Residual Stresses in Single and Multilayer Composite Diamond Coatings

1996 ◽  
Vol 458 ◽  
Author(s):  
K. Jagannadham ◽  
T. R. Watkims ◽  
J. Narayan

ABSTRACTResidual stresses were measured in different types of diamond coatings deposited onto molybdenum substrates by hot filament chemical vapor deposition. The types of coatings examined include a continuous single layer diamond coating and a continuous multilayer diamond composite coating with an aluminum nitride embedding layer. The stresses were determined by X-ray diffraction and Raman spectroscopy and compared.

1997 ◽  
Vol 505 ◽  
Author(s):  
K. Jagannadham ◽  
T. R. Watkins

ABSTRACTResidual stresses in four types of diamond films deposited by hot filament chemical vapor deposition on molybdenum substrate, three types on tungsten carbide or silicon nitride substrate are measured. Residual stresses are determined by X-ray method and Raman spectroscopy. The results from both these techniques are compared and conclusions are made on the mechanisms of adhesion of diamond films to the different substrates.


2011 ◽  
Vol 175 ◽  
pp. 233-238 ◽  
Author(s):  
Bin Shen ◽  
Fang Hong Sun ◽  
Zhi Ming Zhang ◽  
He Sheng Shen ◽  
Song Shou Guo

Micro/nano-crystalline multilayered ultra-smooth diamond (USCD) films are deposited on the interior-hole surface of conventional WC-Co drawing dies with a combined process consisting of the hot filament chemical vapor deposition (HFCVD) method and polishing technique. Scanning electron microscopy (SEM), surface profilemeter, Raman spectroscopy and X-ray diffraction (XRD) are employed to provide a characterization of as-deposited USCD films. The results exhibit that as-deposited USCD films present an ultra-smooth surface, its surface roughness values (Ra) in the entry zone, drawing zone and bearing zone are measured as 25.7 nm, 23.3 nm and 25.5 nm respectively. Furthermore, the working lifetime and performance of as-fabricated USCD coated drawing dies are examined in producing copper tubes with hollow sinking, fixed plug and floating plug. The results show that the lifetime of USCD coated drawing is as more than 30 times as that of WC-Co drawing dies in the drawing process with hollow sinking, 7 times in the fixed plug drawing and 10 times in the floating drawing.


2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.


2013 ◽  
Vol 845 ◽  
pp. 36-40
Author(s):  
Tze Mi Yong ◽  
Esah Hamzah

Multi-layer alternating nanocrystalline diamond (NCD) layer and polycrystalline diamond (PCD) layer was successfully deposited on pretreated tungsten carbide (WC) substrates with various seeding sizes (<0.1μm synthetic, <0.5μm synthetic, <0.25μm natural, <0.5μm natural, and <1μm natural) diamond with and without hammering by silicon carbide. X-rays penetrate through the coating to the substrate from XRD method was able to show strong peaks of diamond relative to WC despite the diamond film being 4μm thick only. It is found that substrates with no hammering produce stronger signals. The coating was cross sectioned and analysed using field emission scanning electron microscopy showing the multi-layer with NCD grains that has coalesced and columnar structure for PCD. None of the diamond coating delaminated during cross sectioning showing good adhesion. Raman was able to capture data from the 1-1.6μm thick NCD layer only while AFM measured the extreme low roughness of the NCD surface.


