Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

2003 ◽  
Vol 762 ◽  
Author(s):  
Woo-Jin Nam ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Soo-Jeong Park ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Irradiation Intensity ◽  
Transmission Electron ◽  
Electrode Edge ◽  
Beam Diffraction ◽  
Annealing Method

AbstractIncomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

1999 ◽  
Vol 558 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Kee-Chan Park ◽  
Ji-Hoon Kang ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Laser Recrystallization ◽  
Conventional Laser ◽  
Annealing Method ◽  
Si Thin Film

ABSTARCTExcimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

1994 ◽  
Vol 321 ◽  
Author(s):  
H. Kuriyama ◽  
K. Sano ◽  
S. Ishida ◽  
T. Nohda ◽  
Y. Aya ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Short Processing Time ◽  
Low Temperature Processing ◽  
Excimer Laser Crystallization ◽  
Annealing Method

ABSTRACTWe have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
C-M Park ◽  
M-C Lee ◽  
J-H Jeon ◽  
M-K Han
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Growth Effect ◽  
Beam Irradiation ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Transmission Electron ◽  
Si Thin Film

AbstractExcimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

2006 ◽  
Vol 505-507 ◽  
pp. 277-282 ◽  
Author(s):  
Yu Ru Chen ◽  
Long Sun Chao
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Pulse Number ◽  
Sio2 Layer ◽  
Excimer Laser Annealing ◽  
Melt Pool ◽  
Si Films ◽  
Annealing Method

This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), pulse number (1~10 shots) and coverage fraction (0~100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

2009 ◽  
Vol 48 (8) ◽  
pp. 081608 ◽  
Author(s):  
Mitsuru Nakata ◽  
Kazushige Takechi ◽  
Toshimasa Eguchi ◽  
Eisuke Tokumitsu ◽  
Hirotaka Yamaguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Excimer Laser Annealing
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