Retention Studies on Ferroelectric Media for High Data Storage Application

1997 ◽  
Vol 493 ◽  
Author(s):  
I. K. Yoo ◽  
B. M. Kim ◽  
D. S. Kim ◽  
S. J. Park
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Single Electron Transistor ◽  
Data Retention ◽  
Ferroelectric Capacitor ◽  
High Data ◽  
Potential Variation ◽  
Highly Sensitive ◽  
Local Polarization ◽  
Domain Stabilization

ABSTRACTData retention may be affected by depolarization, domain stabilization (ageing or imprint), and fuzzy electric field among neighboring bits in relation to microstructures of ferroelectric media. In this paper, the smearing effect due to electric field between two adjacent bits was demonstrated. In order to minimize the smearing effect, ferroelectric media with the top electrode is proposed by which fuzzy electric field can be screened by bound charges in the electrode. Bit on electrode (BOE) technique was suggested for “Write” (local polarization) and “Read” on ferroelectric media with the top electrode (ferroelectric capacitor). It is noticed that a highly sensitive device such as single electron transistor is indispensable for measuring potential variation in the top electrode of the ferroelectric capacitor media.

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Electric‐Field‐Induced Gradient Ionogels for Highly Sensitive, Broad‐Range‐Response, and Freeze/Heat‐Resistant Ionic Fingers

2021 ◽  
Vol 33 (12) ◽  
pp. 2008486
Author(s):  
Yongyuan Ren ◽  
Ziyang Liu ◽  
Guoqing Jin ◽  
Mengke Yang ◽  
Yizhe Shao ◽  
...  
Keyword(s):  
Electric Field ◽  
Heat Resistant ◽  
Highly Sensitive

Miniature Two-Axis Actuator for High-Data-Transfer-Rate Optical Data Storage System

2002 ◽  
Vol 41 (Part 1, No. 3B) ◽  
pp. 1804-1807 ◽  
Author(s):  
Gakuji Hashimoto ◽  
Hiroki Shima ◽  
Kenji Yamamoto ◽  
Tsutomu Maruyama ◽  
Takashi Nakao ◽  
...  
Keyword(s):  
Data Storage ◽  
Transfer Rate ◽  
Data Transfer ◽  
Storage System ◽  
Optical Data Storage ◽  
Optical Data ◽  
Data Transfer Rate ◽  
High Data ◽  
Data Storage System

Electric field-modulated data storage in bilayer InSe

2017 ◽  
Vol 5 (46) ◽  
pp. 12228-12234 ◽  
Author(s):  
Xuhui Yang ◽  
Baisheng Sa ◽  
Hongbing Zhan ◽  
Zhimei Sun
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Storage Device ◽  
Vertical Electric Field

A vertical electric field-modulated data storage device based on bilayer InSe.

Synergetic polarization effect of protonation and Fe-doping on g-C3N4 with enhanced photocatalytic activity

2021 ◽  
Author(s):  
Xiaogang Liu ◽  
Wenjie Chen ◽  
Wei Wang ◽  
Zhengbo Jiao
Keyword(s):  
Photocatalytic Activity ◽  
Electric Field ◽  
Polarization Effect ◽  
Charge Carriers ◽  
Fe Doping ◽  
Polarization Electric Field ◽  
Local Polarization

The local polarization electric field resulting from protonation and Fe-doping in g-C3N4 can be formed, thus highly facilitating the separation and transport of charge carriers and boosting the photocatalytic activity.

scholarly journals Theoretical Study of a Surface Collinear Holographic Memory

Photonics ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 70
Author(s):  
Hirayama ◽  
Fujimura ◽  
Umegaki ◽  
Tanaka ◽  
Shimura
Keyword(s):  
Data Storage ◽  
Transfer Rate ◽  
Data Transfer ◽  
Coefficient Of Thermal Expansion ◽  
Storage System ◽  
Reconstructed Image ◽  
Data Transfer Rate ◽  
Holographic Memory ◽  
High Data ◽  
Volume Holograms

Holographic memory is currently attracting attention as a data storage system capable of achieving a data transfer rate of about 105~106105~106 times that of an optical disc such as Blu-ray disc. In conventional holographic memory, data is generally recorded by optical writing using volume holograms. However, a volume hologram has the problem not only that it is required to have high mechanical accuracy of a system and low coefficient of thermal expansion of a recording medium, because reconstruction tolerance is extremely low, but also that duplicating time efficiency is poor because whole data cannot be recorded at once. In this paper we proposed surface holographic memory that achieved a high data transfer rate, stable readout performance, and collective duplication by expressing holograms with fine surface asperity. Furthermore, the theoretical formulas of recording and reconstruction processes in the proposed system were derived and the reconstruction characteristics of the hologram were evaluated by numerical simulation. As a result, the proposed method generated reconstructed image readout with sufficient signal for a single page recording. However, the reconstructed image had noise, which was particular to a surface holographic memory.

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