Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

1991 ◽  
Vol 222 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
C. A. Beyler ◽  
M. Cao ◽  
P. D. Dapkus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Growth Parameter ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gain Medium ◽  
Atomic Layer Epitaxy ◽  
Small Areas ◽  
Wide Range ◽  
Optoelectronic Integration

ABSTRACTTwo implementations of laser assisted atomic layer epitaxy(LALE) for selective area growth of GaAs using trimethylgallium and AsH3 as precursors are described. A wide range of growth parameters lead to self-limiting monolayer/cycle growth which is suited for precise layer thickness control. By combining LALE with conventional metalorganic chemical vapor deposition, A10.3Ga0.7As/GaAs double heterostructures including LALE GaAs have been grown, permitting electrical and optical characterization to be performed on the thin and small areas of the LALE deposits. The information is used in a growth parameter optimization process resulting in device quality GaAs. Quantum well lasers with active region grown by LALE are demonstrated for the first time. The application of LALE to optoelectronic integration is demonstrated by depositing small area quantum wells as the gain medium in an otherwise transparent waveguide.

A Model for Indium Incorporation in the Growth of InGaN Films

1996 ◽  
Vol 449 ◽  
Author(s):  
E. L. Piner ◽  
F. G. McIntosh ◽  
J. C. Roberts ◽  
K. S. Boutros ◽  
M. E. Aumer ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Reaction Pathways ◽  
Balance Model ◽  
Mass Balance Model ◽  
Structural And Optical Properties ◽  
Indium Metal

ABSTRACTThe development of high quality indium based III-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs.

1989 ◽  
Vol 145 ◽  
Author(s):  
E. Colas ◽  
R. Bhat ◽  
G. C. Nihous
Keyword(s):  
Initial Conditions ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Impurity Incorporation ◽  
Gas Concentration ◽  
Group Iii ◽  
Sequential Group

AbstractDevice quality GaAs was grown in a conventional Organometallic Chemical Vapor Deposition (OMCVD) reactor, using sequential group III and V reactant gas exposures typical of Atomic Layer Epitaxy (ALE). The importance of gas phase concentration transients during the ALE cycles was revealed by systematic investigations of the effect of the sequences used, for the cycles, on impurity incorporation as well as on the growth rates. In this study, we attempt to quantify the effects of such transients by solving the diffusion equation for the reactant gases, with initial conditions specific to ALE. We used this model to calculate the time dependence of the reactant gas concentration at the growing surface. This quantitative study gives us new insights into the ALE technique and confirms that the V/II ratio at the substrate surface can be controlled by the choice of the gas sequence.

scholarly journals Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

2017 ◽  
Vol 15 (19) ◽  
pp. 337
Author(s):  
Juan Carlos Salcedo Reyes
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Sobre Todo

El pasado 7 de octubre de 2014 se anunció, por parte del correspondiente comité, que el premio Nobel de Física 2014 se les concedió a los japoneses Isamu Akasaki, Hiroshi Amano y Shuji Nakamura por la invención de los diodos emisores de luz (LED, por sus siglas en inglés) con emisión en la región verde-azul del espectro visible (Nakamura, Mukai & Senoh, 1991). La importancia de este invento está relacionada tanto con las potenciales aplicaciones de los LED azules como fuente de luz eficiente y ecológica, como en el desarrollo de los llamados sistemas cuánticos. Es así como actualmente el desarrollo de dispositivos electrónicos y opto-electrónicos, cuya región activa está constituida por estructuras cuánticas, está fuertemente modulado por la capacidad de fabricar dichas estructuras con una alta calidad cristalina, un alto control de la composición química y, sobre todo, con gran reproducibilidad. En este sentido, las técnicas de crecimiento epitaxial constituyen la piedra angular en el desarrollo tecnológico que supone la nano-electrónica. En este trabajo se plantean, en general, los diferentes procesos químicos y físicos que tienen lugar durante un crecimiento por Epitaxia de Capas Atómicas (Atomic Layer Epitaxy, ALE) de pozos cuánticos ultra-delgados (Ultra-Thin Quantum Wells, UTQW) de ZnXCd1-X.Se y se estudian, en particular, la cinética del proceso de adsorción de Zn dentro de la estructura cristalina en términos de una ecuación de reacción de primer orden que define la composición de la estructura en función de la temperatura del sustrato (Ts) y del flujo de átomos de zinc. Se obtienen los valores para la energía de activación, el factor pre-exponencial y la constante de adsorción de Zn. La composición química de los UTQW es uno de los parámetros más importantes para el diseño de estructuras cuánticas, ya que define la energía de emisión en potenciales aplicaciones opto-electrónicas y, en particular, en el desarrollo de LED azules y UV.

Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy

2019 ◽  
Vol 53 (16) ◽  
pp. 2060-2063 ◽  
Author(s):  
V. Agekyan ◽  
M. Chukeev ◽  
G. Karczewski ◽  
A. Serov ◽  
N. Filosofov ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Double Quantum

Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Flows ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.

scholarly journals Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84Multiple Quantum Wells on Ge Virtual Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hung-Pin Hsu ◽  
Pong-Hong Yang ◽  
Jeng-Kuang Huang ◽  
Po-Hung Wu ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Detailed Comparison ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Wide Range ◽  
Quantum Confined

We report a detailed characterization of a Ge/Si0.16Ge0.84multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

scholarly journals Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics

1989 ◽  
Vol 161 ◽  
Author(s):  
J.K. Shurtleff ◽  
D.D. Allred ◽  
R.T. Perkins ◽  
J.M. Thorne
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Atomic Layer Epitaxy ◽  
Ray Optics ◽  
X Ray ◽  
Vapor Deposition Technique ◽  
Number Of Cycles

ABSTRACTThin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

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