scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

scholarly journals Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 859 ◽  
Author(s):  
Wei-Kai Wang ◽  
Kuo-Feng Liu ◽  
Pi-Chuen Tsai ◽  
Yi-Jie Xu ◽  
Shih-Yung Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Average Crystallite Size ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atmospheric Conditions

Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Kobayashi ◽  
S. Nonomura ◽  
K. Abe ◽  
T. Gotoh ◽  
S. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Field Effect ◽  
Annealing Treatment ◽  
Drain Current ◽  
Localized States ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Nano Crystalline ◽  
Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

Effects of Annealing Treatment on WO3 Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 248-250 ◽  
Author(s):  
Thanat Srichaiyaperk ◽  
Kamon Aiempanakit ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Reactive Magnetron ◽  
Thin Film Thickness ◽  
Dc Reactive Magnetron Sputtering

Tungsten trioxide (WO3) thin films were prepared by a DC reactive magnetron sputtering technique. The thin film fabrication process used tungsten (99.995%) as the sputtering target, the mixture of argon and oxygen as sputtering and reactive gases, and silicon (100) and glass slides as the substrates. The effects of annealing temperature in the range of 200-400°C on physical and optical properties of the WO3 thin films were investigated. The nanostructures and morphologies of these films were characterized by grazing-incident X-ray diffraction (GIXRD) and field-emission scanning electron microscopy (FE-SEM). The optical properties were analyzed by variable-angle spectroscopic ellipsometry (VASE) and spectrophotometer. From the XRD results, the as-deposited and annealed WO3 thin films up to 300°C were all amorphous. Only the WO3 thin film annealed at 400°C exhibited a polycrystalline monoclinic phase. The FE-SEM cross-sections and surface topologies demonstrated nearly identical thin-film thickness and physical grain sizes. The SE analyses showed that the thin films were all homogeneous dense layers with additional surface roughness. With the annealing treatment, the thin film thickness was slightly decreased. The SE physical model was best optimized with the Cauchy optical model. The results showed that the refractive index at 550 nm was increased from 2.17 to 2.23 with the increased annealing temperature. The results from the spectrophotometer confirmed that the optical spectra for the WO3 thin films were decreased. This study demonstrated that, the thin film annealed at 400°C exhibited the slightly lower transparency, which corresponded to the results from the GIXRD and SE analyses.

Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi4Ti3Oi2 Thin Films by Multiple Rapid Thermal Annealing Techniques

2004 ◽  
Vol 830 ◽  
Author(s):  
Hua. Wang ◽  
Minfang Ren
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Temperature Increase ◽  
Si Substrates ◽  
Surface Increase

AbstractFerroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

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