Fluorine Incorporation Into Hard Amorphous Hydrogenated Carbon Films Deposited by PECVD

1999 ◽  
Vol 593 ◽  
Author(s):  
F. L. Freire ◽  
L. G. Jacobsohn ◽  
D. F. Franceschini
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Film Deposition ◽  
Density Reduction ◽  
Self Bias ◽  
Amorphous Network ◽  
Vapor Deposition Technique ◽  
Ir Transmission ◽  
Amorphous Hydrogenated Carbon

ABSTRACTThe incorporation of fluorine into amorphous hydrogenated carbon films deposited by the plasma enhanced chemical vapor deposition technique (PECVD) was investigated. Different mixtures of CH4 and CF4 were employed as the plasma atmosphere, with the partial pressure of CF4 ranging from 0 to 100 %. For all depositions, the self-bias was kept at –350 V. In the case of atmospheres richer than ∼80 % of CF4, no film deposition but substrate erosion was observed. The composition of the films was determined by Ion Beam Analysis (IBA), revealing that fluorine is incorporated into the amorphous network by replacing hydrogen. Infrared (IR) transmission measurements confirmed these results. It was also found that the incorporation of fluorine has the effect of reducing both the internal stress and hardness due to atomic density reduction.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

scholarly journals Characterization and Performance of Carbon Films Deposited by Plasma and Ion Beam Based Techniques

1994 ◽  
Vol 354 ◽  
Author(s):  
K.C. Walter ◽  
H. Kung ◽  
T. Levine ◽  
J.T. Tesmer ◽  
P. Kodali ◽  
...  
Keyword(s):  
Wear Rate ◽  
Surface Area ◽  
Ion Beam ◽  
Carbon Films ◽  
The Self ◽  
Line Of Sight ◽  
Rf Power ◽  
Hard Carbon ◽  
Self Bias ◽  
Cathodic Arc

AbstractPlasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp3 bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

scholarly journals Field Emission from Carbon Films Deposited by Controlled-Low-Energy Beams and CVD Sources

1999 ◽  
Vol 585 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Vladimir I. Merkulov ◽  
L. R. Baylor ◽  
G. E. Jellison ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Surface Morphology ◽  
Field Emission ◽  
Metal Ion ◽  
Ion Beam ◽  
Pyrolytic Graphite ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Damage Site

AbstractThe principal interests in this work are energetic-beam control of carbon-film properties and the roles of doping and surface morphology in field emission. Carbon films with variable sp3-bonding fraction were deposited on n-type Si substrates by ArF (193 nm) pulsed-laser ablation (PLA) of a pyrolytic graphite target, and by direct metal ion beam deposition (DMIBD) using a primary Cs+ beam to generate the secondary C- deposition beam. The PLA films are undoped while the DMIBD films are doped with Cs. The kinetic energy (KE) of the incident C atoms/ions was controlled and varied over the range from ∼25 eV to ∼175 eV. Earlier studies have shown that C films' sp3-bonding fraction and diamond-like properties can be maximized by using KE values near 90 eV. The films' surface morphology, sp3–bonding fraction, and Cs-content were determined as a function of KE using atomic force microscopy, TEM/EELS, Rutherford backscattering and nuclear reaction measurements, respectively. Field emission (FE) from these very smooth undoped and Cs-containing films is compared with the FE from two types of deliberately nanostructured carbon films, namely hot-filament chemical vapor deposition (HF-CVD) carbon and carbon nanotubes grown by plasma-enhanced CVD. Electron field emission (FE) characteristics were measured using ∼25-μm, ∼5-μm and ∼1-μm diameter probes that were scanned with ∼75 nm resolution in the x-, y-, and z-directions in a vacuum chamber (∼5 × 10-7 torr base pressure) equipped with a video camera for viewing. The hydrogen-free and very smooth a-D or a-C films (with high or low sp3 content, and with or without ∼1% Cs doping) produced by PLD and DMIBD are not good field emitters. Conditioning accompanied by arcing was required to obtain emission, so that their subsequent FE is characteristic of the arc-produced damage site. However, deliberate surface texturing can eliminate the need for conditioning, apparently by geometrical enhancement of the local electric field. But the most promising approach for producing macroscopically flat FE cathodes is to use materials that are highly nanostructured, either by the deposition process (e.g. HF-CVD carbon) or intrinsically (e.g. carbon nanotubes). HF-CVD films were found to combine a number of desirable properties for FE displays and vacuum microelectronics, including the absence of conditioning, low turn-on fields, high emission site density, and apparent stability and durability during limited long-term testing. Preliminary FE measurements revealed that vertically aligned carbon nanotubes are equally promising.

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

scholarly journals Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics

1989 ◽  
Vol 161 ◽  
Author(s):  
J.K. Shurtleff ◽  
D.D. Allred ◽  
R.T. Perkins ◽  
J.M. Thorne
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Atomic Layer Epitaxy ◽  
Ray Optics ◽  
X Ray ◽  
Vapor Deposition Technique ◽  
Number Of Cycles

ABSTRACTThin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Development of Electrostatic Actuated Nano Tensile Testing Device for Mechanical and Electrical Characteristics of FIB Deposited Carbon Nanowire

2006 ◽  
Vol 924 ◽  
Author(s):  
Mario Kiuchi ◽  
Shinji Matsui ◽  
Yoshitada Isono
Keyword(s):  
Ion Beam ◽  
Tensile Load ◽  
Chemical Vapor ◽  
Tensile Tests ◽  
Carbon Films ◽  
Uniaxial Tensile ◽  
Resistance Change ◽  
Carbon Nanowire ◽  
Focus Ion Beam ◽  
Carbon Nanowires

ABSTRACTThis research develops Electrostatic Actuated NAno Tensile testing devices (EANATs) to evaluate mechanical and electrical properties of carbon nanowires fabricated by focus ion beam- assisted chemical vapor deposition (FIB-CVD). This research carried out nanoscale uniaxial tensile tests for 90 nm- to 150 nm-diametric carbon nanowires using EANATs. Young's modulus of cabon nanowires averaged 58 GPa, which was close to that of hydrogenated diamond-like carbon films. On average, fracture stress and strain of carbon nanowires reached values of 4.2 GPa and 0.08, respectively. This research also measured I-V characteristics of 100 nm-diametric carbon nanowires under tensile loading to reveal the piezo resistivity of nanowires. The piezoresistive effect of carbon nanowire was observed. The tensile load was about 0.75 GPa at maximum value of the resistance change.

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