The Impact of Deposition Parameters on the Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD

2005 ◽  
Vol 866 ◽  
Author(s):  
Michael Flynn ◽  
Jacek Wojcik ◽  
Subhash Gujrathi ◽  
Edward Irving ◽  
Peter Mascher
Keyword(s):  
Flow Rate ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Oxygen Flow Rate ◽  
Optical Measurements ◽  
Oxygen Flow ◽  
Flow Rate Ratio ◽  
Elastic Recoil ◽  
The Impact

AbstractSilicon rich silicon oxide films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The films were doped in situ using an organometallic precursor. Optical measurements show that the refractive indices of the films are determined by the silane to oxygen flow rate ratio used during the depositions. The erbium content as measured by elastic recoil detection (ERD) is also strongly dependent on the oxygen flow rate, with more erbium being incorporated in the more highly oxygenated films. The erbium content was also found to vary inversely with plasma power, which did not have a significant effect on the silicon to oxygen ratio. This allows the erbium and excess silicon levels of the films to be controlled independently.

The influence of oxygen flow rate on properties of SnO2 thin films grown epitaxially on c-sapphire by chemical vapor deposition

2015 ◽  
Vol 594 ◽  
pp. 270-276 ◽  
Author(s):  
Y.M. Lu ◽  
J. Jiang ◽  
C. Xia ◽  
B. Kramm ◽  
A. Polity ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Sno2 Thin Films

Characterization of (Ba,Sr)RuO3 Films Deposited by Metal-organic Chemical Vapor Deposition

2001 ◽  
Vol 688 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Joong-Seo Kang ◽  
Young-Bae Kim ◽  
Duck-Hwa Hong ◽  
Hyun-Chul Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxygen Flow Rate ◽  
Perovskite Oxide ◽  
Oxygen Flow ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThin film electrodes of the perovskite oxide (Ba,Sr)RuO3 (BSR) were deposited on 4 inch ptype Si wafers by metal organic chemical vapor deposition (MOCVD) for the practical (Ba,Sr)TiO3 (BST) capacitor application using a new single cocktail source. The source materials used for the MOCVD BSR process were Ba(METHD)2, Sr(METHD)2 and Ru(METHD)3 and these were dissolved in n-butyl acetate. The source-feeding rate was precisely controlled by liquid mass flow controllers (LMFC). As-deposited BSR films possessed a (110)-oriented structure, with good uniformity and adherence on bare Si wafer. The phase formation was strongly affected by the oxygen flow rate and the input source rate. As the oxygen flow rate increased, the Ru/(Ba+Sr) composition ratio in the film decreased, while the Ba/(Ba+Sr) ratio was almost independent of the oxygen flow rate. The dielectric constants of BST capacitors fabricated using these electrodes was greater than 500.

Preparation of PZT Thin Films by ECR PECVD

1994 ◽  
Vol 343 ◽  
Author(s):  
J. W. Kim ◽  
S. T. Kim ◽  
S. W. Chung ◽  
J. S. Shin ◽  
K. S. No ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Flow Rate Ratio ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Source Flow

ABSTRACTLead zirconate titanite (PZT) thin films have been prepared on Pt/Ti/SiO2/Si and Pt/Ta/Si2/Si substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at low temperatures using metal-organic (MO) sources. One of the advantages of this method is the easy control of the cation concentrations in the PZT films through the adjustment of the flow rates of each MO sources. The film compositional ratio Ti/Zr was found to be linearly proportional to the flow rate ratio of the input Ti and Zr MO sources. The Pb/(Zr+Ti) ratio was not so much affected by the Ti source flow rate but was inversely proportional to the Zr source flow rate. Pb concentration in the deposited PZT films increased with increasing Ti source flow rate and with decreasing substrate temperature. Perovskite single phase PZT films were successfully fabricated at low temperatures below 500 °C. The perovskite structure was obtained when the Pb/(Zr+Ti) ratio in the deposited film was close to 1.

Reliability of Electrodeposited Copper and Ecrcvd Siof Films for Multilevel Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
Seoghyeong Lee ◽  
Yong-An Kim ◽  
Kyoung-Woo Lee ◽  
Seil Sohn ◽  
Young-Il Kim ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Multilayer Structure ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Vacuum Furnace ◽  
Electrical Stability ◽  
Metal Interconnects ◽  
The Stability ◽  
Interconnect System

AbstractThe effect of a post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) was studied. Also, the thermal stability of an electrodeposited Cu / sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective in prevention of water absorption. The Cu/Ta/SiOF/Si system was thermally stable at least up to 500°C for 3h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a big role in suppressing the interdiffusion between SiOF and metal interconnects. By C-V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 2 h.

Effects of Reaction Conditions on Deposition of Ferrites from Alkaline Metal Hydroxide Gels

1997 ◽  
Vol 495 ◽  
Author(s):  
Karl F. Schoch ◽  
Theodore R. Vasilow
Keyword(s):  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Metal Hydroxides ◽  
X Ray ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Mg Content

ABSTRACTFormation of ferrites from aqueous solution of metal salts is a well known process involving precipitation of metal hydroxides followed by oxidation of the resulting gel. The purpose of the present work was to determine the effects oxygen flow rate on the progress of the reaction and on the structure and properties of the resulting precipitate. The reaction was carried out at 70°C with pH of 10.5 and oxygen flow rate of 2,4, or 8 standard liters per hour. The progress of the reaction was monitored by following the oxidation-reduction potential of the solution, which changes dramatically after the Fe(II) is consumed. The reaction rate increased with increasing oxygen flow rate. The Mg content of the precipitate was lower than that of the reaction mixture, possibly because of the pH of the reaction mixture. X-ray diffraction and infrared spectroscopy confirmed formation of a ferrite under these conditions.

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