Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Igor O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Enhanced Diffusion ◽  
Sic Wafer ◽  
Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

scholarly journals Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

1998 ◽  
Vol 527 ◽  
Author(s):  
R. J. Hanrahan ◽  
S. P. Withrow ◽  
M. Puga-Lambers
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Dynamic Strain ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Impurity Elements ◽  
Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION

1985 ◽  
Vol 56 ◽  
Author(s):  
S.A. SCHWARZ ◽  
T. VENKATESAN ◽  
R. BHAT ◽  
M. KOZA ◽  
H.W. YOON ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Mixing Effect ◽  
Thermal Mixing ◽  
Projected Range ◽  
Ion Mass Spectrometry ◽  
Before And After ◽  
Secondary Ion

AbstractThe effects of implantation and annealing on an AlAs-GaAs superlattice grown by OMCVD is examined with SIMS (secondary ion mass spectrometry). Several 180 keV 28Si+ implants, with doses ranging from 3 × 1013 to 3 × 1015 cm−2, are examined before and after a three hour 850 C anneal. While the implantation by itself causes some intermixing in the vicinity of the projected range, the 850 C thermal anneal induces significant mixing at depths well beyond the implant range. In the region of maximum implant damage, however, the post-thermal mixing effect is inhibited. Depth dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly enhanced in the mixed regions.

Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide

1995 ◽  
Vol 396 ◽  
Author(s):  
A V. Suvorov ◽  
I.O. Usov ◽  
V.V. Sokolov ◽  
A.A. Suvorova
Keyword(s):  
Silicon Carbide ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Radiation Enhanced Diffusion ◽  
Sic Wafer

AbstractThe diffusion of aluminum in silicon carbide during high-temperature A1+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 x 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 x 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

scholarly journals Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 689-697
Author(s):  
Margareta K. Linnarsson ◽  
Anders Hallén ◽  
Lasse Vines
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Three Dimensional ◽  
Medium Energy ◽  
Projected Range ◽  
Ion Backscattering ◽  
Thermal Vibrations ◽  
Secondary Ion

Channeling phenomena during ion implantation have been studied for 50 keV 11B, 100 keV 27Al and 240 keV 71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled 71Ga ions may travel 5 times as deep as 11B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for 71Ga but nearly negligible for 11B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Nova ◽  
A. R. Von Neida ◽  
S. J. Pearton
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Electronic Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Gaas Wafer ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTIn order to gain a better understanding of hydrogen in GaAs crystals, a Zn doped p+ GaAs wafer has been implanted with 300 keV protons (H) to a fluence of 1E16/ain and portions of the wafer have been furnace annealed at temperatures up to 600°C. The implanted H and the dopant Zn atomr were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the H redistributes itself in the p+ GaAs(Zn) in much the same manner as it does in n+ GaAs(Si). Movement of the implanted H begins with annealing at 200°C and proceeds rapidly with higher temperatures. However, based on the SIMS profiles, the diffusion coefficient for the H diffusing into the undamaged p+ GaAs(Zn) crystal appears to be considerably higher than that of H into n+ GaAs(Si). Electronic properties of the inplanted and annealed p+ GaAs samples have also been examined and correlated with the SINE profiles.

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Kringhoj ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Implantation Damage ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Impurity Profiles ◽  
Secondary Ion

ABSTRACTThe chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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