In-Situ TEM Deformation Studies of Dislocation Generation and Motion in High-Purity MO Single Crystals

1999 ◽  
Vol 578 ◽  
Author(s):  
M. Jouiad ◽  
B. W. Lagow ◽  
I. M. Robertson ◽  
D. H. Lassila
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
High Purity ◽  
In Situ Tem ◽  
Dislocation Source ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Dislocation Tangle ◽  
Source Operation

AbstractThe generation and motion of dislocations in high-purity single crystals of Mo have been observed in real time by deforming electron-transparent samples in-situ in a transmission electron microscope. At 300 K and at low levels of stress, a novel dislocation source was observed that generated a long, straight screw dislocation. The source was a dislocation tangle that existed in the annealed material. An edge dislocation emerged from the tangle, trailing behind it the screw dislocation. These screw dislocations were immobile at this stress level. At higher stresses, the same dislocation tangle generated many dislocations, but now by a pole mechanism. The nature of these tangles and the source operation mechanisms will be described.

TEM In-Situ Study of Dislocation Motion in B2 NiAl Single Crystals

1996 ◽  
Vol 460 ◽  
Author(s):  
B. Ghosh ◽  
M. A. Crimp
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Mechanical Response ◽  
Tensile Deformation ◽  
Dislocation Motion ◽  
Thermal Treatments ◽  
Commercially Pure ◽  
Transmission Electron ◽  
Uniform Manner

ABSTRACTIn an effort to understand dislocation mobility in stoichiometric NiAl single crystals, in-situ tensile deformation experiments have been performed in a transmission electron microscope. Commercially pure and high purity single crystals with <001> and <110> orientations have been examined. Two different thermal treatments were adopted in order to effect the mechanical response. Dislocation motion was observed in all samples. Pre-existing dislocations, either isolated or tangled, were not observed to move at any point leading up to sample failure. Cross-slip of the mobile dislocations was observed in some cases. In commercially pure single crystals, dislocations were found to move at a much slower rate and uniform manner in contrast to motion in high purity single crystals which occurs by rapid jumps.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

scholarly journals In-Situ TEM Annealing Observation of Helium Bubble Evolution in Pre-Irradiated FeCoNiCrTi0.2 Alloys

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3727
Author(s):  
Huanhuan He ◽  
Zhiwei Lin ◽  
Shengming Jiang ◽  
Xiaotian Hu ◽  
Jian Zhang ◽  
...  
Keyword(s):  
Vacuum Arc ◽  
In Situ Tem ◽  
Face Centered Cubic ◽  
Helium Bubble ◽  
High Entropy ◽  
Helium Bubbles ◽  
Transmission Electron ◽  
Bubble Evolution ◽  
Face Centered

The FeCoNiCrTi0.2 high-entropy alloys fabricated by vacuum arc melting method, and the annealed pristine material, are face centered cubic structures with coherent γ’ precipitation. Samples were irradiated with 50 keV He+ ions to a fluence of 2 × 1016 ions/cm2 at 723 K, and an in situ annealing experiment was carried out to monitor the evolution of helium bubbles during heating to 823 and 923 K. The pristine structure of FeCoNiCrTi0.2 samples and the evolution of helium bubbles during in situ annealing were both characterized by transmission electron microscopy. The annealing temperature and annealing time affect the process of helium bubbles evolution and formation. Meanwhile, the grain boundaries act as sinks to accumulate helium bubbles. However, the precipitation phase seems have few effects on the helium bubble evolution, which may be due to the coherent interface and same structure of γ’ precipitation and matrix.

scholarly journals In situ TEM thermal annealing of high purity Fe10wt%Cr alloy thin foils implanted with Ti and O ions

2019 ◽  
Vol 461 ◽  
pp. 219-225
Author(s):  
Martin Owusu-Mensah ◽  
Stéphanie Jublot-Leclerc ◽  
Aurélie Gentils ◽  
Cédric Baumier ◽  
Joël Ribis ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
High Purity ◽  
In Situ Tem ◽  
Thin Foils

scholarly journals Fracture in Bulk Amorphous Alloys

1998 ◽  
Vol 554 ◽  
Author(s):  
J. A. Horton ◽  
J. L. Wright ◽  
J. H. Schneibel
Keyword(s):  
Crack Propagation ◽  
Crack Growth ◽  
Shear Bands ◽  
Bulk Amorphous Alloy ◽  
In Situ Tem ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Crack Tips ◽  
Temperature Fracture

AbstractThe fracture behavior of a Zr-based bulk amorphous alloy, Zr-10 Al-5 Ti-17.9 Cu-14.6Ni (at.%), was examined by transmission electron microscopy (TEM) and x-ray diffraction forany evidence of crystallization preceding crack propagation. No evidence for crystallizationwas found in shear bands in compression specimens or at the fracture surface in tensile specimens.In- situ TEM deformation experiments were performed to more closely examine actualcrack tip regions. During the in-situ deformation experiment, controlled crack growth occurredto the point where the specimen was approximately 20 μm thick at which point uncontrolledcrack growth occurred. No evidence of any crystallization was found at the crack tips or thecrack flanks. Subsequent scanning microscope examination showed that the uncontrolledcrack growth region exhibited ridges and veins that appeared to have resulted from melting. Performing the deformations, both bulk and in-situ TEM, at liquid nitrogen temperatures (LN2) resulted in an increase in the amount of controlled crack growth. The surface roughness of the bulk regions fractured at LN2 temperatures corresponded with the roughness of the crack propagation observed during the in-situ TEM experiment, suggesting that the smooth-appearing room temperature fracture surfaces may also be a result of localized melting.

Glass-Forming Ability and Crystallization of High Purity Pd-Cu-Ni-P Alloy

2000 ◽  
Vol 644 ◽  
Author(s):  
Nobuyuki Nishiyama ◽  
Mitsuhide Matsushita ◽  
Akihisa Inoue
Keyword(s):  
High Purity ◽  
Isothermal Annealing ◽  
Glass Forming Ability ◽  
In Situ Tem ◽  
Nucleation Behavior ◽  
Spherical Region ◽  
Glass Forming ◽  
High Purity Alloy ◽  
Nose Temperature

AbstractGlass-forming ability, thermal stability and nucleation behavior of a Pd40Cu30Ni10P20 alloy prepared using a high purity polycrystalline phosphorus are investigated. The critical cooling rate for glass formation for the high purity alloy is the same as that for the previous result, but the improvement of undercooling reaches about 80 K as compared with the fluxed ordinary alloy. In comparison with the non-fluxed alloy, the solidified structure of the present highly purified alloy is significantly different. The non-fluxed sample shows the characteristic “island-like” structure consisted of acicular fcc-Pd2Ni2P solid solution and Cu3Pd intermetallic compound. These acicular phases appear to be caused by the growth of quenched-in nuclei. In the isothermal experiment, nucleus density exhibits time dependence even at 683 K near the nose temperature. It is assumed that the crystallization behavior for the highly purified alloy is closer to homogeneous nucleation from quenched-in nuclei dominant behavior. In order to investigate the nucleation behavior, in-situ TEM observation was carried out. Spherical Pd15P2 particle with a diameter about 15 nm is observed, and this spherical region repeats generation and annihilation during isothermal annealing. The reason for the high glass-forming ability is discussed on the basis of the obtained results.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

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