Electric field-modulated data storage in bilayer InSe

2017 ◽  
Vol 5 (46) ◽  
pp. 12228-12234 ◽  
Author(s):  
Xuhui Yang ◽  
Baisheng Sa ◽  
Hongbing Zhan ◽  
Zhimei Sun
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Storage Device ◽  
Vertical Electric Field

A vertical electric field-modulated data storage device based on bilayer InSe.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

2020 ◽  
Vol 22 (9) ◽  
pp. 5163-5169 ◽  
Author(s):  
Fu-Bao Zheng ◽  
Liang Zhang ◽  
Jin Zhang ◽  
Pei-ji Wang ◽  
Chang-Wen Zhang
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Data Storage ◽  
Carrier Mobility ◽  
Electronic Devices ◽  
Storage Device ◽  
New Type ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Opening Up

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.

Determination of the Size of an Imaging Data Storage Device at a Full PACS Hospital

2000 ◽  
Vol 42 (4) ◽  
pp. 705
Author(s):  
Soon Joo Cha ◽  
Yong Hoon Kim ◽  
Gham Hur
Keyword(s):  
Data Storage ◽  
Storage Device ◽  
Imaging Data

Perangkat keras komputer

2020 ◽  
Author(s):  
Roudati jannah
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Perangkat keras komputer adalah bagian dari sistem komputer sebagai perangkat yang dapat diraba, dilihat secara fisik, dan bertindak untuk menjalankan instruksi dari perangkat lunak (software). Perangkat keras komputer juga disebut dengan hardware. Hardware berperan secara menyeluruh terhadap kinerja suatu sistem komputer. Prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras premprosesan (processing/central processing unit) – perangkat keras luaran (output/output device system) – perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (storage device system/external memory).

Perangkat lunak komputer

2020 ◽  
Author(s):  
Intan khadijah simatupang
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Komputer adalah serangkaian mesin elektronik yang terdiri dari jutaan komponen yang dapat saling bekerja sama, serta membentuk sebuah sistem kerja yang rapi dan teliti. Sistem ini kemudian digunakan untuk dapat melaksanakan pekerjaan secara otomatis, berdasarkan instruksi (program) yang diberikan kepadanya. Istilah Hardware computer atau perangkat keras komputer, merupakan benda yang secara fisik dapat dipegang, dipindahkan dan dilihat. Software komputer atau perangkat lunak komputer merupakan kumpulan instruksi (program/prosedur) untuk dapat melaksanakan pekerjaan secara otomatis dengan cara mengolah atau memproses kumpulan instruksi (data) yang diberikan. Pada prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras pemprosesan (processing/ central processing unit) – perangkat keras keluaran (output/output device system), perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (Storage device system/external memory).

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals Focused Patterning of Electrospun Nanofibers Using a Dielectric Guide Structure

Polymers ◽  
2021 ◽  
Vol 13 (9) ◽  
pp. 1505
Author(s):  
Byeongjun Lee ◽  
Younghyeon Song ◽  
Chan Park ◽  
Jungmin Kim ◽  
Jeongbeom Kang ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Finite Elements ◽  
Electric Field ◽  
Electrospun Nanofibers ◽  
Electrospun Fibers ◽  
Continuous Line ◽  
Key Factors ◽  
Key Technology ◽  
Vertical Electric Field ◽  
Dielectric Guide

The patterning of electrospun fibers is a key technology applicable to various fields. This study reports a novel focused patterning method for electrospun nanofibers that uses a cylindrical dielectric guide. The finite elements method (FEM) was used to analyze the electric field focusing phenomenon and ground its explanation in established theory. The horizontal and vertical electric field strengths in the simulation are shown to be key factors in determining the spatial distribution of nanofibers. The experimental results demonstrate a relationship between the size of the cylindrical dielectric guide and that of the electrospun area accumulated in the collector. By concentrating the electric field, we were able to fabricate a pattern of less than 6 mm. The demonstration of continuous line and square patterning shows that the electrospun area can be well controlled. This novel patterning method can be used in a variety of applications, such as sensors, biomedical devices, batteries, and composites.

Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field

2019 ◽  
Vol 30 (34) ◽  
pp. 345206 ◽  
Author(s):  
Hyunjin Ji ◽  
Hojoon Yi ◽  
Sakong Wonkil ◽  
Hyun Kim ◽  
Seong Chu Lim
Keyword(s):  
Electric Field ◽  
Monolayer Mos2 ◽  
Vertical Electric Field ◽  
Enhanced Mobility
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