Toward RF System-Level Integration: Process Integration Issues in Sige BICMOS

1998 ◽  
Vol 533 ◽  
Author(s):  
G. Freeman ◽  
K. Schonenberg ◽  
D. Ahlgren ◽  
S-J. Jeng ◽  
D. Nguyen-Ngoc ◽  
...  
Keyword(s):  
Large Scale ◽  
Process Integration ◽  
Crystal Defects ◽  
System Level ◽  
Rf System ◽  
Sige Hbt ◽  
Rf Systems ◽  
Integration Schemes ◽  
Bicmos Technology ◽  
Sige Bicmos

AbstractThe SiGe HBT, integrated with CMOS devices on the same chip, will be the first integrated device combination to realize the long-standing technology goal of fabricating RF systems on a chip. It has been demonstrated that the HBT device can replace the standard GaAs front-end of RF systems and take advantage of the reduced cost available from Si technologies in 200–300mm wafers. However, the SiGe HBT can only be part of a large-scale RF system on a chip when, in the same technology, NFETs and PFETs are provided for low power, low frequency digital logic, and a suite of resistors, capacitors, diodes, and inductor passive elements are provided for the high frequency analog circuitry. Furthermore, all these elements must be manufacturable defect-free at medium and high levels of integration.This paper covers keyprocess integration issues confronting technologists when integrating a SiGe HBT device with the requisite CMOS and passive elements and at the same time maintaining very high GaAs-like performance. Topics to be discussed are 1) a review of high-performance HBT device integration schemes employed to date and integration issues with each scheme, 2)integration issues in epitaxial cleaning and growth techniques, 3) integration issues influencing crystal defects, and 4) integration issues with passive elements. Status of the IBM SiGe BiCMOS technology will be presented to illustrate the first successful integration of this set of devices into a manufacturable process.

Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

2004 ◽  
Author(s):  
T. Hashimoto ◽  
Y. Nonaka ◽  
T. Tominari ◽  
H. Fujiwara ◽  
K. Tokunaga ◽  
...  
Keyword(s):  
Sige Hbt ◽  
Bicmos Technology ◽  
Sige Bicmos

SiGe HBT/BiCMOS Technologies and their Applications to Communication ICs/LSIs

2004 ◽  
Vol 809 ◽  
Author(s):  
Katsuya Oda ◽  
Katsuyoshi Washio ◽  
Takashi Hashimoto
Keyword(s):  
High Speed ◽  
Cutoff Frequency ◽  
Clock Rate ◽  
Sige Hbt ◽  
Selective Epitaxial Growth ◽  
Communications Systems ◽  
Ultra High Speed ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Doping Profiles

ABSTRACTSelf-aligned ultra-high-speed SiGe HBTs were developed by using selective epitaxial growth (SEG) technology. The use of HCl-free SEG, incorporation of C, and optimization of doping profiles significantly improves the performance of the HBT, producing a transistor with a high cutoff frequency of 170 GHz and a maximum oscillation frequency of 204 GHz, for a minimum ECL gate delay time of 4.8 ps. This is applied in a 16:1 MUX with a maximum clock rate of 57 GHz. A 0.13-μm SiGe BiCMOS technology is also realized without any degradation of CMOS due to the high stability of SiGe HBTs. Furthermore, the structure of SiGe HBT is optimized for an emitter scaled down towards 100 nm, mainly through the use of a funnel-shaped emitter electrode to reduce both emitter and base resistances. High-speed operation of a static frequency divider demonstrates the advantage of SiGe HBTs for ultra-high-speed communications systems.

