽  
pp. 309-314
Author(s):  
Nadezhda Dudova ◽  
Andrey Belyakov ◽  
Rustam Kaibyshev
Keyword(s):  
High Pressure ◽  
High Pressure Torsion ◽  
Subsequent Annealing ◽  
Simultaneous Occurrence ◽  
Annealing Conditions ◽  
Short Range Ordering ◽  
Average Grain Size ◽  
High Microhardness ◽  
Uniform Manner ◽  
Average Size

Microstructure evolution during annealing of a Ni-20%Cr alloy subjected to high-pressure torsion (HPT) at ambient temperature was examined. It was shown that discontinuous static recrystallization (DSRX) occurs in non-uniform manner under subsequent annealing in the alloy strained to ε<4. The material strained to ε6 or higher exhibits continuous grain growth (GG) under subsequent annealing. It is attributed to the fact that HPT led to the formation of nanoscale grains with an average size of 50 nm. Increasing fraction of these grains with strain leads to transition from DSRX to continuous GG under subsequent annealing. It was found that the main feature of recrystallization behavior of the Ni-20%Cr alloy subjected to HPT is simultaneous occurrence of short-range ordering and recrystallization processes under annealing conditions. As a result, despite the formation of recrystallized structure with an average grain size of 340 nm after annealing at 600°C (0.52 Tm), the material exhibits very high microhardness of 3.6 GPa.

The Influence Of The Led Luminaires Electrical Parameters On Their Correlated Colour Temperature During Operation Mode

2020 ◽  
pp. 89-96
Author(s):  
Sergei S. Kapitonov ◽  
Alexei S. Vinokurov ◽  
Sergei V. Prytkov ◽  
Sergei Yu. Grigorovich ◽  
Anastasia V. Kapitonova ◽  
...  
Keyword(s):  
Operation Mode ◽  
Light Sources ◽  
Electrical Parameters ◽  
Colour Temperature ◽  
Radiation Spectra ◽  
Service Period ◽  
Close Proximity ◽  
Definition Of ◽  
Comprehensive Study

The article describes the results of comprehensive study aiming at increase of quality of LED luminaires and definition of the nature of changes in their correlated colour temperature (CCT) in the course of operation. Dependences of CCT of LED luminaires with remote and close location of phosphor for 10 thousand hours of operation in different electric modes were obtained; the results of comparison between the initial and final radiation spectra of the luminaires are presented; using mathematical statistics methods, variation of luminaire CCT over the service period claimed by the manufacturer is forecast; the least favourable electric operation modes with the highest CCT variation observed are defined. The obtained results have confirmed availability of the problem of variation of CCT of LED luminaires during their operation. Possible way of its resolution is application of more qualitative and therefore expensive LEDs with close proximity of phosphor or LEDs with remote phosphor. The article may be interesting both for manufacturers and consumers of LED light sources and lighting devices using them.

Effect of annealing conditions on structural transformation of ZnS thin film

2006 ◽  
Vol 2006 (suppl_23_2006) ◽  
pp. 287-292 ◽  
Author(s):  
T. Kryshtab ◽  
J. Palacios-Gómez ◽  
M. Mazin
Keyword(s):  
Thin Film ◽  
Structural Transformation ◽  
Annealing Conditions
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