Study on Deep Level Traps in P-Hgcdte With Dltfs

1997 ◽  
Vol 487 ◽  
Author(s):  
S. Kawata ◽  
I. Sugiyama ◽  
N. Kajihara ◽  
Y. Miyamoto
Keyword(s):  
Signal Intensity ◽  
Carrier Density ◽  
Deep Level ◽  
The Other ◽  
Fourier Spectroscopy ◽  
Cooling Cycle ◽  
Monotonic Increase ◽  
Impurity Complex ◽  
The Stability ◽  
P Type

AbstractWe studied the characteristics of deep-level traps in p-type HgCdTe diodes using the Deep Level Transient Fourier Spectroscopy (DLTFS) method. For both holes and electrons, two types of traps were observed. The DLTFS signal intensity of one type of trap increased with the carrier density in the HgCdTe, while the other did not exhibit a monotonic increase. While measuring the stability of these traps during cooling cycles, the DLTFS signal intensity of the first group was almost constant while that of the latter fluctuated with every cooling cycle. Stable traps originated from Hg vacancies, unstable traps are attributed to vacancy-impurity complex defects.

Study on Deep Level Traps in p-HgCdTe With Dltfs

1997 ◽  
Vol 484 ◽  
Author(s):  
S. Kawata ◽  
I. Sugiyama ◽  
N. Kajihara ◽  
Y. Miyamoto
Keyword(s):  
Signal Intensity ◽  
Carrier Density ◽  
Deep Level ◽  
The Other ◽  
Fourier Spectroscopy ◽  
Cooling Cycle ◽  
Monotonic Increase ◽  
Impurity Complex ◽  
The Stability ◽  
P Type

AbstractWe studied the characteristics of deep-level traps in p-type HgCdTe diodes using the Deep Level Transient Fourier Spectroscopy (DLTFS) method. For both holes and electrons, two types of traps were observed. The DLTFS signal intensity of one type of trap increased with the carrier density in the HgCdTe, while the other did not exhibit a monotonic increase. While measuring the stability of these traps during cooling cycles, the DLTFS signal intensity of the first group was almost constant while that of the latter fluctuated with every cooling cycle. Stable traps originated from Hg vacancies, unstable traps are attributed to vacancy-impurity complex defects.

Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals

1985 ◽  
Vol 59 ◽  
Author(s):  
T. Abe ◽  
H. Harada ◽  
N. Ozawa ◽  
K. Adomi
Keyword(s):  
Diffusion Coefficient ◽  
Deep Level ◽  
Isotope Effects ◽  
Nitrogen Isotope ◽  
Deep Levels ◽  
The Other ◽  
Silicon Isotope ◽  
Migration Energy ◽  
Nitrogen Doped ◽  
P Type

ABSTRACTNitrogen atoms exist in silicon as non-reactive nitrogen molecules. This is concluded from two I-R absorption experiments: one is the nitrogen isotope effects on N- N pairs and the other is silicon isotope shifts at 10 K. Intrinsic resistivities (over 20 K ohm-cm) are obtained by annealing at 1000°C, 1 min. in N2 in both p- and n-type nitrogen doped thin wafers. Resistivity increases are due to deep- level generations: 0.66 eV above the valence band for p-type and mainly 0.44 eV below the conduction band for n-type material. These deep levels are considered to be formed by nitrogen pairs and divacancies which are incorporated during growth. Since divacancies are easy to out diffuse to the wafers surface, the deep levels are also irreversibly removed. Diffusion coefficient of Si intersititialswici'ch are annihilated with divacancies in the lattice are calculated as 6×10−6cm2/s and 2×10−6cm2/s at 900°C and 1000°C respectively. Migration energy of Si interstitials is about 4.5 eV.

Interface Defects and Rectification Properties of Heterojunctions Between Solid C60 and GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
K.M. Chen ◽  
Y.X. Zhang ◽  
S.X. Jin ◽  
K. Wu ◽  
H.F. Liu
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Electron Trap ◽  
The Other ◽  
Vacuum Deposition ◽  
Interface Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
C60 Films

AbstractSolid C60/GaAs contacts were fabricated by growing solid C60 films on both n-type and p-type GaAs(100) substrates through vacuum deposition. The electronic states at C60/GaAs interfaces were studied. Both C60/n-GaAs and C60/p-GaAs contacts were found to be strong rectification junctions with a rectifying ratio higher than 106 at a bias of ± 1.OV. Two distinct traps were also observed at the C60/GaAs interfaces with deep level transient spectroscopy (DLTS); one is the electron trap at 0.35 eV below the GaAs conduction band and the other is a hole trap at 0.45 eV above the GaAs valence band.