J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

2015 ◽  
Vol 7 (3-4) ◽  
pp. 339-347 ◽  
Author(s):  
Stefan Malz ◽  
Bernd Heinemann ◽  
Rudolf Lachner ◽  
Ullrich R. Pfeiffer
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Small Signal ◽  
Sige Hbt ◽  
Bicmos Technology ◽  
Signal Amplifier ◽  
Sige Bicmos ◽  
Amplifier Design ◽  
Noise Amplifier

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmaxof 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

scholarly journals Charge pump design in 130 nm SiGe BiCMOS technology for low-noise fractional-N PLLs

2015 ◽  
Vol 13 ◽  
pp. 133-139 ◽  
Author(s):  
M. Kucharski ◽  
F. Herzel
Keyword(s):  
Low Noise ◽  
Fine Tuning ◽  
Phase Detector ◽  
Numerical Comparison ◽  
Pump Design ◽  
Sige Hbt ◽  
Charge Pumps ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Device Noise

Abstract. This paper presents a numerical comparison of charge pumps (CP) designed for a high linearity and a low noise to be used in a fractional-N phase-locked loop (PLL). We consider a PLL architecture, where two parallel CPs with DC offset are used. The CP for VCO fine tuning is biased at the output to keep the VCO gain constant. For this specific architecture, only one transistor per CP is relevant for phase detector linearity. This can be an nMOSFET, a pMOSFET or a SiGe HBT, depending on the design. The HBT-based CP shows the highest linearity, whereas all charge pumps show similar device noise. An internal supply regulator with low intrinsic device noise is included in the design optimization.

High-Speed SiGe BiCMOS Technologies and Circuits

2017 ◽  
Vol 26 (01n02) ◽  
pp. 1740002 ◽  
Author(s):  
A. Mai ◽  
I. Garcia Lopez ◽  
P. Rito ◽  
R. Nagulapalli ◽  
A. Awny ◽  
...  
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Heterojunction Bipolar Transistor ◽  
Sige Hbt ◽  
Wave Radar ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Additional Process ◽  
The Difference ◽  
Oscillation Frequencies

This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the evolution of complex BiCMOS technologies. With respect to different technology generations of high-speed SiGe-BiCMOS processes at IHP we discuss selected device modifications of the SiGe-HBT to achieve high frequency performances of a complex BiCMOS technology towards the 0.5 THz regime. We show the difference of high-frequency performance difference with respect to maximum achievable transit frequencies fT and oscillation frequencies fmax in comparison to RF-CMOS technologies and depict the required increase of additional process effort for the HBT-module integration for a 0.5 THz SiGe-BiCMOS technology. Moreover different high speed circuits are presented like broadband ICs for optical communication, high frequency circuits for wireless communication at 60 and 240 GHz, mm-wave radar circuits at 60 and 120 GHz as well as THz circuits operating at 245 GHz and 500 GHz for spectroscopic applications. All reviewed circuit examples are based on the discussed 130nm-SiGe-BiCMOS technologies and show their potential for a broad range of high-speed applications.

The sugar and alcohol industry in the biofuels and cogeneration era: a paradigm change (part II)

2014 ◽  
pp. 97-104 ◽  
Author(s):  
Electo Eduardo Silv Lora ◽  
Mateus Henrique Rocha ◽  
José Carlos Escobar Palacio ◽  
Osvaldo José Venturini ◽  
Maria Luiza Grillo Renó ◽  
...  
Keyword(s):  
Large Scale ◽  
New Technologies ◽  
Process Integration ◽  
Animal Feed ◽  
Raw Materials ◽  
Biofuel Production ◽  
New Paradigm ◽  
Alcohol Industry ◽  
Feed Production ◽  
Steam Parameters

The aim of this paper is to discuss the major technological changes related to the implementation of large-scale cogeneration and biofuel production in the sugar and alcohol industry. The reduction of the process steam consumption, implementation of new alternatives in driving mills, the widespread practice of high steam parameters use in cogeneration facilities, the insertion of new technologies for biofuels production (hydrolysis and gasification), the energy conversion of sugarcane trash and vinasse, animal feed production, process integration and implementation of the biorefinery concept are considered. Another new paradigm consists in the wide spreading of sustainability studies of products and processes using the Life Cycle Assessment (LCA) and the implementation of sustainability indexes. Every approach to this issue has as an objective to increase the economic efficiency and the possibilities of the sugarcane as a main source of two basic raw materials: fibres and sugar. The paper briefly presents the concepts, indicators, state-of-the-art and perspectives of each of the referred issues.

