A Model for Indium Incorporation in the Growth of InGaN Films

1996 ◽  
Vol 449 ◽  
Author(s):  
E. L. Piner ◽  
F. G. McIntosh ◽  
J. C. Roberts ◽  
K. S. Boutros ◽  
M. E. Aumer ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Reaction Pathways ◽  
Balance Model ◽  
Mass Balance Model ◽  
Structural And Optical Properties ◽  
Indium Metal

ABSTRACTThe development of high quality indium based III-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2749-2753 ◽  
Author(s):  
Chun Hsing Liu ◽  
Meiso Yokoyama ◽  
Yan Kuin Su ◽  
Nien Chung Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

1992 ◽  
Vol 60 (11) ◽  
pp. 1366-1368 ◽  
Author(s):  
M. Asif Khan ◽  
R. A. Skogman ◽  
J. M. Van Hove ◽  
D. T. Olson ◽  
J. N. Kuznia
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

1991 ◽  
Vol 222 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
C. A. Beyler ◽  
M. Cao ◽  
P. D. Dapkus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Growth Parameter ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gain Medium ◽  
Atomic Layer Epitaxy ◽  
Small Areas ◽  
Wide Range ◽  
Optoelectronic Integration

ABSTRACTTwo implementations of laser assisted atomic layer epitaxy(LALE) for selective area growth of GaAs using trimethylgallium and AsH3 as precursors are described. A wide range of growth parameters lead to self-limiting monolayer/cycle growth which is suited for precise layer thickness control. By combining LALE with conventional metalorganic chemical vapor deposition, A10.3Ga0.7As/GaAs double heterostructures including LALE GaAs have been grown, permitting electrical and optical characterization to be performed on the thin and small areas of the LALE deposits. The information is used in a growth parameter optimization process resulting in device quality GaAs. Quantum well lasers with active region grown by LALE are demonstrated for the first time. The application of LALE to optoelectronic integration is demonstrated by depositing small area quantum wells as the gain medium in an otherwise transparent waveguide.

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs.

1989 ◽  
Vol 145 ◽  
Author(s):  
E. Colas ◽  
R. Bhat ◽  
G. C. Nihous
Keyword(s):  
Initial Conditions ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Impurity Incorporation ◽  
Gas Concentration ◽  
Group Iii ◽  
Sequential Group

AbstractDevice quality GaAs was grown in a conventional Organometallic Chemical Vapor Deposition (OMCVD) reactor, using sequential group III and V reactant gas exposures typical of Atomic Layer Epitaxy (ALE). The importance of gas phase concentration transients during the ALE cycles was revealed by systematic investigations of the effect of the sequences used, for the cycles, on impurity incorporation as well as on the growth rates. In this study, we attempt to quantify the effects of such transients by solving the diffusion equation for the reactant gases, with initial conditions specific to ALE. We used this model to calculate the time dependence of the reactant gas concentration at the growing surface. This quantitative study gives us new insights into the ALE technique and confirms that the V/II ratio at the substrate surface can be controlled by the choice of the gas sequence.

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