TEM In-Situ Study of Dislocation Motion in B2 NiAl Single Crystals

1996 ◽  
Vol 460 ◽  
Author(s):  
B. Ghosh ◽  
M. A. Crimp
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Mechanical Response ◽  
Tensile Deformation ◽  
Dislocation Motion ◽  
Thermal Treatments ◽  
Commercially Pure ◽  
Transmission Electron ◽  
Uniform Manner

ABSTRACTIn an effort to understand dislocation mobility in stoichiometric NiAl single crystals, in-situ tensile deformation experiments have been performed in a transmission electron microscope. Commercially pure and high purity single crystals with <001> and <110> orientations have been examined. Two different thermal treatments were adopted in order to effect the mechanical response. Dislocation motion was observed in all samples. Pre-existing dislocations, either isolated or tangled, were not observed to move at any point leading up to sample failure. Cross-slip of the mobile dislocations was observed in some cases. In commercially pure single crystals, dislocations were found to move at a much slower rate and uniform manner in contrast to motion in high purity single crystals which occurs by rapid jumps.

In-Situ TEM Deformation Studies of Dislocation Generation and Motion in High-Purity MO Single Crystals

1999 ◽  
Vol 578 ◽  
Author(s):  
M. Jouiad ◽  
B. W. Lagow ◽  
I. M. Robertson ◽  
D. H. Lassila
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
High Purity ◽  
In Situ Tem ◽  
Dislocation Source ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Dislocation Tangle ◽  
Source Operation

AbstractThe generation and motion of dislocations in high-purity single crystals of Mo have been observed in real time by deforming electron-transparent samples in-situ in a transmission electron microscope. At 300 K and at low levels of stress, a novel dislocation source was observed that generated a long, straight screw dislocation. The source was a dislocation tangle that existed in the annealed material. An edge dislocation emerged from the tangle, trailing behind it the screw dislocation. These screw dislocations were immobile at this stress level. At higher stresses, the same dislocation tangle generated many dislocations, but now by a pole mechanism. The nature of these tangles and the source operation mechanisms will be described.

scholarly journals Development of a Nanoindenter for In Situ Transmission Electron Microscopy

2001 ◽  
Vol 7 (6) ◽  
pp. 507-517 ◽  
Author(s):  
Eric A. Stach ◽  
Tony Freeman ◽  
Andrew M. Minor ◽  
Doug K. Owen ◽  
John Cumings ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mechanical Response ◽  
Dislocation Motion ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Simultaneous Imaging ◽  
Technical Requirements ◽  
Transmission Electron

AbstractIn situ transmission electron microscopy is an established experimental technique that permits direct observation of the dynamics and mechanisms of dislocation motion and deformation behavior. In this article, we detail the development of a novel specimen goniometer that allows real-time observations of the mechanical response of materials to indentation loads. The technology of the scanning tunneling microscope is adopted to allow nanometer-scale positioning of a sharp, conductive diamond tip onto the edge of an electron-transparent sample. This allows application of loads to nanometer-scale material volumes coupled with simultaneous imaging of the material’s response. The emphasis in this report is qualitative and technique oriented, with particular attention given to sample geometry and other technical requirements. Examples of the deformation of aluminum and titanium carbide as well as the fracture of silicon will be presented.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals

2016 ◽  
Vol 49 (5) ◽  
pp. 1645-1652 ◽  
Author(s):  
Wanneng Ye ◽  
Lingli Tang ◽  
Chaojing Lu ◽  
Huabing Li ◽  
Yichun Zhou
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Observation ◽  
Transmission Electron

Five types of ferroelectric domain walls (DWs) are present in Bi4Ti3O12 single crystals (Ye et al., 2015). Here their motion was investigated in situ using transmission electron microscopy and optical microscopy. The motion of P (a)-90° DWs, P (a)-180° DWs and P (c)-180° DWs was observed through electron beam poling in a transmission electron microscope. The growth of new P s(a)-180° nanodomains was frequently seen and they tended to nucleate at preexisting P s(a)-90° DWs. Irregularly curved P (c)-180° DWs exhibit the highest mobility, while migration over a short range occurs occasionally for faceted P s(a)-90° DWs. In addition, the motion of P s(a)-90° DWs and the growth/annihilation of new needle-like P s(a)-90° domains in a 20 µm-thick crystal were observed under an external electric field on an optical microscope. Most of the new needle-like P s(a)-90° domains nucleate at preexisting P s(a)-90° DWs and the former are much smaller than the latter. This is very similar to the situation for P s(a)-180° domain switching induced by electron beam poling in a transmission electron microscope. Our observations suggest the energy hierarchy for different domains of P s(c)-180° ≤ P s(a)-180° ≤ P s(a)-90° ≤ new needle-like P s(a)-90° in ferroelectric Bi4Ti3O12.

