Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning

2019 ◽  
Vol 11 (12) ◽  
pp. 1667-1672
Author(s):  
Jin-Seong Park ◽  
In-Sung Park ◽  
Seon Yong Kim ◽  
Taehoon Lee ◽  
Jinho Ahn ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Flow Ratio ◽  
Deposition Chamber ◽  
Gas Flow Ratio ◽  
Chamber Temperature

Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value at a gas flow ratio of 0.71 in CF3I to CF3I/O2 and then increased at a higher CF3I gas flow ratio. In addition, the elevated plasma power increased the etch rate. However, the chamber temperature has little effect on the etch rate of SiO2 films. When only CF3I gas without O2 was supplied for etching, polymerized fluorocarbon was formed on the surface, indicating the role of oxygen in ashing the polymerized fluorocarbon during the etching process.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition

2019 ◽  
Vol 142 (1) ◽  
Author(s):  
Sun Wong ◽  
Yogesh Jaluria
Keyword(s):  
Chemical Vapor Deposition ◽  
Computational Model ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Reactor Design ◽  
Film Deposition ◽  
Operating Conditions ◽  
Chamber Pressure ◽  
Organic Chemical

Abstract Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

2008 ◽  
Vol 23 (5) ◽  
pp. 1433-1442 ◽  
Author(s):  
S. Naskar ◽  
S.D. Wolter ◽  
C.A. Bower ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Rf Plasma ◽  
Flow Ratio ◽  
Plasma Chemical Vapor Deposition ◽  
Gas Flow Ratio

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

Intense UV-Visible-IR Adjustable Photoluminescence from Silicon-rich Oxynitride Layers Prepared by Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 560 ◽  
Author(s):  
Zingway Pei ◽  
Y.J. Chung ◽  
H.L. Hsiao ◽  
H.L. Hwang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Clusters ◽  
Process Gas ◽  
Gas Flow Ratio ◽  
Uv Visible

ABSTRACTThe intense UV-visible-IR adjustable light emissions from silicon-rich oxynitride thin films without any thermal annealing were observed at room temperature under a 325 nm He-Cd laser excitation. The silicon-rich oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) with the mixture of 5% Ar diluted silane and nitrous oxide gases. The strong naked-eye recognizable photoluminescence (blue-white-red) could be adjusted by changing the process gas flow ratio τ =([SiH4]/[N20]). To the best of our knowledge, intense and adjustable UV-blue light emissions in the as-deposited thin films are first reported in this work. The Fourier Transform infrared (FTIR) spectroscopy was applied to investigate the microstructure-bonding configurations, in which silicon polysilane related bonding at 830-890 cm' present that silicon complex, exists along with the Si-O-Si bonding. X-ray photoelectron spectroscopy was used to investigate the binding configuration, the binding energy of Si 2p appearing at 99.3 eV was indicative of formation of the silicon clusters. As a consequence, we suppose that the visible-IR lights emissions might possible be strongly related to silicon clusters formation in the films and the intense UV emissions might come from the oxygen-related defects.

Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition

2010 ◽  
Vol 25 (9) ◽  
pp. 1778-1783 ◽  
Author(s):  
Seok-Hyo Yun ◽  
Suthan Kissinger ◽  
Don Wook Kim ◽  
Jun-Ho Cha ◽  
Yong-Ho Ra ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Gas Flow Rate ◽  
Metalorganic Chemical

We demonstrated the growth of indium nitride (InN) nanowires on Si(111) substrates by metalorganic chemical vapor deposition without the use of any intermediate GaN or AlN buffer layer. The InN nanowires were grown by forming the Au + In droplets and In droplets on the Au- and In-coated Si substrate. The growth conditions such as chamber pressure, chamber temperature, reaction gas flow rate, and carrier gas flow rate were optimized to yield nanowires free from contamination. Depending on the growth parameters different growth regimes for the InN nanowires were identified. The strength of self-catalytic route has been highlighted. The morphology and microstructures of samples were characterized by x-ray diffraction and scanning electron microscopy (SEM). The transmission electron microscopy and SEM investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 400 nm, and lengths up to 3 µm. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 0.77 eV.

