The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

A Model for Indium Incorporation in the Growth of InGaN Films

1996 ◽  
Vol 449 ◽  
Author(s):  
E. L. Piner ◽  
F. G. McIntosh ◽  
J. C. Roberts ◽  
K. S. Boutros ◽  
M. E. Aumer ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Reaction Pathways ◽  
Balance Model ◽  
Mass Balance Model ◽  
Structural And Optical Properties ◽  
Indium Metal

ABSTRACTThe development of high quality indium based III-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.

Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2749-2753 ◽  
Author(s):  
Chun Hsing Liu ◽  
Meiso Yokoyama ◽  
Yan Kuin Su ◽  
Nien Chung Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Pressure ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1725-1728 ◽  
Author(s):  
ERICK M. LARRAMENDI ◽  
EDGAR LÓPEZ-LUNA ◽  
OSVALDO DE MELO ◽  
ISAAC HERNÁNDEZ-CALDERÓN
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
High Energy ◽  
Atomic Layer Epitaxy ◽  
Temporal Behavior ◽  
High Energy Electron ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Znte Film ◽  
Cdte Surface

Layers of 6 and 16 Cd–Te–Zn–Te periods were grown by atomic layer epitaxy (ALE) within ZnTe thin films. Different samples were grown at substrate temperatures of 260 and 290°C. Information about the kinetics of growth and surface reconstruction during the ALE growth of CdTe and ZnTe films, and Cd–Te–Zn–Te periods was obtained by means of reflection high-energy electron diffraction (RHEED) experiments and through the analysis of the temporal behavior of the intensities of several features of the RHEED patterns. The photoluminescence of the sample grown at 260°C presents two narrow and intense peaks corresponding to emission from quantum wells (QWs). However, the spectrum of the samples grown at 290°C does not show any feature associated with QWs, the spectrum resembling that of a ZnTe film. Cd replacement by Zn atoms explains the absence of the CdZnTe QWs at 290°C and a lower Cd content than expected at 260°C. The replacement of Cd atoms by Zn atoms in the CdTe surface was clearly demonstrated by Auger experiments.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

1992 ◽  
Vol 60 (11) ◽  
pp. 1366-1368 ◽  
Author(s):  
M. Asif Khan ◽  
R. A. Skogman ◽  
J. M. Van Hove ◽  
D. T. Olson ◽  
J. N. Kuznia
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

1991 ◽  
Vol 222 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
C. A. Beyler ◽  
M. Cao ◽  
P. D. Dapkus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Growth Parameter ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gain Medium ◽  
Atomic Layer Epitaxy ◽  
Small Areas ◽  
Wide Range ◽  
Optoelectronic Integration

ABSTRACTTwo implementations of laser assisted atomic layer epitaxy(LALE) for selective area growth of GaAs using trimethylgallium and AsH3 as precursors are described. A wide range of growth parameters lead to self-limiting monolayer/cycle growth which is suited for precise layer thickness control. By combining LALE with conventional metalorganic chemical vapor deposition, A10.3Ga0.7As/GaAs double heterostructures including LALE GaAs have been grown, permitting electrical and optical characterization to be performed on the thin and small areas of the LALE deposits. The information is used in a growth parameter optimization process resulting in device quality GaAs. Quantum well lasers with active region grown by LALE are demonstrated for the first time. The application of LALE to optoelectronic integration is demonstrated by depositing small area quantum wells as the gain medium in an otherwise transparent waveguide.

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