Phase Transformations in the Fe-Al System Studied by “In-Situ” Tem Heating

1994 ◽  
Vol 364 ◽  
Author(s):  
A. Korner
Keyword(s):  
Transition Temperature ◽  
Single Crystal ◽  
Domain Structure ◽  
Type A ◽  
Bimodal Distribution ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Transmission Electron ◽  
The Matrix

AbstractThe domain structure and the evolution of antiphase boundaries (APBs) have been investigated in Fe-Al by means of “in-situ” transmission electron microscopy (TEM) heating experiments. Single crystals with composition Fe22.1at%Al and Fe25.6at%Al have been used.The grown-in structure of the Fe22.1at%al single crystal is composed of DO3 ordered particles embedded in the disorderd ±-matrix. A bimodal distribution of the particles was found. Small ordered particles are in between the large precipitates which are surrounded by particle-free zones. Numerous of this large ordered precipitates contain APBs. Crossing the transition temperature to the disordered phase, the small particles dissolve into the ±-matrix and the large particles start to shrink by dissolving.The single crystal with composition Fe25.6at%Al was found to be completely DO3 ordered. The grown-in domains are separated by APBs of type a′0/2〈100〉. At temperatures far below the transition temperature to the B2 phase no significant change in the APB and domain structure has been detected. In contrast, a remarkable evolution in the APB structure has been observed approaching the transition temperature. Coarsening of the domains has been found. Furthermore, APBs of B2-type (a′0/4〈lll〉 shear) are dragged out by dislocation motion. B2- and DC3-type APBs react and junctions are formed. With increasing annealing time, the density of B2-type boundaries increases. The TEM image is dominated by B2-type boundaries linked by the D03-type boundaries. The DO3 superlattice spots are clearly excited approaching the transition temperature to B2. Above the transition temperature, the DO3 spots disappear completely and the diffraction pattern reveals B2 long range order.

Effect of boron on the mechanism of strain transfer across grain boundaries in Ni3Al

1987 ◽  
Vol 2 (4) ◽  
pp. 436-440 ◽  
Author(s):  
G. M. Bond ◽  
I. M. Robertson ◽  
H. K. Birnbaum
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Dislocation Motion ◽  
Strain Transfer ◽  
Undoped Material ◽  
Sudden Failure ◽  
Transmission Electron ◽  
Large Numbers ◽  
Dislocation Sources

The effect of boron on the mechanism of strain transfer across grain boundaries in Ni3Al has been investigated by dynamic recording of events occurring during in-situ straining in the transmission electron microscope. Boundaries in both doped and undoped material can act as effective barriers to dislocation motion, large numbers of dislocations being incorporated into the boundary without any plastic strain occurring in the adjacent grain. In the undoped material, the grain-boundary strain is relieved by the sudden failure of the grain boundary. In the doped material the strain is relieved by the sudden generation and emission of large numbers of dislocations from the grain boundary. This effect may be understood by boron either increasing the grain-boundary cohesion or reducing the stress required to operate grain-boundary dislocation sources, rather than easing the passage of slip dislocations through the grain boundary.

Ion-Beam Amortization of Ca2La2(SiO4)6O2 Single Crystals

1992 ◽  
Vol 279 ◽  
Author(s):  
William J. Weber ◽  
Lu-Min Wang
Keyword(s):  
Electron Microscopy ◽  
Single Crystals ◽  
Structural Changes ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Annealing Process ◽  
Recoil Energy ◽  
Transmission Electron

ABSTRACTSingle crystals of Ca2La8(SiO4)6O2 were irradiated with 1.5 MeV Xe+, 1.5 MeV Kr+, 1.0 MeV Ar+ and 0.8 MeV Ne+ ions to investigate the effects of recoil-energy spectrum, temperature, and crystallographic orientation on irradiation-induced amorphization. The irradiations were carried out using the HVEM-Tandem Facility at Argonne National Laboratory. The structural changes and the ion fluence for complete amorphization in the electron transparent thickness of the specimens were determined by in situ transmission electron microscopy. The displacement dose determined for complete amorphization was approximately 0.6 dpa for the Xe+, Kr+, and Ar+ ion irradiations but increased to 1.4 dpa for the Ne+ ion irradiations, which may reflect an effect of lower recoil energies. The ion fluence for complete amorphization increased exponentially with temperature over the range from 25 to 400°C. Amorphization was not observed at 500°C. The activation energy associated with this simultaneous annealing process was estimated to be 0.13 eV, and the critical amorphization temperature was estimated to be 438°C for the 1.5 MeV Kr+ irradiations.

Internal Friction in Plastically Deformed High-Purity NiAl Single Crystals

1998 ◽  
Vol 552 ◽  
Author(s):  
M. Hirscher ◽  
D. Schaible
Keyword(s):  
Internal Friction ◽  
Single Crystals ◽  
High Purity ◽  
Formation Enthalpy ◽  
Dislocation Motion ◽  
Zone Melting ◽  
Interstitial Impurity ◽  
Impurity Atoms ◽  
Kink Pair ◽  
Friction Measurements

ABSTRACTHigh-purity stoichiometric NiAl single crystals have been prepared by crucible-free inductive zone melting and afterwards well annealed at temperatures below 1200 K. Internal friction measurements of torsionally deformed single crystals show two relaxation maxima at 500 and 800 K which anneal during the measurement. The first maximum can be assigned to the dislocation motion by kinkpair formation and the annealing to pinning of these dislocations by interstitial impurity atoms. The second maximum is attributed to the Snoek-Köster relaxation of dislocations in the presence of mobile interstitial impurity atoms and the annealing to the pinning of dislocations by vacancies. The kink-pair formation enthalpy in NiAl was estimated.

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