Compositional Effects on the Degradation of PVD-Tisin

1997 ◽  
Vol 472 ◽  
Author(s):  
W.F. McArthur ◽  
F. Deng ◽  
K. Ring ◽  
P.M. Pattison ◽  
K.L. Kavanagh
Keyword(s):  
Phase Separation ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Titanium Nitride ◽  
Thermal History ◽  
Amorphous Matrix ◽  
Rutherford Back Scattering ◽  
Phase Line ◽  
Back Scattering ◽  
Target Ratio

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μΩ2-cm) is acceptable for use as a contact liner/berrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

Compositional Effects on the Degradation of PVD-Tisin

1997 ◽  
Vol 473 ◽  
Author(s):  
W. F. McArthur ◽  
F. Deng ◽  
K. Ring ◽  
P. M. Pattison ◽  
K. L. Kavanagh
Keyword(s):  
Phase Separation ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Titanium Nitride ◽  
Amorphous Matrix ◽  
Barrier Material ◽  
Rutherford Back Scattering ◽  
Phase Line ◽  
Back Scattering ◽  
Target Ratio

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μω-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

Stereo-chemical contributions to the glass transition and liquid–liquid phase separation in high molecular weight poly(N-vinyl carbazole)

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29326-29333 ◽  
Author(s):  
Abdul G. Al Lafi ◽  
James N. Hay
Keyword(s):  
Molecular Weight ◽  
Glass Transition ◽  
Phase Separation ◽  
Liquid Phase ◽  
High Molecular Weight ◽  
Structural Properties ◽  
Thermal History ◽  
Liquid Phase Separation ◽  
High Molecular Weight Poly ◽  
Liquid Liquid Phase Separation

Thermal history and purification effects on the structural properties of PVK were investigated. Liquid–liquid phase separation is suggested to occur by separation of isotactic rich segments from a matrix which is predominantly atactic.

Effects of ion beam bombardment on electrochromic tungsten oxide films studied by X-ray photoelectron spectroscopy and Rutherford back-scattering

2000 ◽  
Vol 376 (1-2) ◽  
pp. 131-139 ◽  
Author(s):  
H.Y. Wong ◽  
C.W. Ong ◽  
R.W.M. Kwok ◽  
K.W. Wong ◽  
S.P. Wong ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Oxide Films ◽  
Rutherford Back Scattering ◽  
X Ray ◽  
Back Scattering

Carbon Nanotubes Grown on Metallic Wires by Cold Plasma Technique

2002 ◽  
Vol 737 ◽  
Author(s):  
D. Sarangi ◽  
A. Karimi
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Growth Conditions ◽  
Effect Of Temperature ◽  
Rutherford Back Scattering ◽  
Novel Approach ◽  
Transmission Electron ◽  
Back Scattering ◽  
Metallic Wires ◽  
Metal Wires

ABSTRACTCarbon nanotubes on metallic wires may be act as electrode for the field emission (FE) luminescent devices. Growing nanotubes on metallic wires with controlled density, length and alignment are challenging issues for this kind of devices. We, in the present investigation grow carbon nanotubes directly on the metal wires by a powerful but simple technique. A novel approach has been proposed to align nanotubes during growth. Methane, acetylene and dimethylamine have been used as source gases. With the same growth conditions (viz. pressure, growth temperature and plasma) methane does not produce any nanotube but nanotubes grown with dimethylamine show shorter length and radius than acetylene. The effect of temperature to control the radius, time to control the density, plasma conditions to align the nanotubes has been focused. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Back Scattering (RBS) are used to characterize the nanotubes.

Interaction of Copper Film with Silicides

1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Copper Film ◽  
Furnace Annealing ◽  
Rutherford Back Scattering ◽  
Annealing Temperatures ◽  
Back Scattering ◽  
The Stability ◽  
Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

Interplay of crystallization and liquid–liquid phase separation in polyolefin blends: A thermal history dependence study

Polymer ◽  
2007 ◽  
Vol 48 (14) ◽  
pp. 4226-4234 ◽  
Author(s):  
Katsumi Shimizu ◽  
Howard Wang ◽  
Go Matsuba ◽  
Zhigang Wang ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Phase Separation ◽  
Liquid Phase ◽  
Thermal History ◽  
Liquid Phase Separation ◽  
History Dependence ◽  
Polyolefin Blends ◽  
Liquid Liquid Phase Separation

Microstructure development in furfuryl resin-derived microporous glassy carbons

1996 ◽  
Vol 11 (9) ◽  
pp. 2338-2345 ◽  
Author(s):  
Kristen Persels Constant ◽  
Jonq-Ren Lee ◽  
Yet-Ming Chiang
Keyword(s):  
Phase Separation ◽  
Ethylene Glycol ◽  
Glassy Carbon ◽  
Thermal History ◽  
Liquid State ◽  
Furfuryl Alcohol ◽  
Time Dependent ◽  
Miscibility Gap ◽  
Microstructure Development

The processing of microporous glassy carbon derived from furfuryl alcohol and ethylene glycol mixtures has been studied, with emphasis on understanding and controlling microstructure development. It is shown that this system exhibits a polymerization-dependent miscibility gap, and that the carbon microstructure is determined by phase separation in the liquid state. Variations in carbon microstructure with composition and thermal history can be understood in terms of the time-dependent immiscibility and resulting phase separation.

scholarly journals RUTHERFORD BACK SCATTERING USING HEAVY ION BEAMS

2020 ◽  
Vol 2 ◽  
pp. 229
Author(s):  
X. Aslanoglou ◽  
M. Pilakouta ◽  
P. Aloupogiannis ◽  
A. Travlos
Keyword(s):  
Heavy Ion ◽  
Ion Beams ◽  
Rutherford Back Scattering ◽  
Back Scattering

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