Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions

AbstractThe effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

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Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005342 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 977-983

Author(s):

Yong-Hwan Kwon ◽

G. H. Gainer ◽

S. Bidnyk ◽

Y. H. Cho ◽

J. J. Song ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Chemical Vapor ◽

Multiple Quantum ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Recombination Rates ◽

Satellite Peak ◽

Interface Quality

The effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

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Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

Applied Sciences ◽

10.3390/app11188639 ◽

2021 ◽

Vol 11 (18) ◽

pp. 8639

Author(s):

Zhiwei Li ◽

Yugang Zeng ◽

Yue Song ◽

Jianwei Zhang ◽

Yinli Zhou ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Chemical Vapor ◽

Lattice Relaxation ◽

Organic Chemical ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Peak Energy ◽

Metal Organic ◽

The Relationship

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Nanoscale Research Letters ◽

10.1186/s11671-020-03420-y ◽

2020 ◽

Vol 15 (1) ◽

Author(s):

Xiaowei Wang ◽

Feng Liang ◽

Degang Zhao ◽

Zongshun Liu ◽

Jianjun Zhu ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Layer Thickness ◽

Stark Effect ◽

Chemical Vapor ◽

Multiple Quantum ◽

Three Samples ◽

Measurement Results ◽

Cap Layer ◽

The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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Structural and optical properties of ZnCdO/ZnO multiple quantum wells grown on sapphire substrates using pulsed laser deposition

Journal of Applied Physics ◽

10.1063/1.4759325 ◽

2012 ◽

Vol 112 (8) ◽

pp. 083513 ◽

Cited By ~ 10

Author(s):

J. Jiang ◽

L. P. Zhu ◽

H. P. He ◽

Y. Li ◽

Y. M. Guo ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Structural And Optical Properties ◽

Sapphire Substrates

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Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

Materials Science Forum ◽

10.4028/www.scientific.net/msf.934.8 ◽

2018 ◽

Vol 934 ◽

pp. 8-12

Author(s):

Jian Guo Zhao ◽

Xiong Zhang ◽

Jia Qi He ◽

Shuai Chen ◽

Zi Li Wu ◽

...

Keyword(s):

Quantum Wells ◽

Chemical Vapor ◽

Multiple Quantum Wells ◽

Modulation Method ◽

Duty Ratio ◽

Organic Chemical ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Metal Organic

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

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