Plasma Etching Damage to Ferroelectric SrBi2Ta2O9 (SBT) Thin Films and Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
Jun Hee Cho ◽  
Il Young Kwon ◽  
Chanro Park ◽  
Chang Ju Choi ◽  
Yeo Song Seol ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Surface Composition ◽  
Oxygen Deficiency ◽  
Reactive Ion Etching ◽  
Reference Sample ◽  
Hysteresis Loops ◽  
Ion Etching ◽  
Voltage Shift ◽  
Voltage Axis

AbstractThe effects of reactive ion etching damage on the electrical properties of Pt/SBT/Pt capacitors have been investigated. The plasma treated SBT/Pt layers showed a significant decrease in remanent polarization compared with that of the reference sample. The remanent polarization of the plasma treated layers varied with the gas ratios of the Cl2/Ar plasma. XPS analysis of the plasma treated SBT/Pt samples showed that the surface composition was significantly changed as the gas ratios were varied, which resulted in a polarization decrease in the plasma treated samples. Plasma treatment also caused a voltage shift of the hysteresis loops along the voltage axis. The magnitude of the voltage shift was increased for the chlorine-rich plasma. The results of surface analysis revealed that the voltage shift is caused by oxygen deficiency at the SBT surface. Based on our experimental results, reactive ion etching damage was explained in terms of physical and electrical effects of the plasma on the electrical properties of the ferroelectric Pt/SBT/Pt capacitors.

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6682-6686 ◽  
Author(s):  
Masato Koyama ◽  
Chon-wa Cheong ◽  
Koji Yokoyama ◽  
Iwao Ohdomari
Keyword(s):  
Electrical Properties ◽  
Surface Defects ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

Processing and Electrical Properties of KNbO3 Ferroelectric Dense Ceramics Added with Small Amount of Bi2O3 and MnCO3

2006 ◽  
Vol 301 ◽  
pp. 19-22 ◽  
Author(s):  
Takeru Yoshida ◽  
Hajime Nagata ◽  
Tadashi Takenaka
Keyword(s):  
Electrical Properties ◽  
Grain Growth ◽  
Remanent Polarization ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Hysteresis Loops ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Milling Process ◽  
Firing Process

Doping a small quantity of additive Bi2O3 is effective in suppressing the deliquescence of KNbO3 ceramics. When an optimized ball-milling process was included, dense and nondeliquescent KNbO3 ceramics were obtained by a conventional firing process. However, the presence of Bi prevented grain growth (<0.2 μm) and it was one of the causes of low ferroelectricity. Moreover, the insufficient resistivity made the poling treatment difficult. In order to improve the electric properties, a small quantity of additive MnCO3 was also doped into KNbO3 with 0.5 mass% Bi2O3. Codoping of KNbO3 with MnCO3 and Bi2O3 (abbreviated to KNBixMny; x = 0~1.0, y = 0~1.0 in mass%) improved the ferroelectricity of samples, and it also had an effect on the resistivity and densification of sintered bodies. Well-saturated P-E hysteresis loops were observed with any amount of Mn and the largest remanent polarization Pr was about 16 μC/cm2. The piezoelectric properties of KNBi0.5Mn0.3, which had the highest piezoelectricity in this study, are an electromechanical coupling factor k33 and piezoelectric constant d33 of 0.30 and 101 pC/N, respectively.

Epoxy-Based Multichannel Microelectrode for Insect Biopotential Recording

2006 ◽  
Vol 18 (4) ◽  
pp. 499-503
Author(s):  
Yoshihiko Kuwana ◽  
Keyword(s):  
Electrical Properties ◽  
Electrode Material ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Size Analysis ◽  
Ion Etching ◽  
Shape And Size ◽  
Biopotential Recording

Microelectrodes are being developed in order to record action biopotentials of insects. Silicon was conventionally used as the electrode material and microelectrodes were fabricated by anisotropic etching and reactive ion etching. Because electrode microprobe shape and size were very difficult to control, we propose a novel pin-shaped multichannel microelectrode. Epoxy-based UV photoresist must be used as the electrode material to facilitate the control of the microelectrode shape and size. Analysis of the electrical properties of this electrode showed that it has properties excellent enough to record insect biopotentials.

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm3+ Substitution

2012 ◽  
Vol 624 ◽  
pp. 154-157
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Layered Perovskite Structure ◽  
Large Leakage Current ◽  
Bst Ceramics ◽  
Titanate Ceramics

The electrical properties of Sm-doped bismuth titanate，Bi4-xSmxTi3O12 (BST) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. The P-V hysteresis loops of samples with x=0.4 and 1.2 were characterized by large leakage current, whereas for samples with x=0.6 and 0.8 the P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BST ceramic with x=0.8 were above 20μC/cm2 and 60KV/cm , respectively.

Surface Reactivity of Silicon and Germanium in CF4 -O2 Reactive Ion Etching

1993 ◽  
Vol 324 ◽  
Author(s):  
Christophe Cardinaud ◽  
A. Campo ◽  
G. Turban
Keyword(s):  
Experimental Data ◽  
Surface Composition ◽  
Formation Rate ◽  
Reactive Ion Etching ◽  
Surface Reactivity ◽  
Silicon Etching ◽  
Plasma Composition ◽  
Ion Etching ◽  
Simple Kinetic Model ◽  
Silicon And Germanium

AbstractReactive ion etching of silicon and germanium in CF4 -O2 was investigated. Above 20% O2 germanium etching is selective with respect to silicon. In agreement with the evolution of the fluorine and oxygen concentration in the plasma and of the etch products formation rate, surface analysis reveals that the growth of a SiOxFy layer slows down the silicon etching whereas the formation of GeOxFy does not inhibit germanium etching. Using a simple kinetic model, the silicon and germanium reactivity and its dependency with respect to the plasma composition are expressed in function of the experimental data. Results suggest that surface composition controls silicon etching, whereas germanium etching depends only on the fluorine flux on the surface.

Ferroelectric Characteristics of Bi4-xPrxTi3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 382-385
Author(s):  
Rui Fang Liu ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

The electrical properties of Pr2O3-doped bismuth titanate,Bi4-xPrxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all ceramics. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.75 were above 18μC/cm2 and 65KV/cm , respectively.

Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in C12/Ar and BCl3/Cl2/Ar Chemistries

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Medelci ◽  
A. Tempez ◽  
E. Kim ◽  
N. Badi ◽  
D. Starikov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Surface Composition ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Etch Rates

ABSTRACTBoron nitride (BN) and gallium nitride (GaN) are known as superior semiconductor materials for high power and high temperature applications. Undoped BN layers grown using ion beam and electron cyclotron resonance (ECR) assisted physical deposition on conductive GaN films have demonstrated good insulating properties. These films are thus good candidates as thin insulating layers in high temperature GaN-based device structures such as MIS diodes and MISFETs due to their close thermal expansion coefficient. In order to address the device processing issue, reactive ion etching (RIE) tests were performed on these films. Using Cl2/Ar chemistry, etch rates up to 600 Å/min were measured. These rates were found to increase linearly with increasing rf power and Cl2 flow rate. GaN layers grown by gas source MBE were also dry etched, resulting in smooth sidewalls. Etch rates up to 1,400 Å/min were achieved at 200 W rf power (-280 V d.c. bias) in a BCl3/Cl2/Ar chemistry; this is the highest RIE rate reported up to now for GaN. Using Cl2/Ar and BCl3/Cl2/Ar for BN and GaN respectively, etch selectivities in excess of 5:1 can be obtained. Finally, preliminary Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results on residue deposition and surface composition changes as a function of the different etch conditions are presented.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

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