Comparative Studies of Pb/Cu(001) by TEM, AFM and STM

1998 ◽  
Vol 528 ◽  
Author(s):  
Franck Bocquet ◽  
Camille Cohen ◽  
Didier Schmaus ◽  
André Rocher ◽  
Jacques Crestou ◽  
...  
Keyword(s):  
Accurate Determination ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Specific Orientation

AbstractThe same specimen of Pb/Cu grown under Ultra High Vacuum (UHV) conditions has been investigated by Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM). We show that the information obtained by these techniques is consistent when comparable, and complementary. In particular, three different morphologies of Pb islands with specific orientation relationship are observed; AFM reveals the faceted shape of the islands; STM permits an accurate determination of the atomic structure of the facets; TEM moir6 patterns reveal that Pb islands are well relaxed.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

Industrial Applications of Scanning Probe Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 522-523
Author(s):  
S. Magonov
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Sample Surface ◽  
Industrial Applications ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy

The evolution of scanning tunneling microscopy (STM) into atomic force microscopy (AFM) have led to a family of scanning probe techniques which are widely applied in fundamental research and in industry. Visualization of the atomic- and molecular-scale structures and the possibility of modifying these structures using a sharp probe were demonstrated with the techniques on many materials. These unique capabilities initiated the further development of AFM and related methods generalized as scanning probe microscopy (SPM). The first STM experiments were performed in the clean conditions of ultra-high vacuum and on well-defined conducting or semi-conducting surfaces. These conditions restrict SPM applications to the real world that requires ambient-condition operation on the samples, many of which are insulators. AFM, which is based on the detection of forces between a tiny cantilever carrying a sharp tip and a sample surface, was introduced to satisfy these requirements. High lateral resolution and unique vertical resolution (angstrom scale) are essential AFM features.

The Formation and Evolution of InAs 3D Islands on GaAs(001) and a Comparative C-AFM and NC-AFM Study of InAs 3D Islands

1996 ◽  
Vol 440 ◽  
Author(s):  
T. R. Ramachandran ◽  
N. P. Kobayashi ◽  
R. Heitz ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
High Vacuum ◽  
Three Dimensional ◽  
Ultra High Vacuum ◽  
Condition Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Contact Mode ◽  
Force Microscopy ◽  
Highly Strained ◽  
2D To 3D

AbstractThe two-dimensional (2D) to three-dimensional (3D) morphology change in the highly strained growth of InAs on GaAs(001) is examined via in-situ, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and contact-mode atomic force microscopy (C-AFM). The formation of 3D InAs islands (˜2–4nm high) at an InAs delivery, θ˜1.57ML is found to be preceded by the appearance of small quasi-3D clusters (˜0.6–1.2nm high). The 2D to 3D transition is found to occur over a range of θ from ˜1.45ML to 1.74ML, with a varying and gradual mass transfer from 2D to 3D features with increasing θ. The InAs 3D islands are also examined in this study using non-contact AFM (NC-AFM) in order to assess the usefulness of this technique for imaging 3D features. Unlike the constancy observed in the C-AFM images, the NC-AFM images exhibit a marked imaging condition dependence. The variability observed in the NC-AFM images is qualitatively compared to the outcome of the simplest, force-gradient model of NC-AFM in order to extract a guideline for NC-AFM imaging of 3D features.

Construction Of UHV-REM-PEEM for Surface Studies

1990 ◽  
Vol 48 (1) ◽  
pp. 350-351
Author(s):  
Y. Kondo ◽  
K. Yagi ◽  
K. Kobayashi ◽  
H. Kobayashi ◽  
Y. Yanaka
Keyword(s):  
Electron Microscopy ◽  
Electronic Structure ◽  
High Vacuum ◽  
Scanning Tunneling Spectroscopy ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Surface Electronic Structure ◽  
Electron Microscopes