1995 ◽  
Vol 415 ◽  
Author(s):  
W.D. Fan ◽  
K. Jagannadham ◽  
J. Narayan

ABSTRACTComposite diamond coatings on Si3N4 substrates have been developed to minimize stresses/strains and improve wear and adhesion properties. The coatings consist of a first layer of discontinuous diamond crystallites which are anchored to the Si3N4 substrate by a second interposing layer of TiC or TiN film. A top third layer of continuous diamond film is grown epitaxially on the first layer. The diamond films and TiC or TiN films were deposited using hot filament chemical vapor deposition and laser physical vapor deposition, respectively. The TiC and TiN films were examined by X-ray diffraction. The diamond films were characterized by scanning electron microscopy and Raman spectroscopy. Adhesion of the diamond coatings was investigated using overlap polishing with diamond paste, wear against Al-12.5%Si alloy, and pull-test. The results show that after introducing an interposing layer of TiC or TiN, adhesion of diamond coatings on Si3N4 substrates is improved significantly. After polishing test against diamond paste for 4 hours, only 30% of diamond was retained with single diamond coating while 80% of diamond was found with TiN composite diamond coating. The mechanism of improvement of adhesion is discussed.


1989 ◽  
Vol 162 ◽  
Author(s):  
Jerry Czarnecki ◽  
David Thumim

ABSTRACTWeight recording using a thermobalance type Cahn TG-171 has been applied to study Hot, Filament Enhanced Chemical Vapor Deposition (HFCVD) of carbon films from methane. Changes in the deposition rates during each individual process may indicate four stages of the deposition kinetics: 1- generation of nuclei (slow, linear); 2- growth on nuclei (exponential increase); 3- aggregation of crystals (slowing); 4- growth on the surface of diamond film, completely covering the substrate (linear). An attempt to determine the concentration of graphite in the deposited layer, based on differences in oxidation rates of diamond and graphite has been proposed, as supplementary to X-ray diffraction and Raman spectroscopy.


2014 ◽  
Vol 802 ◽  
pp. 180-185 ◽  
Author(s):  
Nazir M. Santos ◽  
Tatiane M. Arantes ◽  
Neidênei G. Ferreira ◽  
Mauricio R. Baldan

The purpose of this work is to study the structural and morphological modification of the surface of the n-type diamond electrodes as a function of nitrogen doping. The characterizations of these electrodes were made using Raman Spectroscopy, Contact Angle, X-ray diffraction and Scanning Electron Microscopy (SEM). The nitrogen-doped diamond (NDD) electrodes were produced using Hot Filament-assisted Chemical Vapor Deposition method (HFCVD) from methane, hydrogen and nitrogen in the gas mixture. The results from Raman spectroscopy show that the diamond films obtained with nitrogen addition presented one large band at 1100-1700 cm-1. The SEM images showed that the variation in the nitrogen doping influenced the growth rate of films by promoting changes in the sizes of grains from microcrystalline to nanocrystalline texture. This behavior supported the results obtained from X-ray diffraction analyses. It was possible to verify a decrease in the crystallite size as a function of the nitrogen increase.


2005 ◽  
Vol 200 (1-4) ◽  
pp. 170-173 ◽  
Author(s):  
P. Goudeau ◽  
L. Vandenbulcke ◽  
C. Met ◽  
M.I. De Barros ◽  
P. AndreAzza ◽  
...  

2021 ◽  
Vol 6 (5) ◽  
pp. 177-180
Author(s):  
Delfino R. Gutiérrez ◽  
Tomás Díaz-Becerril ◽  
Godofredo García-Salgado ◽  
Antonio Coyopol-Solís ◽  
Enrique Rosendo-Andrés ◽  
...  

Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A shift to the right around 0.17 degree of the X-Ray Diffraction pattern of the ZnO:Ni film was observed with respect to undoped ZnO films. Morphologically by Scanning Electron Microscopy was noticed a Core-Shell type growth in ZnO undoped and a nanostructured type (Nano-wire) in ZnO doped with Ni. Photoluminescence measurements showed an increase in the intensity of the green emission band of ZnO:Ni. It was attributed to defects of oxygen vacancies (VO), zinc vacancies (VZn), zinc interstitials (Zni), oxygen interstitials (Oi), and oxygen vacancies complex (VO complex) in the structure of the film. The incorporation of Ni atoms in the ZnO structure stresses the crystal lattice, leaving behind a large number of surface defects that increase the emission of PL.


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