Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate, and Thin-Film Barium Strontium Titanate

1999 ◽  
Vol 603 ◽  
Author(s):  
A.T. Findikoglu ◽  
Q.X. Jia ◽  
C. Kwon ◽  
B.J. Gibbons ◽  
K.Ø. Rasmussen ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Coplanar Waveguide ◽  
Low Frequency ◽  
Dissipation Factor ◽  
Barium Strontium ◽  
Dc Bias

AbstractWe have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate (STO), and thin-film barium strontium titanate (BSTO). We have implemented low-frequency capacitance (100 Hz - 1 MHz), swept-frequency transmittance (45 MHz - 4 GHz), and time-domain transmittance (dc - several GHz) measurements to determine effective refractive index (or, dielectric constant), and dissipation factor (or, loss tangent) as a function of dc bias (up to 4×106 V/m) and temperature (20 - 300 K). The STO samples used superconducting electrodes and were designed to operate at cryogenic temperatures, whereas BSTO samples used normal conducting electrodes and exhibited optimal performance around room temperature. By using nearly identical electrode geometries for all devices, we were able to conduct a direct comparative study among them, and investigate not only single-crystal vs thin-film, but also cryogenic vs room-temperature applications.

Preparation of Barium Strontium Titanate Thin Film by Spray Deposition

2002 ◽  
Vol 45 (1) ◽  
pp. 3-12
Author(s):  
Y. Takeshima ◽  
K. Nishita ◽  
K. Tanaka ◽  
Y. Sakabe
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Spray Deposition ◽  
Barium Strontium ◽  
Titanate Thin Film

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decomposition

1994 ◽  
Vol 76 (4) ◽  
pp. 2541-2543 ◽  
Author(s):  
Antonio B. Catalan ◽  
Joseph V. Mantese ◽  
Adolph L. Micheli ◽  
Norman W. Schubring ◽  
Roger J. Poisson
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Barium Strontium ◽  
Thin Film Capacitors ◽  
Titanate Thin Film

Microstructure Analysis of Barium Strontium Titanate Thin Film

1998 ◽  
Vol 523 ◽  
Author(s):  
Wei Chen ◽  
Joe Hooker ◽  
Kathy Monarch ◽  
Peter Fejes ◽  
Peir Chu
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Sample Preparation ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Accurate Method ◽  
Tem Analysis ◽  
Barium Strontium

AbstractMicrostructures of Barium Strontium Titanate (Ba, Sr)TiO3 [BST] thin film play an important role in determining the electrical properties of BST. In particular, it is found that the grain size distribution as a function of deposition conditions correlates with the dielectric constant of BST film. Traditionally, Transmission Electron Microscopy (TEM) provides an accurate method for determining microstructures such as interface structure between BST and electrodes and BST grain size distribution. However, TEM analysis relies heavily upon successful sample preparation, and film adhesion for BST proves to be a difficult problem to overcome for successful sample preparation. With the state of the art Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), useful information can be obtained for BST and electrode microstructures requiring little or no sample preparation. A good correlation among TEM, SEM and AFM techniques is achieved which allows useful information of BST grain size distribution to he obtained via SEM and AFM analyses. Power spectral density (PSD) analysis of contrast enhanced AFM images proves to be an efficient method for estimating BST grain size distribution.

Flexoelectric Materials and Structures for M/NEMS

2011 ◽  
Author(s):  
Wenbin Huang ◽  
Kyungrim Kim ◽  
Shujun Zhang ◽  
Fuh-Gwo Yuan ◽  
Xiaoning Jiang
Keyword(s):  
Strontium Titanate ◽  
Scale Effect ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Piezoelectric Properties ◽  
Research Progress ◽  
Electromechanical Systems ◽  
Barium Strontium ◽  
Recent Research Progress

Recent research progress on flexoelectricity suggests that dramatic enhancement of effective piezoelectric properties desirable for advanced M/NEMS, in principle, is attainable through flexoelectric (FE) effect and scale effect. In this paper, the transverse flexoelectric coefficient μ12 of barium strontium titanate (BST) microcantilevers with thicknesses ranging from 1.4 mm down to 30 μm was measured at room temperature. It was found that μ12 remains to be constant (8.5 μC/m) for all fabricated microcantilevers. Effective piezoelectric coefficients of these microcantilevers were also calculated, indicating that significantly increased effective piezoelectric coefficients can be obtained from microcantilevers with thickness of microns and nanometers, which is promising for micro/nano electromechanical systems (M/NEMS).

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