Recent development of ultra-high vacuum electron microscopy (UHV-EM) is very rapid. This is due to the fact that it can be applied to variety of surface science fields.There are various types of surface imaging in UHV condition; low energy electron microscopy (LEEM) [1], transmission (TEM) and reflection electron microscopy (REM) [2] using conventional transmission electron microscopes (CTEM) (including scanning TEM and REM)), scanning electron microscopy, photoemission electron microscopy (PEEM) [3] and scanning tunneling microscopy (STM including related techniques such as scanning tunneling spectroscopy (STS), atom force microscopy and magnetic force microscopy)[4]. These methods can be classified roughly into two; in one group image contrast is mainly determined by surface atomic structure and in the other it is determined by surface electronic structure. Information obtained by two groups of surface microscopy is complementary with each other. A combination of the two methods may give images of surface crystallography and surface electronic structure. STM-STS[4] and LEEM-PEEM [3] so far developed are typical examples.In the present work a combination of REM(TEM) and PEEM (Fig. 1) was planned with use of a UHV CTEM. Several new designs were made for the new microscope.

scholarly journals Formation of Micro- and Nano-Trenches on Epitaxial Graphene

2018 ◽  
Vol 8 (12) ◽  
pp. 2518 ◽  
Author(s):  
Tingwei Hu ◽  
Xiangtai Liu ◽  
Dayan Ma ◽  
Ran Wei ◽  
Kewei Xu ◽  
...  
Keyword(s):  
High Vacuum ◽  
Epitaxial Graphene ◽  
Ultra High Vacuum ◽  
Metal Particles ◽  
Damage Effect ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atmosphere Environment ◽  
Relationship Of

Catalytic cutting by metal particles under an atmosphere environment is a promising method for patterning graphene. Here, long straight micro-trenches are produced by the sliding of metal particles (Ag and In) on epitaxial graphene (EG) substrate under the ultra-high vacuum (UHV) annealing. The morphology and orientation relationship of the micro-trenches are observed by scanning electron microscopy (SEM), and the damage effect is confirmed by Raman scattering. Atomic force microscopy (AFM) and scanning tunneling microscopy (STM) are further adopted to atomically characterize the sliding behavior of metal particles, which resembles a similar etching method and can be used to make graphene nano-trenches. The study provides us with more understanding about the mutual effects between metals on EG, which hopes to pave the way for the applications of graphene-based devices.

The Heteroepitaxial Nucleation and Growth of Metal Oxides by Llvsztu Oxidation

2000 ◽  
Vol 648 ◽  
Author(s):  
Mridula D. Bharadwaj ◽  
Gnang-wen Zhou ◽  
Judith C. Yang
Keyword(s):  
Electron Microscopy ◽  
Water Vapor ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cu Film ◽  
Cu Oxidation

AbstractHere we report our investigations on the initial stages of Cu(OO1) oxidation in dry and moist atmosphere using in situ ultra high vacuum (UHV) transmission electron microscopy (TEM), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Cu20 islands were observed to grow 3-dimensionally into the Cu film as seen through the above mentioned techniques. Further, we discuss our interpretation of the experimental observations that presence of water vapor in the oxidizing atmosphere retards the rate of Cu oxidation and Cu20 shows surprising reduction when exposed to water vapor.

Interface Roughness: What is it and How is it Measured?

1992 ◽  
Vol 280 ◽  
Author(s):  
E. Chason ◽  
Charles M. Falco ◽  
A. Ourmazd ◽  
E. F. Schubert ◽  
J. M. Slaughter ◽  
...  
Keyword(s):  
Panel Discussion ◽  
Research Society ◽  
Interface Roughness ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Society Meeting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Materials Research

ABSTRACTA panel discussion on interface roughness was held at the Fall 1992 Materials Research Society meeting. We present a summary of the results presented by the invited speakers on the application and interpretation of X-ray reflectivity, atomic force microscopy (AFM), scanning tunneling microscopy (STM), photoluminescence and transmission electron microscopy. A transcript of the moderated discussion is provided in the final section.

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