Uniformity of Magnification from Different Electron Microscopes

1967 ◽  
Vol 25 ◽  
pp. 32-33
Author(s):  
Godfrey C. Hoskins ◽  
V. Williams ◽  
V. Allison
Keyword(s):  
Diffraction Grating ◽  
The Other ◽  
Carbon Replica ◽  
Electron Microscopes ◽  
The Stability

The method demonstrated is an adaptation of a proven procedure for accurately determining the magnification of light photomicrographs. Because of the stability of modern electrical lenses, the method is shown to be directly applicable for providing precise reproducibility of magnification in various models of electron microscopes.A readily recognizable area of a carbon replica of a crossed-line diffraction grating is used as a standard. The same area of the standard was photographed in Phillips EM 200, Hitachi HU-11B2, and RCA EMU 3F electron microscopes at taps representative of the range of magnification of each. Negatives from one microscope were selected as guides and printed at convenient magnifications; then negatives from each of the other microscopes were projected to register with these prints. By deferring measurement to the print rather than comparing negatives, correspondence of magnification of the specimen in the three microscopes could be brought to within 2%.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

scholarly journals Black Hole Algorithm for Sustainable Design of Counterfort Retaining Walls

2020 ◽  
Vol 12 (7) ◽  
pp. 2767 ◽  
Author(s):  
Víctor Yepes ◽  
José V. Martí ◽  
José García
Keyword(s):  
Black Hole ◽  
Sustainable Design ◽  
Retaining Walls ◽  
The Other ◽  
Trade Off ◽  
Construction Company ◽  
Geometric Variables ◽  
The Stability ◽  
The Cost ◽  
Black Hole Algorithm

The optimization of the cost and CO 2 emissions in earth-retaining walls is of relevance, since these structures are often used in civil engineering. The optimization of costs is essential for the competitiveness of the construction company, and the optimization of emissions is relevant in the environmental impact of construction. To address the optimization, black hole metaheuristics were used, along with a discretization mechanism based on min–max normalization. The stability of the algorithm was evaluated with respect to the solutions obtained; the steel and concrete values obtained in both optimizations were analyzed. Additionally, the geometric variables of the structure were compared. Finally, the results obtained were compared with another algorithm that solved the problem. The results show that there is a trade-off between the use of steel and concrete. The solutions that minimize CO 2 emissions prefer the use of concrete instead of those that optimize the cost. On the other hand, when comparing the geometric variables, it is seen that most remain similar in both optimizations except for the distance between buttresses. When comparing with another algorithm, the results show a good performance in optimization using the black hole algorithm.

scholarly journals A Fractional SAIDR Model in the Frame of Atangana–Baleanu Derivative

2021 ◽  
Vol 5 (2) ◽  
pp. 32
Author(s):  
Esmehan Uçar ◽  
Sümeyra Uçar ◽  
Fırat Evirgen ◽  
Necati Özdemir
Keyword(s):  
Existence And Uniqueness ◽  
Laplace Transformation ◽  
Cell Phones ◽  
Mobile Network ◽  
The Other ◽  
Banach Fixed Point Theorem ◽  
Propagation Models ◽  
Computer Worms ◽  
Computer Viruses ◽  
The Stability

It is possible to produce mobile phone worms, which are computer viruses with the ability to command the running of cell phones by taking advantage of their flaws, to be transmitted from one device to the other with increasing numbers. In our day, one of the services to gain currency for circulating these malignant worms is SMS. The distinctions of computers from mobile devices render the existing propagation models of computer worms unable to start operating instantaneously in the mobile network, and this is particularly valid for the SMS framework. The susceptible–affected–infectious–suspended–recovered model with a classical derivative (abbreviated as SAIDR) was coined by Xiao et al., (2017) in order to correctly estimate the spread of worms by means of SMS. This study is the first to implement an Atangana–Baleanu (AB) derivative in association with the fractional SAIDR model, depending upon the SAIDR model. The existence and uniqueness of the drinking model solutions together with the stability analysis are shown through the Banach fixed point theorem. The special solution of the model is investigated using the Laplace transformation and then we present a set of numeric graphics by varying the fractional-order θ with the intention of showing the effectiveness of the fractional derivative.

scholarly journals Competing Conventions with Costly Information Acquisition

Games ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 53
Author(s):  
Roberto Rozzi
Keyword(s):  
Information Acquisition ◽  
Evolutionary Model ◽  
Equilibrium Selection ◽  
The Other ◽  
Group Interactions ◽  
Social Coordination ◽  
Long Run ◽  
Stochastic Stability Analysis ◽  
The Stability ◽  
The Cost

We consider an evolutionary model of social coordination in a 2 × 2 game where two groups of players prefer to coordinate on different actions. Players can pay a cost to learn their opponent’s group: if they pay it, they can condition their actions concerning the groups. We assess the stability of outcomes in the long run using stochastic stability analysis. We find that three elements matter for the equilibrium selection: the group size, the strength of preferences, and the information’s cost. If the cost is too high, players never learn the group of their opponents in the long run. If one group is stronger in preferences for its favorite action than the other, or its size is sufficiently large compared to the other group, every player plays that group’s favorite action. If both groups are strong enough in preferences, or if none of the groups’ sizes is large enough, players play their favorite actions and miscoordinate in inter-group interactions. Lower levels of the cost favor coordination. Indeed, when the cost is low, in inside-group interactions, players always coordinate on their favorite action, while in inter-group interactions, they coordinate on the favorite action of the group that is stronger in preferences or large enough.

Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

2007 ◽  
Vol 253 (8) ◽  
pp. 3825-3827 ◽  
Author(s):  
Zhang Xiaodan ◽  
Fan Hongbing ◽  
Zhao Ying ◽  
Sun Jian ◽  
Wei Changchun ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Co Doping ◽  
P Type

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

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