Building a Culture of Ethical, Comparable, Authentic Assessment

2019 ◽  
pp. 463-481
Author(s):  
Andrew Reid ◽  
Julie Ballantyne
Keyword(s):  
Teaching And Learning ◽  
Large Scale ◽  
Authentic Assessment ◽  
Subject Area ◽  
Music Educators ◽  
System Level ◽  
Diverse Range ◽  
Effective Learning ◽  
School Based ◽  
The Subject

In an ideal world, assessment should be synonymous with effective learning and reflect the intricacies of the subject area. It should also be aligned with the ideals of education: to provide equitable opportunities for all students to achieve and to allow both appropriate differentiation for varied contexts and students and comparability across various contexts and students. This challenge is made more difficult in circumstances in which the contexts are highly heterogeneous, for example in the state of Queensland, Australia. Assessment in music challenges schooling systems in unique ways because teaching and learning in music are often naturally differentiated and diverse, yet assessment often calls for standardization. While each student and teacher has individual, evolving musical pathways in life, the syllabus and the system require consistency and uniformity. The challenge, then, is to provide diverse, equitable, and quality opportunities for all children to learn and achieve to the best of their abilities. This chapter discusses the designing and implementation of large-scale curriculum as experienced in secondary schools in Queensland, Australia. The experiences detailed explore the possibilities offered through externally moderated school-based assessment. Also discussed is the centrality of system-level clarity of purpose, principles and processes, and the provision of supportive networks and mechanisms to foster autonomy for a diverse range of music educators and contexts. Implications for education systems that desire diversity, equity, and quality are discussed, and the conclusion provokes further conceptualization and action on behalf of students, teachers, and the subject area of music.

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals Drug Prescription Profiles in Patients with Polypharmacy in Spain: A Large-Scale Pharmacoepidemiologic Study Using Real-World Data

2021 ◽  
Vol 18 (9) ◽  
pp. 4754
Author(s):  
Miguel Ángel Hernández-Rodríguez ◽  
Ermengol Sempere-Verdú ◽  
Caterina Vicens-Caldentey ◽  
Francisca González-Rubio ◽  
Félix Miguel-García ◽  
...  
Keyword(s):  
Psychotropic Drugs ◽  
Large Scale ◽  
Anatomical Therapeutic Chemical ◽  
Drug Prescription ◽  
Age Groups ◽  
System Level ◽  
Real World Data ◽  
Converting Enzyme Inhibitors ◽  
Cross Sectional ◽  
Β Blockers

We aimed to identify and compare medication profiles in populations with polypharmacy between 2005 and 2015. We conducted a cross-sectional study using information from the Computerized Database for Pharmacoepidemiologic Studies in Primary Care (BIFAP, Spain). We estimated the prevalence of therapeutic subgroups in all individuals 15 years of age and older with polypharmacy (≥5 drugs during ≥6 months) using the Anatomical Therapeutic Chemical classification system level 4, by sex and age group, for both calendar years. The most prescribed drugs were proton-pump inhibitors (PPIs), statins, antiplatelet agents, benzodiazepine derivatives, and angiotensin-converting enzyme inhibitors. The greatest increases between 2005 and 2015 were observed in PPIs, statins, other antidepressants, and β-blockers, while the prevalence of antiepileptics was almost tripled. We observed increases in psychotropic drugs in women and cardiovascular medications in men. By patient´s age groups, there were notable increases in antipsychotics, antidepressants, and antiepileptics (15–44 years); antidepressants, PPIs, and selective β-blockers (45–64 years); selective β-blockers, biguanides, PPIs, and statins (65–79 years); and in statins, selective β-blockers, and PPIs (80 years and older). Our results revealed important increases in the use of specific therapeutic subgroups, like PPIs, statins, and psychotropic drugs, highlighting opportunities to design and implement strategies to analyze such prescriptions’ appropriateness.

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