New Generations of Position Sensitive Silicon Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
P. Burger ◽  
M. Keters ◽  
L. Van Buul ◽  
J. Verplancke
Keyword(s):  
Nuclear Physics ◽  
High Energy Physics ◽  
Dynamic Range ◽  
High Energy ◽  
Silicon Detectors ◽  
Integrated Electronics ◽  
Pixel Detectors ◽  
Space Experiments ◽  
Position Sensitive ◽  
New Generation

AbstractThe new generation of elementary particle and nuclear physics experiments demand instrumentation with a more precise spatial resolution and a better and faster energy response. Nuclear physics and space experiments need position sensitive pad detectors having very thin entrance windows while high energy physics and medical applications use fast microstrip or drift detectors. Silicon pixel detectors can be improved by implementing integrated electronics on it. They allow a better X-ray energy resolution and are also used in hybrid photocathode tubes for faster timing and larger dynamic range.

Detector commissioning and development for PETRA-III

2010 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
David Pennicard ◽  
Heinz Graafsma ◽  
Michael Lohmann
Keyword(s):  
High Speed ◽  
Materials Science ◽  
Dynamic Range ◽  
Photon Counting ◽  
High Energy ◽  
X Rays ◽  
Silicon Detectors ◽  
Time Resolved ◽  
Wide Range ◽  
Synchrotron Light

The new synchrotron light source PETRA-III produced its first beam last year. The extremely high brilliance of PETRA-III and the large energy range of many of its beamlines make it useful for a wide range of experiments, particularly in materials science. The detectors at PETRA-III will need to meet several requirements, such as operation across a wide dynamic range, high-speed readout and good quantum efficiency even at high photon energies. PETRA-III beamlines with lower photon energies will typically be equipped with photon-counting silicon detectors for two-dimensional detection and silicon drift detectors for spectroscopy and higher-energy beamlines will use scintillators coupled to cameras or photomultiplier tubes. Longer-term developments include ‘high-Z’ semiconductors for detecting high-energy X-rays, photon-counting readout chips with smaller pixels and higher frame rates and pixellated avalanche photodiodes for time-resolved experiments.

scholarly journals Pixel detectors in 3D technologies for high energy physics

2010 ◽  
Author(s):  
G. Deptuch ◽  
M. Demarteau ◽  
J. Hoff ◽  
R. Lipton ◽  
A. Shenai ◽  
...  
Keyword(s):  
High Energy Physics ◽  
High Energy ◽  
Pixel Detectors ◽  
Energy Physics

scholarly journals Wafer Level Packaging Technology Applied to Pixel Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
Paolo Conci ◽  
Giovanni Darbo ◽  
Andrea Gaudiello ◽  
Claudia Gemme ◽  
Stefano Girardi ◽  
...  
Keyword(s):  
High Energy Physics ◽  
High Energy ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Technical Requirements ◽  
Pixel Detectors ◽  
Single Sensor ◽  
Wafer Processing ◽  
Wafer Level Package ◽  
Energy Physics

Pixel technology is commonly used in the tracking systems of High Energy Physics detectors with physical areas that have largely increased in the last decades. To ease the production of several square meters of sensitive area, the possibility of using the industrial Wafer Level Packaging to reassemble good single sensor tiles from multiple wafers into a reconstructed full wafer is investigated. This process reconstructs wafers by compression molding using silicon charged epoxy resin. We tested high glass transition temperature low-stress epoxy resins filled with silica particles to best match the thermal expansion of the silicon die. These resins are developed and characterized for industrial processes, designed specifically for fan-out wafer-level package and panel-level packaging. In order to be compatible with wafer processing during the hybridization of the pixel detectors, such as the bump-bonding, the reconstructed wafer must respect challenging technical requirements. Wafer planarity, tile positioning accuracy, and overall thickness are amongst the main ones. In this paper the description of the process is given and preliminary results on a few reconstructed wafers using dummy tiles are reported. Strategies for Wafer Level Packaging improvements are discussed together with future applications to 3D sensors or CMOS pixel detectors.

scholarly journals Editorial

2021 ◽  
Vol 5 (1) ◽  
pp. 1-5
Author(s):  
Editorial team
Keyword(s):  
Energy Efficiency ◽  
Nuclear Physics ◽  
Alternative Energy ◽  
High Energy Physics ◽  
Functional Materials ◽  
High Energy ◽  
Energy Sources ◽  
New Energy ◽  
High Technologies ◽  
Energy Physics

Eurasian Journal of Physics and Functional Materials is an international journal published 4 numbers per year starting from October 2017. The aim of the journal is rapid publication of original articles and rewiews in the following areas: nuclear physics, high energy physics, radiation ecology, alternative energy (nuclear and hydrogen, photovoltaic, new energy sources, energy efficiency and energy saving, the energy sector impact on the environment), functional materials and related problems of high technologies.

TCAD simulations of non-irradiated and irradiated low-gain avalanche diodes and comparison with measurements

2022 ◽  
Vol 17 (01) ◽  
pp. C01022
Author(s):  
T. Croci ◽  
A. Morozzi ◽  
F. Moscatelli ◽  
V. Sola ◽  
G. Borghi ◽  
...  
Keyword(s):  
Experimental Data ◽  
High Energy Physics ◽  
Signal To Noise Ratio ◽  
Damage Model ◽  
Surface Damage ◽  
High Energy ◽  
Silicon Detectors ◽  
Avalanche Diodes ◽  
Silicon Sensors ◽  
Energy Physics

Abstract In this work, the results of Technology-CAD (TCAD) device-level simulations of non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors and their validation against experimental data will be presented. Thanks to the intrinsic multiplication of the charge within these silicon sensors, it is possible to improve the signal to noise ratio thus limiting its drastic reduction with fluence, as it happens instead for standard silicon detectors. Therefore, special attention has been devoted to the choice of the avalanche model, which allows the simulation findings to better fit with experimental data. Moreover, a radiation damage model (called “New University of Perugia TCAD model”) has been fully implemented within the simulation environment, to have a predictive insight into the electrical behavior and the charge collection properties of the LGAD detectors, up to the highest particle fluences expected in the future High Energy Physics (HEP) experiments. This numerical model allows to consider the comprehensive bulk and surface damage effects induced by radiation on silicon sensors. By coupling the “New University of Perugia TCAD model” with an analytical model that describes the mechanism of acceptor removal in the multiplication layer, it has been possible to reproduce experimental data with high accuracy, demonstrating the reliability of the simulation framework.

Radiation hardness of silicon detectors for high-energy physics applications

2003 ◽  
Vol 50 (4) ◽  
pp. 1121-1128 ◽  
Author(s):  
A. Candelori ◽  
D. Bisello ◽  
R. Rando ◽  
A. Kaminski ◽  
J. Wyss ◽  
...  
Keyword(s):  
High Energy Physics ◽  
High Energy ◽  
Radiation Hardness ◽  
Silicon Detectors ◽  
Energy Physics
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