Investigation of Chemical Vapor Deposited Graphene Film on Oxide Substrate

2015 ◽  
Vol 815 ◽  
pp. 18-21
Author(s):  
Tao Huang ◽  
Lin Chen ◽  
Qing Qing Sun ◽  
Peng Zhou ◽  
David Wei Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Gas Flow Ratio ◽  
Device Applications ◽  
Grown Graphene ◽  
The Impact

Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated.

High Quality RTCVD Sidewall Spacer Dielectrics

1995 ◽  
Vol 387 ◽  
Author(s):  
D. S. Miles ◽  
M. R. Mirabedini ◽  
D. Venables ◽  
J. J. Wortman ◽  
D. M. Maher
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Structural Quality ◽  
Aspect Ratios ◽  
Wide Range

AbstractRapid thermal chemical vapor deposition (RTCVD) has been investigated as an alternative to low pressure chemical vapor deposition (LPCVD) for formation of sidewall spacer dielectric. Silane (SiH 4 ) and tetraethylorthosilicate (TEOS) were chosen as the silicon gas sources in these studies. Reasonable deposition rates were obtained for RTCVD oxides, oxynitrides and nitrides for use in thin sidewall spacer application. Refractive index and etch rate measurements suggest that oxides deposited with a 2 % flow rate ratio of SiH 4 /N2O and annealed at 900 °C for 10 seconds produces films with excellent structural quality. Refractive index and wet etch rate both exhibit a linear dependence with the gas flow ratio. An increase in deposition pressure decreased the refractive index while increasing the etch rate. Oxide and oxynitride dielectrics formed using SiH 4 had a much superior step coverage over a wide range of aspect ratios than TEOS dielectrics. Dit and breakdown fields for oxides and oxynitrides with 3 atomic % nitrogen were comparable to that of thermal oxide indicating their good electrical quality. The results reported suggest that RTCVD sidewall spacers are a promising candidate for use in future MOSFET devices.

Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
J.J. Van Glabbeek ◽  
G.A.C.M. Spierings ◽  
M.J.E. Ulenaers ◽  
G.J.M. Dormans ◽  
P.K. Larsen
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Flow Ratio ◽  
Ion Etching ◽  
Ferroelectric Capacitor ◽  
Chemical Enhancement ◽  
Gas Flow Ratio ◽  
Ar Gas ◽  
Ferroelectric Capacitors

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

Chemical vapor deposition parameters dependent length control of hexagonal graphene

2016 ◽  
Vol 231 (6) ◽  
pp. 1187-1196
Author(s):  
Hatem Abuhimd
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Gas Flow Rate ◽  
Production Scale ◽  
Surface Graph ◽  
Deposition Parameters

This paper presents a process metamodel-based artificial neural network full factorial experimental design and analysis to study the yield of lengthy hexagonal graphene grown by chemical vapor deposition. All of the process variables of chemical vapor deposition such as temperature, pressure, and gas flow rate under the study played a role in influencing hexagonal graphene length; the current study investigated their main effects and interactions. The metamodel-based analysis demonstrates that the hydrocarbon flow rate and the pressure are the most statistically significant factors that influence the length of hexagonal graphene. In particular, minimum and maximum values of the chamber pressure are not significant in terms of the concentrating effect they may have on the flowing mixture of gases with very small flow rate, i.e. 50 sccm. At the highest flow rate of 400 sccm, the chamber pressure stepped up to 764 Torr, which can support the growth reaction to the extent that the resultant hexagonal graphene length of 900 µm can be achieved. However, the two level effect of the flow rate can optimize the length to 990 µm and ≈1390 µm at 700 Torr and 764 Torr, respectively. In addition, the response surface graph confirms the factors of significance and adds that higher flow with lower pressure will consistently yield tall hexagonal graphene. We found that gas flow rate is the most significant of the control variables and only the optimum value of the gas flow rate of 225 sccm can ensure the growth of tall hexagonal graphene. We also found that the interaction of flow rate with temperature of the gases in the chamber is extremely significant to the quality of output. Outcomes of this investigation are beneficial for moving close to producing hexagonal graphene on production scale for future applications.

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