TEM studies of spots crystallized in amorphous films by electron beam

Author(s):  
V. Yu. Kolosov

Electron beam (e-beam) annealing is powerful method for local modifying and crystallization in desired modes of semiconductors and microelectronics components and is also interesting for information storing. Nevertheless, discussed in many papers mechanism of explosive crystallization of amorphous (a-Ge, a-Si) films is still not clear enough and requires new structure studies. It is more relevant for recently discovered growing of micro-crystals with strong internal lattice bending (gradient crystals) in some amorphous films. This paper reports our findings in the structure of spots crystallized in these unusual modes by TEM beam in vacuum deposited (Ge, Se, Se-Te) or prepared by pyrolysis (Fe2O3) unsupported amorphous films. Bendcontour technique was used to analyze the fields of lattice orientation for gradient crystals, including in situ crystal growth studies or videorecord analysis.Explosively crystallized spots in a-Ge, a-Si films are known to consist of 3 zones, Fig. 1. We observed the same zones for films 400-800Å thick, deposited at rates 1- 100Å/s: polycrystal central zone (O), surrounded by a fan of radially elongated single crystals (zone R) which in turn is surrounded by zone (C), formed by concentric or spiral shells (each subdivided into single-crystal subshell and polycrystal subshell).

2006 ◽  
Vol 932 ◽  
Author(s):  
Maria V. Zamoryanskaya ◽  
Boris E. Burakov ◽  
Ekaterina V. Kolesnikova ◽  
Michael A. Zuykov

ABSTRACTIn order to study americium incorporation into calcite, CaCO3, under conditions of crystal growth, two samples of single crystal Am-doped calcite were synthesized and studied by cathodoluminescence (CL) spectroscopy in comparison with undoped and Eu-doped artificial calcite. Americium contents in calcite crystals were (in kBq/g): 1) 6.9; 2) 1.9(E+4). The CL emission of undoped and Am-Eu-doped calcitesamples was characterized by three broad bands at 2.03; 2.47 and 2.96 eV. Weak CL lines related to typical transitions 5D07F1,2,4 of Eu3+ and Am3+ions were observed at 1.68; 1.99, 2.06 eV and 1.60; 1.98 eV, respectively. Degrading of calcite structure under irradiation has been studied using CL emission of high power electron beam.


2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.


Author(s):  
Phan Gia Le ◽  
Huyen Tran Tran ◽  
Jong-Sook Lee ◽  
John G. Fisher ◽  
Hwang-Pill Kim ◽  
...  

AbstractCeramics based on (Na1/2B1/2)TiO3 are promising candidates for actuator applications because of large strains generated by an electric field-induced phase transition. For example, the (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 system exhibits a morphotropic phase boundary at x = 0.2–0.3, leading to high values of inverse piezoelectric constant d*33, which can be further improved by the use of single crystals. In our previous work, single crystals of (Na1/2B1/2)TiO3-SrTiO3 and (Na1/2B1/2)TiO3-CaTiO3 were grown by the solid state crystal growth technique. Growth in the (Na1/2B1/2)TiO3-SrTiO3 system was sluggish whereas the (Na1/2B1/2)TiO3-CaTiO3 single crystals grew well. In the present work, 0.8(Na1/2Bi1/2)TiO3-0.2(Sr1−xCax)TiO3 single crystals (with x = 0.0, 0.1, 0.2, 0.3, 0.4) were produced by the solid state crystal growth technique in an attempt to improve crystal growth rate. The dependence of mean matrix grain size, single crystal growth distance, and electrical properties on the Ca concentration was investigated in detail. These investigations indicated that at x = 0.3 the matrix grain growth was suppressed and the driving force for single crystal growth was enhanced. Replacing Sr with Ca increased the shoulder temperature Ts and temperature of maximum relative permittivity Tmax, causing a decrease in inverse piezoelectric properties and a change from normal to incipient ferroelectric behavior.


CrystEngComm ◽  
2015 ◽  
Vol 17 (13) ◽  
pp. 2682-2689 ◽  
Author(s):  
Pascal Schouwink ◽  
Adrien Ramel ◽  
Enrico Giannini ◽  
Radovan Černý

Single crystals of mixed-metal perovskite-type borohydride KCa(BH4)3 are prepared by using an easily generalized flux melting procedure based on eutectic borohydride systems.


Molecules ◽  
2018 ◽  
Vol 23 (12) ◽  
pp. 3171 ◽  
Author(s):  
Soo Han Oh ◽  
Jae-Hyeon Ko ◽  
Ho-Yong Lee ◽  
Iwona Lazar ◽  
Krystian Roleder

The nature of precursor phenomena in the paraelectric phase of ferroelectrics is one of the main questions to be resolved from a fundamental point of view. Barium titanate (BaTiO3) is one of the most representative perovskite-structured ferroelectrics intensively studied until now. The pretransitional behavior of BaTiO3 single crystal grown using a solid-state crystal growth (SSCG) method was investigated for the first time and compared to previous results. There is no melting process in the SSCG method, thus the crystal grown using a SSCG method have inherent higher levels of impurity and defect concentrations, which is a good candidate for investigating the effect of crystal quality on the precursor phenomena. The acoustic, dielectric, and piezoelectric properties, as well as birefringence, of the SSCG-grown BaTiO3 were examined over a wide temperature range. Especially, the acoustic phonon behavior was investigated in terms of Brillouin spectroscopy, which is a complementary technique to Raman spectroscopy. The obtained precursor anomalies of the SSCG-grown BaTiO3 in the cubic phase were similar to those of other single crystals, in particular, of high-quality single crystal grown by top-seeded solution growth method. These results clearly indicate that the observed precursor phenomena are common and intrinsic effect irrespective of the crystal quality.


Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2357 ◽  
Author(s):  
Le ◽  
Fisher ◽  
Moon

The (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 (NBT-100xST) system is a possible lead-free candidate for actuator applications because of its excellent strain vs. electric field behaviour. Use of single crystals instead of polycrystalline ceramics may lead to further improvement in piezoelectric properties but work on single crystal growth in this system is limited. In particular, the effect of composition on single crystal growth has yet to be studied. In this work, single crystals of (NBT-100xST) with x = 0.00, 0.05, 0.10 and 0.20 were grown using the method of Solid State Crystal Growth. [001]-oriented SrTiO3 single crystal seeds were embedded in (NBT-100xST) ceramic powder, which was then pressed to form pellets and sintered at 1200 °C for 5 min–50 h. Single crystal growth rate, matrix grain growth rate and sample microstructure were examined using scanning and transmission electron microscopy. The results indicate that the highest single crystal growth rate was obtained at x = 0.20. The mixed control theory of grain growth is used to explain the single crystal and matrix grain growth behaviour.


1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.


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