Lattice Parameter Determination of Textured Co81−xCr15PtxTa4 Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
B. Lu ◽  
S. D. Harkness ◽  
W. A. Lewis ◽  
D. E. Laughlin ◽  
D. N. Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Variation Rate ◽  
Sputter Deposited

ABSTRACTThe thin films Co81−xCr15PtxTa4 with (0002) crystallographic texture have been sputter deposited with and without substrate bias. The lattice parameter of the thin films has been determined by a combination of x-ray diffraction and electron diffraction techniques. The resolution of the electron diffraction was enhanced by a digital imaging technique. The variation rate of the a lattice parameter with Pt content is consistent with Vegard's law. The change in the c lattice parameter is much greater than what is expected from Vegard's law.

High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals

2012 ◽  
Vol 68 (1) ◽  
pp. 8-14 ◽  
Author(s):  
Martin Schmidbauer ◽  
Albert Kwasniewski ◽  
Jutta Schwarzkopf
Keyword(s):  
High Resolution ◽  
High Precision ◽  
Room Temperature ◽  
Systematic Errors ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bond Method

The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10−5 has been achieved by applying a sophisticated high-resolution X-ray diffraction technique which is based on the modified Bond method. The results on cubic SrTiO3 [a = 3.905268 (98) Å], orthorhombic DyScO3 [a = 5.442417 (54), b = 5.719357 (52) and c = 7.904326 (98) Å], and orthorhombic NdGaO3 [a = 5.428410 (54), b = 5.498407 (55) and c = 7.708878 (95) Å] are discussed in view of possible systematic errors as well as non-stoichiometry in the crystals.

scholarly journals Comparative Study Between Low Incidence X-Ray Diffraction and Electron Diffraction Applied to Texture Determination of Thin Films of Cu/NaCl

1991 ◽  
Vol 14 ◽  
pp. 127-132
Author(s):  
D. Schlatter ◽  
C. Baltzinger ◽  
A. Tizliouine ◽  
J. J. Heizmann ◽  
C. Burggraf
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Comparative Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Incidence

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

Structure determination of modulated structures by powder X-ray diffraction and electron diffraction

2016 ◽  
Vol 3 (11) ◽  
pp. 1351-1362 ◽  
Author(s):  
Zhengyang Zhou ◽  
Lukáš Palatinus ◽  
Junliang Sun
Keyword(s):  
Electron Diffraction ◽  
Structure Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Modulated Structures ◽  
Conventional Methods

The combination of PXRD and ED is applied to determine modulated structures which resist solution by more conventional methods.

scholarly journals Влияние толщины пленки Pt на изменение текстуры и доли кристаллической фазы при ее отжиге

2020 ◽  
Vol 90 (5) ◽  
pp. 795
Author(s):  
Р.В. Селюков ◽  
В.В. Наумов
Keyword(s):  
Volume Fraction ◽  
Curve Analysis ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Texture Parameters ◽  
Sputter Deposited ◽  
Pt Films ◽  
H 20

Textured Pt films with thickness h=20-80 nm were sputter deposited on oxidized c-Si (100) wafers and annealed in vacuum at 500°C/60 min. The thickness dependencies of the crystalline texture parameters and of the fraction of crystalline phase δ are obtained for as-deposited and annealed films using X-ray diffraction. The determination of δ in textured films is carried out by the new method based on rocking curve analysis. It is found that annealing leads to the texture improvement and to the increasing of δ for all h. The less h, the stronger effects of texture improvement and of δ increasing. These results are explained by the annealing-induced formation of large secondary grains whose volume fraction increases as h decreases. The inhomogeneity of the depth distributions of texture parameters and of δ are investigated for the as-deposited Pt films.

Interrupted silicogermanate with 10-ring channels: synthesis and structure determination by combining rotation electron diffraction and powder X-ray diffraction

2017 ◽  
Vol 4 (10) ◽  
pp. 1654-1659 ◽  
Author(s):  
Yilin Wang ◽  
Yunchen Wang ◽  
Jie Su ◽  
Xiaowei Song ◽  
Wei Wan ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Structure Determination ◽  
X Ray Diffraction ◽  
X Ray

Structure determination of silicogermanate with sti layers pillared by D4R/Ge7 units by rotation electron diffraction and powder X-ray diffraction.

Sign in / Sign up

Export Citation Format

Share Document