Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning

2019 ◽  
Vol 11 (12) ◽  
pp. 1667-1672
Author(s):  
Jin-Seong Park ◽  
In-Sung Park ◽  
Seon Yong Kim ◽  
Taehoon Lee ◽  
Jinho Ahn ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Flow Ratio ◽  
Deposition Chamber ◽  
Gas Flow Ratio ◽  
Chamber Temperature

Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value at a gas flow ratio of 0.71 in CF3I to CF3I/O2 and then increased at a higher CF3I gas flow ratio. In addition, the elevated plasma power increased the etch rate. However, the chamber temperature has little effect on the etch rate of SiO2 films. When only CF3I gas without O2 was supplied for etching, polymerized fluorocarbon was formed on the surface, indicating the role of oxygen in ashing the polymerized fluorocarbon during the etching process.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films

1995 ◽  
Vol 398 ◽  
Author(s):  
P. Santos-Filho ◽  
G. Stevens ◽  
Z. Lu ◽  
K. Koh ◽  
G. Lucovsky
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Structural Changes ◽  
Thermal Dissociation ◽  
Chemical Vapor ◽  
Hydrogen Release ◽  
Ex Situ ◽  
Infrared Study ◽  
Amorphous Silicon Nitride

ABSTRACTWe address aspects of hydrogen bonding and its thermal evolution in amorphous Silicon nitride films grown by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) from SiH4 and NH3 (or ND3) source gases. Rapid Thermal Annealing (RTA) decreases the Si-H(D) and SiN-H(D) bond populations. The hydrogen bonds break, and H2 (HD, D2) forms and evolves from the film with the heat treatment. This molecular hydrogen release is accompanied by Si- and N- bond healing as detected by a SiN infra red stretch mode signal gain. The ex-situ RTA experiment temperatures ranged from 400 °C to 1200 °C, in 100 °C steps and the film structural changes were monitored by Fourier Transform Infrared spectroscopy (FTIR) after each incremental anneal. Gas flow ratios R=NH3/SiH4 > 2 produced films in which SiN-H(D) bonds dissociated, and a gas desorption rate equation estimated an activation energy barrier of Ea = 0.3 eV. The release of hydrogen from the films in the form of H2 (D2) and ammonia radicals was detected by mass spectrometry and is shown here. The re-bonding of nitrogen to silicon upon thermal dissociation of hydrogen's is consistent with the improvement of the electrical properties of a-SiN:H films following RTA treatment.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Comparison of ICl and IBr for Dry Etching of III-Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Microwave Power ◽  
Etch Rate ◽  
Product Formation ◽  
Bond Breaking ◽  
Weakly Bound ◽  
Preferential Loss ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 µm/min. These rates are much higher than with Cl2/Ar, CH4/H2/Ar or other plasma chemistries. InN etch rates up to 1.15 µm/min and 0.7 µm/min for In0.5Ga0.5N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 µm/min for GaN to 0.3 µm/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of IC1 and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over A1N with IC1 and IBr are still lower than with Cl2- only.

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

Plasma Etching of Copper Films Using IR Light Irradiation

1994 ◽  
Vol 337 ◽  
Author(s):  
N. Hosoi ◽  
Y. Ohshita
Keyword(s):  
Low Temperature ◽  
Flow Rate ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Light Irradiation ◽  
Copper Films ◽  
Gas Flow Rate ◽  
Line Patterns ◽  
Ir Light

ABSTRACTCopper films are etched at a low temperature of 60 °C using a Cl2 plasma etching method with IR light irradiation. The etch rate is as high as 1 μm/min. The anisotropic Cu line patterns are obtained independent of the Cl2 gas flow rate and the etching pressure conditions. Moreover, there is no corrosion on the etched sample.

Laser-Induced Chemical Vapor Deposition of Silicon Nitride Films

1983 ◽  
Vol 29 ◽  
Author(s):  
Gary A. West ◽  
Arunava Gupta
Keyword(s):  
Silicon Nitride ◽  
Gas Flow ◽  
Silicon Oxide ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Gaseous Mixtures ◽  
Silicon Nitride Films ◽  
Film Content ◽  
Gas Flow Ratio ◽  
Laser Cvd

ABSTRACTFilms of silicon nitride have been deposited using a continuous wave CO2 laser to excite gaseous mixtures of silane and ammonia. A typical deposition rate is 150Å/min. The hydrogen film content and its dependence on the substrate deposition temperature are similar to that observed for plasma CVD silicon nitride. The CO2 laser CVD films are silicon rich with a Si/N ratio = 1.2 at a NH3/SiH4 gas flow ratio of 1000. Conformal step coverage is observed on patterned silicon oxide features.

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